Patent application number | Description | Published |
20090309110 | SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE FOR MULTI-COLORED DEVICES - A multicolored LED device made of a semipolar material having different indium containing regions provided on different spatial features of GaN material. Other materials such as non-polar materials can also be used. | 12-17-2009 |
20090309127 | SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE - A gallium containing crystalline material. The material comprises a bulk semi-polar gallium indium containing crystalline material having a thickness of about 20 nanometers to about 1000 nanometers. The material includes a spatial width dimension of no greater than about 10 microns characterizing the thickness of the bulk semi-polar gallium indium containing crystalline material. The material includes a photoluminescent characteristic of the crystalline material having a first wavelength, which is at least five nanometers greater than a second wavelength, which is derived from an indium gallium containing crystalline material grown on a growth region of greater than about 15 microns. | 12-17-2009 |
20100001300 | COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs - A packaged light emitting device. The device has a substrate member comprising a surface region. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region according to a specific embodiment. At least a first of the light emitting diode device is fabricated on a semipolar GaN containing substrate and at least a second of the light emitting diode devices is fabricated on a nonpolar GaN containing substrate. In a preferred embodiment, the two or more light emitting diode devices emits substantially polarized emission. Of course, there can be other variations, modifications, and alternatives. | 01-07-2010 |
20100006873 | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN - A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission. | 01-14-2010 |
20100025656 | WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND PHOSPHORS - A packaged light emitting device. The device includes a substrate member comprising a surface region and one or more light emitting diode devices overlying the surface region. In a specific embodiment, at least one of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The one or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission of one or more first wavelengths. At least at least one of the light emitting diode devices comprise a quantum well region, which is characterized by an electron wave function and a hole wave function. In a specific embodiment, the electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. In a specific embodiment, the device has a thickness of one or more entities formed overlying the one or more light emitting diode devices. The one or more entities are excited by the substantially polarized emission and emitting electromagnetic radiation of one or more second wavelengths. | 02-04-2010 |
20100302464 | Laser Based Display Method and System - The present invention is directed to display technologies. More specifically, various embodiments of the present invention provide projection display systems where one or more laser diodes are used as light source for illustrating images. In one set of embodiments, the present invention provides projector systems that utilize blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides projection systems having digital lighting processing engines illuminated by blue and/or green laser devices. In one embodiment, the present invention provides a 3D display system. There are other embodiments as well. | 12-02-2010 |
20100316075 | Optical Device Structure Using GaN Substrates for Laser Applications - An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region. | 12-16-2010 |
20110064100 | Growth Structures and Method for Forming Laser Diodes on or Off Cut Gallium and Nitrogen Containing Substrates - An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate. | 03-17-2011 |
20110064101 | Low Voltage Laser Diodes on Gallium and Nitrogen Containing Substrates - A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions. | 03-17-2011 |
20110064102 | Growth Structures and Method for Forming Laser Diodes on or Off Cut Gallium and Nitrogen Containing Substrates - An optical device having a structured active region configured for one or more selected wavelengths of light emissions and formed on an off-cut m-plane gallium and nitrogen containing substrate. | 03-17-2011 |
20110180781 | Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN - A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission. | 07-28-2011 |
20110247556 | Tapered Horizontal Growth Chamber - A system and techniques for performing deposition having a tapered horizontal growth chamber which includes a susceptor and a tapered channel flow block. A tapered chamber is formed between the susceptor and the tapered channel flow block. Gaseous species introduced are forced by the tapered channel block to flow toward the susceptor to enhance the efficiency of reactions between the gases species and a wafer on the susceptor. | 10-13-2011 |
20110279054 | Power Light Emitting Diode and Method with Current Density Operation - A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm | 11-17-2011 |
20120104359 | Method of Fabricating Optical Devices Using Laser Treatment of Contact Regions of Gallium and Nitrogen Containing Material - A method for forming optical devices includes providing a gallium nitride substrate having a crystalline surface region and a backside region. The backside is subjected to a laser scribing process to form scribe regions. Metal contacts overly the scribe regions. | 05-03-2012 |
20120178198 | Self-Aligned Multi-Dielectric-Layer Lift Off Process for Laser Diode Stripes - A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region. | 07-12-2012 |
20130016750 | Surface Morphology of Non-Polar Gallium Nitride Containing Substrates - Optical devices such as LEDs and lasers are discloses. The devices include a non-polar gallium nitride substrate member having an off-axis non-polar oriented crystalline surface plane. The off-axis non-polar oriented crystalline surface plane can be up to about −0.6 degrees in a c-plane direction and up to about −20 degrees in a c-plane direction in certain embodiments. In certain embodiments, a gallium nitride containing epitaxial layer is formed overlying the off-axis non-polar oriented crystalline surface plane. In certain embodiments, devices include a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks. | 01-17-2013 |
20130234111 | Method of Fabricating Optical Devices Using Laser Treatment - A method for forming optical devices. The method includes providing a gallium nitride substrate member having a crystalline surface region and a backside region. The method also includes subjecting the backside region to a laser scribing process to form a plurality of scribe regions on the backside region and forming a metallization material overlying the backside region including the plurality of scribe regions. The method removes at least one optical device using at least one of the scribe regions. | 09-12-2013 |
20140021883 | POWER LIGHT EMITTING DIODE AND METHOD WITH CURRENT DENSITY OPERATION - A light emitting diode device emitting at a wavelength of 390-415 nm has a bulk gallium and nitrogen containing substrate with an active region. The device has a current density of greater than about 175 Amps/cm | 01-23-2014 |
20140213001 | WHITE LIGHT DEVICES USING NON-POLAR OR SEMIPOLAR GALLIUM CONTAINING MATERIALS AND PHOSPHORS - A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The light emitting diodes emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength. | 07-31-2014 |
20140253697 | LASER BASED DISPLAY METHOD AND SYSTEM - The present invention is directed to display technologies. More specifically, various embodiments of the present invention provide projection display systems where one or more laser diodes are used as light source for illustrating images. In one set of embodiments, the present invention provides projector systems that utilize blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides projection systems having digital lighting processing engines illuminated by blue and/or green laser devices. In one embodiment, the present invention provides a 3D display system. There are other embodiments as well. | 09-11-2014 |
20140267937 | LASER BASED DISPLAY METHOD AND SYSTEM - The present invention is directed to display technologies. More specifically, various embodiments of the present invention provide projection display systems where one or more laser diodes are used as light source for illustrating images. In one set of embodiments, the present invention provides projector systems that utilize blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides projection systems having digital lighting processing engines illuminated by blue and/or green laser devices. In one embodiment, the present invention provides a 3D display system. There are other embodiments as well. | 09-18-2014 |
20140293139 | LASER BASED DISPLAY METHOD AND SYSTEM - The present invention is directed to display technologies. More specifically, various embodiments of the present invention provide projection display systems where one or more laser diodes are used as light source for illustrating images. In one set of embodiments, the present invention provides projector systems that utilize blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides projection systems having digital lighting processing engines illuminated by blue and/or green laser devices. In one embodiment, the present invention provides a 3D display system. There are other embodiments as well. | 10-02-2014 |
20140295595 | OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS - An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region. | 10-02-2014 |
20140315340 | LASER DIODES WITH SCRIBE STRUCTURES - A method and device for emitting electromagnetic radiation using semipolar or nonpolar gallium containing substrates is described where the backside of the substrate includes multiple scribes that reduce stray light leaking. | 10-23-2014 |