| Patent application number | Description | Published |
|---|
| 20090092530 | METHOD FOR TREATMENT OF A GAS STREAM CONTAINING SILICON TETRAFLUORIDE AND HYDROGEN CHLORIDE - The present invention is directed to a method for treatment of a gas stream comprising silicon tetrafluoride and hydrogen chloride. For example, the present invention is directed to a method for treatment of such a gas stream that involves contacting the gas stream with a metal that reacts with the hydrogen chloride to provide a treated gas stream having reduced hydrogen chloride content. The present invention is further directed to methods for subjecting silicon tetrafluoride and hydrogen chloride-containing gas streams to elevated pressure to provide gas streams suitable for transport. | 04-09-2009 |
| 20090092534 | PROCESSES FOR PURIFICATION OF SILICON TETRAFLUORIDE - Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts. | 04-09-2009 |
| 20090324479 | FLUIDIZED BED REACTOR SYSTEMS AND METHODS FOR REDUCING THE DEPOSITION OF SILICON ON REACTOR WALLS - Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall. | 12-31-2009 |
| 20090324819 | METHODS FOR INCREASING POLYCRYSTALLINE SILICON REACTOR PRODUCTIVITY BY RECYCLE OF SILICON FINES - Processes for producing polycrystalline silicon include contacting silicon particles with a thermally decomposable silicon compound in a reaction chamber. A portion of the silicon decomposable compound decomposes to produce silicon dust which is discharged from and reintroduced into the reaction chamber. The discharged silicon dust agglomerates with the silicon particles. | 12-31-2009 |
| 20100009843 | PROCESSES FOR PREPARING A CATALYST - Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts. | 01-14-2010 |
| 20100009844 | CATALYSTS USEFUL IN THE PURIFICATION OF SILICON TETRAFLUORIDE - Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts. | 01-14-2010 |
| 20100178225 | METHOD FOR TREATMENT OF A GAS STREAM CONTAINING SILICON TETRAFLUORIDE AND HYDROGEN CHLORIDE - The present invention is directed to a method for treatment of a gas stream comprising silicon tetrafluoride and hydrogen chloride. For example, the present invention is directed to a method for treatment of such a gas stream that involves contacting the gas stream with a metal that reacts with the hydrogen chloride to provide a treated gas stream having reduced hydrogen chloride content. The present invention is further directed to methods for subjecting silicon tetrafluoride and hydrogen chloride-containing gas streams to elevated pressure to provide gas streams suitable for transport. | 07-15-2010 |
| 20110244124 | METHODS FOR PRODUCING POLYCRYSTALLINE SILICON THAT REDUCE THE DEPOSITION OF SILICON ON REACTOR WALLS - Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall. | 10-06-2011 |
