# Jaione

## Jaione Bengoechea Apezteguia, Aachen DE

Patent application number | Description | Published |
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20100118903 | SOLID STATE LASER DEVICE WITH REDUCED TEMPERATURE DEPENDENCE - The present invention relates to a solid state laser device with a solid state gain medium between two resonator end mirrors ( | 05-13-2010 |

20100230863 | SYSTEM FOR AND METHOD OF HEATING OBJECTS IN A PRODUCTION LINE - A system and method ( | 09-16-2010 |

20110126617 | LASER SENSOR BASED SYSTEM FOR STATUS DETECTION OF TIRES - A system is described which enables parameters of a tire ( | 06-02-2011 |

20120128023 | SWITCHABLE DUAL WAVELENGTH SOLID STATE LASER - The present invention relates to a switchable dual wavelength solid state laser with a solid state gain medium ( | 05-24-2012 |

## Jaione Bengoechea Apezteguia, Arraioz ES

Patent application number | Description | Published |
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20110134953 | WAVEGUIDE LASER - It is an object of the invention to provide a simple setup of a waveguide laser which allows to control the emission of specific laser wavelengths in a laser material having laser transitions of similar wavelengths. For this purpose a core ( | 06-09-2011 |

20110274126 | METHOD OF SWITCHING LASER EMISSION OF A SOLID STATE LASER BETWEEN DIFFERENT EMISSION WAVELENGTHS AND CORRESPONDING SOLID STATE LASER DEVICE - The present invention relates to a method of switching laser emission of a solid state laser between different emission wavelengths, said different emission wavelengths being based on different electronic transitions in a solid state laser medium ( | 11-10-2011 |

20120002189 | APPARATUS FOR DETERMINING A FLOW PROPERTY OF A FLUID - The invention relates to an apparatus ( | 01-05-2012 |

## Jaione Tirapu Azpiroz, Poughkeepsie, NY US

Patent application number | Description | Published |
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20090185740 | CALCULATING IMAGE INTENSITY OF MASK BY DECOMPOSING MANHATTAN POLYGON BASED ON PARALLEL EDGE - A method, system, computer program product and table lookup system for calculating image intensity for a mask used in integrated circuit processing are disclosed. A method may comprise: decomposing a Manhattan polygon of the mask into decomposed areas based on parallel edges of the Manhattan polygon along only one dimension; determining a convolution of each decomposed area based on a table lookup; determining a sum of coherent systems contribution of the Manhattan polygon based on the convolutions of the decomposed areas; and outputting the determined sum of coherent system contribution for analyzing the mask. | 07-23-2009 |

20100003605 | SYSTEM AND METHOD FOR PROJECTION LITHOGRAPHY WITH IMMERSED IMAGE-ALIGNED DIFFRACTIVE ELEMENT - A novel system and method and computer program product for exposing a photoresist film with patterns of finer resolution than can physically be projected onto the film in an ordinary image formed at the same wavelength. A hologram structure containing a set of resolvable spatial frequencies is first formed above the photoresist film. If necessary the photoresist is then sensitized. An illuminating wavefront containing a second set of resolvable spatial frequencies is projected through the hologram, forming a new set of transmitted spatial frequencies that expose the photoresist. The transmitted spatial frequencies include sum frequencies of higher frequency than is present in the hologram or illuminating wavefront, increasing the resolution of the exposing pattern. These high spatial frequency transmitted waves can be evanescent, or they can propagate at a steeper obliquity in a higher index medium than is possible in a projected image. A further method is described for designing lithographic masks to fabricate the hologram and to project the illuminating wavefront. In other embodiments, a simple personalization based on Talbot fringes and plasmonic interference is performed. | 01-07-2010 |

20100175042 | EFFICIENT ISOTROPIC MODELING APPROACH TO INCORPORATE ELECTROMAGNETIC EFFECTS INTO LITHOGRAPHIC PROCESS SIMULATIONS - The present invention relates to the modeling of lithographic processes for use in the design of photomasks for the manufacture of semiconductor integrated circuits, and particularly to the modeling of the complex effects due to interaction of the illuminating light with the mask topography. According to the invention, an isofield perturbation to a thin mask representation of the mask is provided by determining, for the components of the illumination, differences between the electric field on a feature edge having finite thickness and on the corresponding feature edge of a thin mask representation. An isofield perturbation is obtained from a weighted coherent combination of the differences for each illumination polarization. The electric field of a mask having topographic edges is represented by combining a thin mask representation with the isofield perturbation applied to each edge of the mask. | 07-08-2010 |

20110239169 | EMF CORRECTION MODEL CALIBRATION USING ASYMMETRY FACTOR DATA OBTAINED FROM AERIAL IMAGES OR A PATTERNED LAYER - A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask. | 09-29-2011 |

20120008134 | METHOD TO MATCH EXPOSURE TOOLS USING A PROGRAMMABLE ILLUMINATOR - Programmable illuminators in exposure tools are employed to increase the degree of freedom in tool matching. A tool matching methodology is provided that utilizes the fine adjustment of the individual source pixel intensity based on a linear programming (LP) problem subjected to user-specific constraints to minimize the difference of the lithographic wafer data between two tools. The lithographic data can be critical dimension differences from multiple targets and multiple process conditions. This LP problem can be modified to include a binary variable for matching sources using multi-scan exposure. The method can be applied to scenarios that the reference tool is a physical tool or a virtual ideal tool. In addition, this method can match different lithography systems, each including a tool and a mask. | 01-12-2012 |

20120077130 | METHOD FOR GENERATING A PLURALITY OF OPTIMIZED WAVEFRONTS FOR A MULTIPLE EXPOSURE LITHOGRAPHIC PROCESS - A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions. | 03-29-2012 |

20130071774 | SYSTEM AND METHOD FOR PROJECTION LITHOGRAPHY WITH IMMERSED IMAGE-ALIGNED DIFFRACTIVE ELEMENT - A novel system and method and computer program product for exposing a photoresist film with patterns of finer resolution than can physically be projected onto the film in an ordinary image formed at the same wavelength. A hologram structure containing a set of resolvable spatial frequencies is first formed above the photoresist film. An illuminating wavefront containing a second set of resolvable spatial frequencies is projected through the hologram, forming a new set of transmitted spatial frequencies that expose the photoresist. The transmitted spatial frequencies include sum frequencies of higher frequency than is present in the hologram or illuminating wavefront, increasing the resolution of the exposing pattern. A further method is described for designing lithographic masks to fabricate the hologram and to project the illuminating wavefront. In other embodiments, a simple personalization based on Talbot fringes and plasmonic interference is performed. | 03-21-2013 |

## Jaione Tirapu-Azpiroz, Hopewell Junction, NY US

Patent application number | Description | Published |
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20100281449 | Method For Forming Arbitrary Lithographic Wavefronts Using Standard Mask Technology - A desired set of diffracted waves using mask features whose transmissions are chosen from a set of supported values are generated. A representation of the mask as a set of polygonal elements is created. Constraints which require that the ratio of the spatial frequencies in the representation take on the amplitude ratios of the desired set of diffracted waves are defined. An optimization algorithm is used to adjust the transmission discontinuities at the edges of the polygons to substantial equality with the discontinuity values allowed by the set of supported transmissions while maintaining the constraints. | 11-04-2010 |