| Patent application number | Description | Published |
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| 20080283911 | High-voltage semiconductor device and method for manufacturing the same - A high-voltage semiconductor device and a method for manufacturing the same are disclosed. The disclosed high-voltage semiconductor device includes a semiconductor substrate, a first N type well in the semiconductor substrate, a first P type well in the first N type well, second N type wells in the first N type well along a periphery of the first P type well, a gate insulating film and a gate electrode on the first P type well, and first heavily-doped N type impurity regions in the first P type well at opposite sides of the gate electrode. | 11-20-2008 |
| 20080283915 | HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a high voltage semiconductor device and a method of manufacturing the same. The high voltage semiconductor device includes: a semiconductor substrate; a first high voltage N-type well formed on the semiconductor substrate; a first high voltage P-type well formed inside the first high voltage N-type well; a second high voltage N-type well formed to surround the first high voltage P-type well inside the first high voltage N-type well; a gate dielectric layer and a gate electrode formed to be stacked on the upper of the first high voltage P-type well; and a first N-type high-concentration impurity region formed at both sides of the gate electrode in the first high voltage P-type well, wherein the concentration of the upper region of the first high voltage N-type well is lower than that of the lower region thereof, based on a portion formed with the first high voltage P-type well. Therefore, the present invention can apply bulk bias, simplify a process, improve punch through breakdown voltage in the P-type well formed inside a low-concentration deep N-type well, reduce field of a high-concentration N-type impurity region, and reduce resistance. | 11-20-2008 |
| 20090001485 | Semiconductor Device and Manufacturing Method Thereof - Disclosed is a semiconductor device that can be used as a high voltage transistor. The semiconductor device can include a gate electrode on a semiconductor substrate, drift regions in the substrate at opposite sides of the gate electrode, a source region in one of the drift regions and a drain region in the other of the drift regions, and a shallow trench isolation (STI) region in a portion of the drift region between the gate electrode and the drain region. The portion of the drift region below the STI region can have a doping profile in which the concentration of impurities decreases from the concentration at the lower surface of the STI region, and then increases, and then again decreases. | 01-01-2009 |
| 20090057779 | Semiconductor Device and Method of Fabricating the Same - A semiconductor device and a method of fabricating the same are disclosed. The semiconductor device includes a semiconductor substrate having a first area implanted with first conductive type impurities; an isolating film defining a first active area and a second active area in the first area; first LDD areas spaced from each other on the first active area at a first interval and implanted with second conductive type impurities; and second LDD areas spaced from each other on the second active area at a second interval narrower than the first interval and implanted with the second conductive type impurities. | 03-05-2009 |
| 20090291539 | METHOD FOR MANUFACTURING AND LCD DRIVER IC - A method of manufacturing an LCD driver chip includes forming a heavily doped P-type well and a heavily doped N-type well over a high voltage region of a substrate; and then forming an oxide layer over the heavily doped P-type well and the heavily doped N-type; and then simultaneously forming a first gate electrode over the heavily doped P-type well and a second gate electrode over the heavily doped N-type well including the oxide layer; and then patterning the oxide layer to form a gate insulating layer under the first and second gate electrodes and an oxide layer portion connected to lateral sides of the gate insulating layers; and then forming an insulating layer over the entire surface of the substrate including the first and second gate electrodes and the oxide layer portion; and then forming spacers on sidewalls of the first and second gate electrodes and then removing the oxide layer portion after forming the spacers; and then forming ion implantations regions over the heavily doped P-type well and the heavily doped N-type well. | 11-26-2009 |
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| 20090094498 | APPARATUS AND METHOD FOR TRANSMITTING AND RECEIVING AUTOMATIC RETRANSMISSION REQUEST FEEDBACK INFORMATION ELEMENT IN A COMMUNICATION SYSTEM - An Automatic Retransmission reQuest (ARQ) data block reception apparatus and method in a communication system is provided. In the ARQ method, an ARQ feedback Information Element (IE) is transmitted to an ARQ data block transmission apparatus. The ARQ feedback IE includes a first field for indicating a Connection IDentifier (CID) of an ARQ connection, a second field for indicating the presence/absence of an additional ARQ feedback IE after the ARQ feedback IE, a third field for indicating a type of an Acknowledgement (ACK) MAP included in the ARQ feedback IE, a fourth field for indicating a Block Sequence Number (BSN) of an ARQ data block, and m ACK MAP fields. The m ACK MAP fields each include information indicating presence/absence of an additional ACK MAP field after a corresponding ACK MAP field, and an ACK MAP indicating success/failure in normal reception for each of n ARQ data blocks, wherein m and n each denote an integer greater than or equal to 1. | 04-09-2009 |
| 20090233606 | Method and system for delivering and constructing status information in communication system - Disclosed is a method for delivering buffer status information to a target base station, to which a mobile station has decided to hand over, by a serving base station in a communication system. The method includes the steps of constructing buffer status information containing a first parameter indicating the number of a smallest packet among packets within a predetermined section stored in a buffer, a second parameter indicating the number of a packet to be transmitted at a next point of time, a third parameter indicating the number of a first packet, the lifetime of which has not yet expired, and a fourth parameter indicating whether or not an instruction to initialize the buffer status information has been transmitted to the mobile station; and transmitting a message containing the constructed buffer status information to the target base station. | 09-17-2009 |
| 20100135227 | Method for resuming services in a wireless communication system - A method for operating a Base Station (BS) in a wireless communication system includes, when a bandwidth request message is received from a Mobile Station (MS), whether a resource allocated to the MS exists is determined. When the resource allocated to the MS does not exist, a resource is temporarily allocated to the MS. A message indicating a network initial entry is transmitted to the MS using the temporarily allocated resource. | 06-03-2010 |
