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Jang-Hee
Jang Hee Kang, Daejeon KR
| Patent application number | Description | Published |
|---|---|---|
| 20100135198 | APPARATUS FOR MOBILE SATELLITE COMMUNICATIONS AND METHOD OF CONTROLLING COMMUNICATIONS ROUTE - A mobile satellite transmission/reception apparatus and a communications route control method using the same are disclosed. The mobile satellite transmission/reception apparatus comprises: a first antenna unit configured to receive a signal along a first communications route; a second antenna unit configured to receive a signal along a second communications route; and a data processor configured to compare cyclic redundancy check (CRC) values with respect to packet streams of signals respectively received by the first and second antenna units, and change communications route to one of the first and second communications routes if packets having the same CRC value are detected. | 06-03-2010 |
Jang Hee Kim, Daejeon KR
| Patent application number | Description | Published |
|---|---|---|
| 20090213119 | Remeshing method and apparatus for restoring sharp features of mesh made smooth enough - A three-dimensional (3D) remeshing apparatus includes a curved surface geometry module for calculating one or more geometric elements, including a normal and a curvature, based on data of an input mesh, a vertex grouping module for grouping vertices of the mesh into a general group, an edge group, and an apex group using information of the curvature calculated by the curved surface geometry module, and a projection module for searching for one or more tangent planes corresponding to one or more of the vertices grouped by the vertex grouping module, projecting one or more corresponding vertices on each of the tangent planes, and restoring one or more edges of the input mesh. | 08-27-2009 |
Jang Hee Kim, Gyeongsangnam-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20100132620 | AIR INFLATING AND DEFLATING FLOAT FOR MARINE CULTIVATION, MANUFACTURING METHOD THEREOF, AND VALVE USED THEREIN - Disclosed are an air inflating and deflating float for marine cultivation and a manufacturing method thereof. The air inflating and deflating float for marine cultivation includes a soft float body provided with a valve fixing part with an insertion hole, formed at the center thereof and connected to the inside of the float body, formed at one side of the float body; a valve inserted into the insertion hole of the valve fixing part, and provided with a through hole, through which air comes in and out, formed therein; and a protection cap inserted into the valve fixing part to prevent the air from being discharged via the through hole of the valve, and closing the through hole of the valve. | 06-03-2010 |
Jang Hee Park, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20110300582 | Corynebacteria Strain Having Enhanced 5'-Xanthosine Monophosphate Productivity and a Method of Producing 5'-Xanthosine Monophosphate Using the Same - Disclosed is a novel microorganism which has a malate dehydrogenase activity higher than that of a wild-type. Also, a recombinant vector which has the structure shown in the cleavage map of FIG. | 12-08-2011 |
Jang-Hee Lee, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20090256177 | Semiconductor device including an ohmic layer - In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide that includes tungsten and silicon with an atomic ratio within a range of about 1:5 to about 1:15. The tungsten silicide may be obtained in a chamber using a reaction gas including a tungsten source gas and a silicon source gas by a partial pressure ratio within a range of about 1.0:25.0 to about 1.0:160.0. The reaction gas may have a partial pressure within a range of about 2.05 percent to about 30.0 percent of a total internal pressure of the chamber. When the ohmic layer is employed for a conductive structure, such as a gate structure or a metal wiring, the conductive structure may have a reduced resistance. | 10-15-2009 |
Jang-Hee Lee, Yongin-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20080200031 | Method of fabricating gate electrode having polysilicon film and wiring metal film - A method of forming a gate electrode of a semiconductor device according to example embodiments that may include forming a polysilicon film on a semiconductor substrate. An interface control layer may be formed on the polysilicon film by repeating a unit cycle a plurality of times. The unit cycle may include forming an interface metal film and nitriding an upper surface portion of the interface metal film to form an interface metal nitride film on an upper surface portion of the interface metal film. A wiring metal film may be formed on the interface control layer. | 08-21-2008 |
| 20090026618 | Semiconductor device including interlayer interconnecting structures and methods of forming the same - In a method of forming a semiconductor device, and a semiconductor device formed according to the method, an insulating layer is provided on an underlying contact region of the semiconductor device. An opening is formed in the insulating layer to expose the underlying contact region. A seed layer is provided on sidewalls and a bottom of the opening, the seed layer comprising cobalt. A barrier layer of conductive material is provided in a lower portion of the opening, the seed layer being exposed on sidewalls of an upper portion of the opening. A metal layer is provided on the barrier layer in the opening to form an interlayer contact, the metal layer contacting the seed layer at the sidewalls of the upper portion of the opening. | 01-29-2009 |
