| Patent application number | Description | Published |
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| 20090173934 | Nonvolatile memory and three-state FETs using cladded quantum dot gate structure - The present invention discloses use of quantum dot gate FETs as a nonvolatile memory element that can be used in flash memory architecture as well as in a nonvolatile random access memory (NVRAM) configuration that does not require refreshing of data as in dynamic random access memories. Another innovation is the design of quantum dot gate nonvolatile memory and 3-state devices using modulation doped field-effect transistors (MODFETs), particularly MOS-gate field effect transistors. The cladded quantum dot gate MODFETs can be designed in Si—SiGe, InGaAs—InP and other material systems. The incorporation of 3-state FET devices in static random access memory (SRAM) cell is described to result in advanced multi-state memory operation. Unlike conventional SRAMs, the 3-state QD-FET based of SRAMs provides 3 and 4-state memory operation due to the utilization of the intermediate states particularly in CMOS configuration. QD-gate FETs, potentially suitable for 8 nm channel lengths, in vertical configuration (VFET) are also described. | 07-09-2009 |
| 20090184346 | Nonvolatile memory and three-state FETs using cladded quantum dot gate structure - The present invention discloses structures and method of fabricating cladded quantum dot gate nonvolatile memory and three-state field-effect transistor devices that can be scaled down to sub-22 nm dimensions and embedded along side with other functional circuits. Another innovation is the design of transport channel, which comprises an asymmetric coupled well structure comprising two or more wells. This structure enhances the retention time in nonvolatile memory by increasing the effective separation between channel charge and the quantum dots located in the floating gate. The cladded quantum dot gate FETs can be designed in Si, InGaAs—InP and other material systems. The 3-state FET devices form the basis of novel digital circuits using multiple valued logic and advanced analog circuits. One or more layers of SiO | 07-23-2009 |
| 20100025660 | SEMICONDUCTOR DEVICES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a device comprising a source region, a drain region and a gate layer; the source region, the drain region and the gate layer being disposed on a semiconductor host; the gate layer being disposed between source and drain regions; the gate layer comprising a first gate-insulator layer; a gate layer comprising carbon nanotubes and/or graphene. Disclosed herein too is a method comprising disposing a source region, a drain region and a gate layer on a semiconductor host; the gate layer being disposed between the source region and the drain region; the gate layer comprising carbon nanotubes and/or graphene. | 02-04-2010 |
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| 20100116691 | BIOSENSOR FOR CONTINUOUS MONITORING OF METABOLITES AND PROTEINS AND METHODS OF MANUFACTURE THEREOF - A biosensor comprises a substrate; a reference electrode; a working electrode; a counter electrode; and a plurality of permeability adjusting spacers. The reference electrode, the working electrode and the plurality of permeability adjusting spacers are all being disposed to be substantially parallel to each other to create a plurality of enzyme containing porous sections. The enzyme containing porous sections contain an enzyme; where the enzyme is operative to react with a metabolite to determine the concentration of the metabolite. By combining a number of the aforementioned biosensors, the differential concentration of a target enzyme or protein is determined by monitoring the changes on its metabolite substrates. | 05-13-2010 |
| 20100148293 | Miniaturized implantable sensor platform having multiple devices and sub-chips - An implantable, miniaturized platform and a method for fabricating the platform is provided, where the e platform includes a top cover plate and a bottom substrate, top cover plate including an epitaxial, Si-encased substrate and is configured to include monolithically grown devices and device contact pads, the Si-encased substrate cover plate including a gold perimeter fence deposited on its Si covered outer rim and wherein the bottom substrate is constructed of Si and includes a plurality of partial-Si-vias (PSVs), electronic integrated circuits, device pads, pad interconnects and a gold perimeter fence, wherein the device pads are aligned with a respective device contact pad on the top cover plate and includes gold bumps having a predetermined height, the top cover plate and the bottom substrate being flip-chip bonded to provide a perimeter seal and to ensure electrical connectivity between the plurality of internal devices and at least one external component. | 06-17-2010 |
| 20100224861 | Twin-drain spatial wavefunction switched field-effect transistors - A field-effect transistor is provided and includes source, gate and drain regions, where the gate region controls charge carrier location in the transport channel, the transport channel includes a asymmetric coupled quantum well layer, the asymmetric quantum well layer includes at least two quantum wells separated by a barrier layer having a greater energy gap than the wells, the transport channel is connected to the source region at one end, and the drain regions at the other, the drain regions include at least two contacts electrically isolated from each other, the contacts are connected to at least one quantum well. The drain may include two regions that are configured to form the asymmetric coupled well transport channel. In an embodiment, two sources and two drains are also envisioned. | 09-09-2010 |
