| Patent application number | Description | Published |
|---|
| 20090272435 | COMPOSITIONALLY-GRADED AND STRUCTURALLY-GRADED PHOTOVOLTAIC DEVICES AND METHODS OF FABRICATING SUCH DEVICES - A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described. | 11-05-2009 |
| 20090308454 | INSULATING COATING, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is an article comprising a metallic substrate; an insulating layer; the insulating layer being disposed on the metallic layer in an expanding thermal plasma; and a semiconductor layer; the semiconductor layer being disposed on the insulating layer. Disclosed herein too is a method comprising disposing an insulating layer on a metallic substrate; the insulating layer being in intimate contact with the metallic layer; wherein the insulating layer is derived from a metal-organic precursor, and wherein insulating layer is deposited in an expanding thermal plasma; and disposing a semiconductor layer on the insulating layer. | 12-17-2009 |
| 20100055826 | Methods of Fabrication of Solar Cells Using High Power Pulsed Magnetron Sputtering - A method of fabricating a solar cell is provided. The method includes depositing a transparent conductive contact layer on a surface of a substrate, where the transparent conductive contact layer is configured to act as a front electrode for the solar cell, depositing a window layer over the transparent conductive contact layer, depositing an absorber layer on the window layer, wherein the absorber layer and the window layer are oppositely doped and form a semiconductor junction, and where at least one of the window layer or the absorber layer is deposited by employing high power pulsed magnetron sputtering, and depositing an electrically conductive film on the semiconductor junction, wherein the electrically conductive film is configured to act as a back electrode layer for the solar cell. | 03-04-2010 |
| 20100080934 | METHODS OF MAKING MULTILAYERED, HYDROGEN-CONTAINING INTERMETALLIC STRUCTURES - Methods of making multilayered, hydrogen-containing intermetallic structures including at least two adjacent metal layers are disclosed. At least one of the metal layers contains hydrogen, which can be introduced into the metal by plasma hydrogenation. The intermetallic structures can have high hydrogen contents and micrometer-sized and nanometer-sized dimensions. | 04-01-2010 |
| 20100119728 | Methods of making multilayered, hydrogen-containing thermite structures - Methods of making multi-layered, hydrogen-containing thermite structures including at least one metal layer and at least one metal oxide layer adjacent to the metal layer are disclosed. At least one of the metal layers contains hydrogen, which can be introduced by plasma hydrogenation. The thermite structures can have high hydrogen contents and small dimensions, such as micrometer-sized and nanometer-sized dimensions. | 05-13-2010 |
| 20100236607 | MONOLITHICALLY INTEGRATED SOLAR MODULES AND METHODS OF MANUFACTURE - A monolithically integrated cadmium telluride (CdTe) photovoltaic (PV) module includes a first electrically conductive layer and an insulating layer. The first electrically conductive layer is disposed below the insulating layer. The PV module further includes a back contact metal layer and a CdTe absorber layer. The back contact metal layer is disposed between the insulating layer and the CdTe absorber layer. The PV module further includes a window layer and a second electrically conductive layer. The window layer is disposed between the CdTe absorber layer and the second electrically conductive layer. At least one first trench extends through the back contact metal layer, at least one second trench extends through the absorber and window layers, and at least one third trench extends through the second electrically conductive layer. A method for monolithically integrating CdTe PV cells is also provided. | 09-23-2010 |
| 20100243056 | LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM - A photovoltaic device is provided comprising an absorber layer, wherein the absorber layer comprises a plurality of grains separated by grain boundaries. At least one layer is disposed over the absorber layer. The absorber layer comprises grain boundaries that are substantially perpendicular to the at least one layer disposed over the absorber layer. The plurality of grains has a median grain diameter of less than 1 micrometer. Further, the grains are either p-type or n-type. The grain boundaries comprise an active dopant. The active dopant concentration in the grain boundaries is higher than the effective dopant concentration in the grains. The grains and grain boundaries may be of the same type or opposite type. Further, when the grain boundaries are n-type the bottom of the grain boundaries may be p-type. A method of making the absorber layer is also disclosed. | 09-30-2010 |
| 20110067753 | COMPOSITIONALLY-GRADED AND STRUCTURALLY-GRADED PHOTOVOLTAIC DEVICES AND METHODS OF FABRICATING SUCH DEVICES - A semiconductor structure is described, including a semiconductor substrate and a semiconductor layer disposed on the semiconductor substrate. The semiconductor layer is both compositionally graded and structurally graded. Specifically, the semiconductor layer is compositionally graded through its thickness from substantially intrinsic at the interface with the substrate to substantially doped at an opposite surface. Further, the semiconductor layer is structurally graded through its thickness from substantially crystalline at the interface with the substrate to substantially amorphous at the opposite surface. Related methods are also described. | 03-24-2011 |
| 20110100447 | LAYER FOR THIN FILM PHOTOVOLTAICS AND A SOLAR CELL MADE THEREFROM - A photovoltaic device is provided. The photovoltaic device comprises an absorber layer comprising a p-type semiconductor, wherein at least one layer is disposed over the absorber layer. The at least one layer is a semiconductor having a higher carrier density than the carrier density of the absorber layer. The at least one layer comprises silicon. The at least one layer comprises a p+-type semiconductor. The absorber layer is substantially free of silicon. A method of forming the photovoltaic device is provided. | 05-05-2011 |
| 20110104398 | METHOD AND SYSTEM FOR DEPOSITING MULTIPLE MATERIALS ON A SUBSTRATE - A system for depositing two or more materials on a substrate is provided. The system comprises one or more susceptors configured to define two or more recesses for accommodating at least a first material and a second material respectively. The first and second materials are different. The system further comprises one or more heaters for heating the first material and the second material for sublimation of the first and second materials for deposition on the substrate. A method for depositing two or more materials on a substrate is also presented. | 05-05-2011 |
