| Patent application number | Description | Published |
|---|
| 20090025879 | PLASMA REACTOR WITH REDUCED ELECTRICAL SKEW USING A CONDUCTIVE BAFFLE - RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing a bypass current flow path. The bypass current flow path avoids the pumping port in the chamber floor and avoids the wafer slit valve, and is provided by a conductive annular baffle grounded to and extending from the wafer pedestal. Current flow below the level of the annular baffle can be blocked by providing one or more insulating rings in the sidewall or by providing a dielectric sidewall. | 01-29-2009 |
| 20100013572 | APPARATUS FOR MULTIPLE FREQUENCY POWER APPLICATION - Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector. | 01-21-2010 |
| 20100096109 | METHODS AND APPARATUS FOR RAPIDLY RESPONSIVE HEAT CONTROL IN PLASMA PROCESSING DEVICES - Methods and apparatus for regulating the temperature of a component in a plasma-enhanced process chamber are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber and an RF source to provide RF energy to form a plasma in the process chamber. A component is disposed in the process chamber so as to be heated by the plasma when formed. A heater is configured to heat the component and a heat exchanger is configured to remove heat from the component. A chiller is coupled to the heat exchanger via a first flow conduit having an on/off flow control valve disposed therein and a bypass loop to bypass the flow control valve, wherein the bypass loop has a flow ratio valve disposed therein. | 04-22-2010 |
| 20110162798 | METHODS AND APPARATUS FOR TUNING MATCHING NETWORKS - Methods and apparatus for tuning matching networks are provided herein. A method of tuning a matching network includes providing a matching network coupling an RF source to a load, the matching network having a tunable element disposed at a first set point; increasing a value of the tunable element by a first step above the first set point; sensing a first adjusted value of a reflected RF power; decreasing the value of the tunable element by the first step below the first set point; sensing a second adjusted value of the reflected RF power; comparing the first and the second adjusted values of the reflected RF power; and moving the tunable element to a second set point that corresponds to a position having a lowest adjusted value of the reflected RF power. The method may be repeated until the reflected RF power falls within an acceptable reflected RF power range. | 07-07-2011 |
| 20110265549 | METHODS AND APPARATUS FOR CALIBRATING FLOW CONTROLLERS IN SUBSTRATE PROCESSING SYSTEMS - Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier. | 11-03-2011 |
| 20110265814 | METHODS FOR PROCESSING SUBSTRATES IN PROCESS SYSTEMS HAVING SHARED RESOURCES - Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached. | 11-03-2011 |
| 20110265824 | METHODS FOR EXTENDING THE LIFETIME OF PRESSURE GAUGES COUPLED TO SUBSTRATE PROCESS CHAMBERS - Methods of extending the lifetime of pressure gauges coupled to process chambers are disclosed herein. In some embodiments, the methods may include isolating the pressure gauge from a processing volume of the process chamber, increasing a moisture content of the processing volume to above a desired moisture level while the pressure gauge is isolated from the processing volume of the process chamber, reducing a moisture content of the processing volume to a desired moisture level, wherein the processing volume has a leak rate of about 2 mTorr/min or less at the desired moisture level, and exposing the pressure gauge to the processing volume after reaching the desired moisture level. In some embodiments, the moisture content of the process chamber may be increased by performing a cleaning process in the process chamber or by allowing air to enter the processing volume. | 11-03-2011 |
| 20110265831 | METHODS AND APPARATUS FOR PROVIDING A GAS MIXTURE TO A PAIR OF PROCESS CHAMBERS - A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line. | 11-03-2011 |
| 20110265883 | METHODS AND APPARATUS FOR REDUCING FLOW SPLITTING ERRORS USING ORIFICE RATIO CONDUCTANCE CONTROL - Methods and apparatus for gas delivery to a process chamber are provided herein. In some embodiments, an apparatus for processing substrates may include a mass flow controller to provide a desired total fluid flow; a first flow control manifold comprising a first inlet, a first outlet, and a first plurality of orifices selectably coupled therebetween, wherein the first inlet is coupled to the mass flow controller; and a second flow control manifold comprising a second inlet, a second outlet, and a second plurality of orifices selectably coupled therebetween, wherein the second inlet is coupled to the mass flow controller; wherein a desired flow ratio between the first outlet and the second outlet is selectably obtainable when causing the fluid to flow through one or more of the first plurality of orifices of the first manifold and one or more of the second plurality of orifices of the second manifold. | 11-03-2011 |