| 20110005570 | High efficiency tandem solar cells and a method for fabricating same - A solar cell structure and a method for fabricating the solar cell structure is provided, where the cell structure includes a plurality of solar cells, wherein each of the solar cells is separated from each adjacent solar cell via at least one of a tunnel junction or a resonant tunneling structure interface, wherein each of the plurality of solar cells is at least partially constructed from a semiconductor material, wherein the semiconductor material has an energy band gap that harnesses photons having energies in a predetermined energy range which is responsive to its energy gap, and wherein each of the plurality of solar cells includes at least one of a p-n junction, an n-p junction, or a Schottky interface, and wherein each of the plurality of solar cells is configured to harness energies in a different solar spectral energy range than the other of the plurality of solar cells. | 01-13-2011 |
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| 20090022145 | SYSTEMS, METHODS, APPARATUS AND COMPUTER PROGRAM PRODUCTS FOR NETWORKING TRADING TURRET SYSTEMS USING SIP - Systems, methods, apparatus and computer program products are provided for sharing a resource including a subscription engine configured to subscribe to a first turret system to share the resource, a state change engine configured to receive a state change notification corresponding to the resource, from the turret system, and a failover engine configured to invite the turret system to initiate a connection to the resource. | 01-22-2009 |
| 20090022299 | SYSTEMS, METHODS, APPARATUS AND COMPUTER PROGRAM PRODUCTS FOR SHARING RESOURCES BETWEEN TURRET SYSTEMS AND PBXS USING SIP - Systems, methods, apparatus and computer program products are provided for sharing one or more resources across a turret system and a telephone exchange including an agent. The agent is configured to register into the telephone exchange as a predetermined device and to receive a state change notification of a resource from at least one of the telephone exchange and the turret system. Receipt of the state change notification causes the agent to change a state of a corresponding resource. | 01-22-2009 |
| 20090304168 | SOFTWARE BASED TRADING TURRET - A communications system including a turret switching system constructed to communicate to a Web server, a turret device, and to a remote communications device via a first communications network, the Web server being constructed to communicate to a client device via a second communications network, and the client device constructed to control switching across a plurality of lines. | 12-10-2009 |
| 20100110004 | CONVERGED DESKTOP BETWEEN A PC AND A TRADING TURRET - A personal computer and a telephony device are integrated using an input director and an input receiver. The input director is configured to receive an instruction from a user interface device, the instruction corresponding to a function of the telephony device. The input receiver is configured to receive the instruction from the input director and control the telephony device based on the instruction. | 05-06-2010 |
| 20110075653 | SYSTEMS, METHODS, AND COMPUTER PROGRAM PRODUCTS FOR PROVIDING A MANUAL RING-DOWN COMMUNICATION LINE USING SESSION INITIATION PROTOCOL - Systems, methods, and computer program products are provided for manual ring-down communication using Session Initiation Protocol (SIP). A first SIP user agent transmits a message to a second SIP user agent over an Internet Protocol (IP) network to establish a SIP session. The first SIP user agent determines that a signal key associated with a first communication device has been selected and transmits, to the second SIP user agent over the IP network, a start event message to cause a second communication device to activate an alert. The first SIP user agent determines that the signal key has been released and transmits over the IP network an end event message to deactivate the alert. The first SIP user agent transmits, to the second SIP user agent over the IP network, one or more subsequent INVITE messages at a predetermined repetition rate to refresh the SIP session. | 03-31-2011 |
| 20110206040 | SYSTEMS, METHODS, AND COMPUTER PROGRAM PRODUCTS FOR PROVIDING A MANUAL RING-DOWN COMMUNICATION LINE USING SESSION INITIATION PROTOCOL - Systems, methods, and computer program products are provided for manual ring-down communication using Session Initiation Protocol (SIP). A first SIP user agent transmits a message to a second SIP user agent over an Internet Protocol (IP) network to establish a SIP session. The first SIP user agent determines that a signal key associated with a first communication device has been selected and transmits, to the second SIP user agent over the IP network, a start event message to cause a second communication device to activate an alert. The first SIP user agent determines that the signal key has been released and transmits over the IP network an end event message to deactivate the alert. The first SIP user agent transmits, to the second SIP user agent over the IP network, one or more subsequent INVITE messages at a predetermined repetition rate to refresh the SIP session. | 08-25-2011 |