| 20100240184 | METHOD OF FORMING BURIED GATE ELECTRODE - A method of forming a buried gate electrode prevents voids from being formed in a silicide layer of the gate electrode. The method begins by forming a trench in a semiconductor substrate, forming a conformal gate oxide layer on the semiconductor in which the trench has been formed, forming a first gate electrode layer on the gate oxide layer, forming a silicon layer on the first gate electrode layer to fill the trench. Then, a portion of the first gate electrode layer is removed to form a recess which exposed a portion of a lateral surface of the silicon layer. A metal layer is then formed on the semiconductor substrate including on the silicon layer. Next, the semiconductor substrate is annealed while the lateral surface of the silicon layer is exposed to form a metal silicide layer on the silicon layer. | 09-23-2010 |
| 20100240185 | Semiconductor device and method of manufacturing the same - A method of manufacturing a semiconductor device includes: forming a trench for forming buried type wires by etching a substrate; forming first and second oxidation layers on a bottom of the trench and a wall of the trench, respectively; removing a part of the first oxidation layer and the entire second oxidation layer; and forming the buried type wires on the wall of the trench by performing a silicide process on the wall of the trench from which the second oxidation layer is removed. As a result, the buried type wires are insulated from each other. | 09-23-2010 |
Jang-Hee Lee, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20090191699 | METHODS FOR FORMING SILICIDE CONDUCTORS USING SUBSTRATE MASKING - A plurality of spaced-apart conductor structures is formed on a semiconductor substrate, each of the conductor structures including a conductive layer. Insulating spacers are formed on sidewalls of the conductor structures. An interlayer-insulating film that fills gaps between adjacent ones of the insulating spacers is formed. Portions of the interlayer-insulating layer are removed to expose upper surfaces of the conductive layers. Respective epilayers are grown on the respective exposed upper surfaces of the conductive layers and respective metal silicide layers are formed from the respective epilayers. | 07-30-2009 |
Jang-Hee Yoo, Daejeon-City KR
| Patent application number | Description | Published |
|---|---|---|
| 20090097717 | Method and Apparatus for User Authentication Using Face Image - A user authentication method and apparatus using a face image are provided. The method includes transforming a face image in a normalized spatial domain into frequency-domain data, extracting valid transform coefficients from the frequency-domain data based on energy-concentrated region information, extracting a feature vector from the extracted valid transform coefficients, and performing user authentication by comparing the extracted feature vector with a previously registered feature vector. Accordingly, it is possible to perform user authentication using a face image while using a minimum data dimension, thereby improving the speed and precision thereof. | 04-16-2009 |
Jang-Hee Yoon, Busan-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100282606 | Electrochemical Measurement System For The Trace Heavy Metals In Organic Waste Water - Disclosed herein is an electrochemical measurement system for analyzing heavy metals in organic compound-containing samples, comprising: a lower plate; a flow channel plate; an upper plate; an organic compound-decomposing electrode and a heavy metal analysis electrode; and a flow changeover portion. The disclosed system can continuously perform a pretreatment process for organic compound decomposition and a process for heavy metal analysis, thus making it possible to achieve the selective analysis and separation of heavy metals in wastewater. Also, it can substitute for expensive spectrophotometric analysis equipment and makes it possible to monitor trace heavy metals on-line in situ. In addition, it may include a small-sized battery as a power source, such that it is easy to carry and use. | 11-11-2010 |
Jang-Hee Yoon, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110085826 | IMAGE FORMING APPARATUS - An image forming apparatus includes a plurality of optical scanning units to scan light modulated according to an image signal, a plurality of photoconductive drums to form a plurality of electrostatic latent images by the light scanned from the plurality of optical scanning units, a plurality of developing units to develop the plurality of electrostatic latent images formed on the plurality of photoconductive drums into a plurality of toner images, an intermediate transfer unit to transfer the plurality of toner images developed by the plurality of developing units, a plurality of first transfer rollers installed in the intermediate transfer unit to correspond to the plurality of photoconductive drums, respectively, and to apply transfer voltages that is used to transfer the plurality of toner images onto the intermediate transfer unit, a second transfer roller to transfer the plurality of toner images formed on the intermediate transfer unit onto a paper, and a fixing unit to fix the plurality of toner images transferred onto the paper, wherein the plurality of first transfer rollers includes the first transfer rollers of a first group in which distances between the first transfer rollers of the first group and the plurality of photoconductive drums, respectively, are sequentially reduced downstream along a direction that the intermediate transfer unit travels, and the first transfer roller of a second group is independent from the distances between the first transfer rollers of the first group and the plurality of photoconductive drums. | 04-14-2011 |