| 20110265887 | APPARATUS FOR RADIAL DELIVERY OF GAS TO A CHAMBER AND METHODS OF USE THEREOF - Apparatus for the delivery of a gas to a chamber and methods of use thereof are provided herein. In some embodiments, a gas distribution system for a process chamber may include a body having a first surface configured to couple the body to an interior surface of a process chamber, the body having a opening disposed through the body; a flange disposed proximate a first end of the opening opposite the first surface of the body, the flange extending inwardly into the opening and configured to support a window thereon; and a plurality of gas distribution channels disposed within the body and fluidly coupling a channel disposed within the body and around the opening to a plurality of holes disposed in the flange, wherein the plurality of holes are disposed radially about the flange. | 11-03-2011 |
| 20110265899 | SYSTEM AND METHOD FOR CALIBRATING PRESSURE GAUGES IN A SUBSTRATE PROCESSING SYSTEM - Systems and methods for calibrating pressure gauges in one or more process chambers coupled to a transfer chamber having a transfer volume is disclosed herein. The method includes providing a first pressure in the transfer volume and in a first inner volume of a first process chamber coupled to the transfer chamber, wherein the transfer volume and the first inner volume are fluidly coupled, injecting a calibration gas into the transfer volume to raise a pressure in the transfer volume and in the first inner volume to a second pressure, measuring the second pressure using each of a reference pressure gauge coupled to the transfer chamber and a first pressure gauge coupled to the first process chamber while the transfer volume and the first inner volume are fluidly coupled, and calibrating the first pressure gauge based on a difference in the measured second pressure between the reference pressure gauge and the first pressure gauge. | 11-03-2011 |
| 20110265951 | TWIN CHAMBER PROCESSING SYSTEM - Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber and a second process chamber having independent processing volumes and a plurality of shared resources between the first and second process chambers. In some embodiments, the shared resources include at least one of a shared vacuum pump, a shared gas panel, or a shared heat transfer source. | 11-03-2011 |
| 20110266256 | METHODS FOR PROCESSING SUBSTRATES IN PROCESS SYSTEMS HAVING SHARED RESOURCES - Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include providing a substrate to the first process chamber of the twin chamber processing system, wherein the first process chamber has a first processing volume that is independent from a second processing volume of the second process chamber; providing one or more processing resources from the shared processing resources to only the first processing volume of the first process chamber; and performing a process on the substrate in the first process chamber. | 11-03-2011 |
| 20110269314 | PROCESS CHAMBERS HAVING SHARED RESOURCES AND METHODS OF USE THEREOF - Process chambers having shared resources and methods of use are provided. In some embodiments, substrate processing systems may include a first process chamber having a first substrate support disposed within the first process chamber, wherein the first substrate support has a first heater and a first cooling plate to control a temperature of the first substrate support; a second process chamber having a second substrate support disposed within the second process chamber, wherein the second substrate support has a second heater and a second cooling plate to control a temperature of the second substrate support; and a shared heat transfer fluid source having an outlet to provide a heat transfer fluid to the first cooling plate and the second cooling plate and an inlet to receive the heat transfer fluid from the first cooling plate and the second cooling plate. | 11-03-2011 |
| 20110270574 | METHODS FOR MONITORING PROCESSING EQUIPMENT - Methods for monitoring processing equipment are provided herein. In some embodiments, a method for monitoring processing equipment when in an idle state for a period of idle time may include selecting a test from a list of a plurality of tests to perform on the processing equipment when the processing equipment is in the idle state, wherein the test has a total run time; starting the selected test; comparing a remaining idle time of the period of idle time to a remaining run time of the total run time as the selected test is performed; and determining whether to end the selected test prior to completing the total run time in response to the comparison. | 11-03-2011 |
