Patent application number | Description | Published |
20120012944 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a memory block including a transistor region and a memory region. A variable resistance layer of the memory region acts as a gate insulating layer in the transistor region. | 01-19-2012 |
20120068137 | SWITCHING DEVICE AND MEMORY DEVICE INCLUDING THE SAME - A switching device includes a first electrode, a bipolar tunneling layer, and a second electrode. The bipolar tunneling layer is formed on the first electrode and includes a plurality of dielectric layers having different dielectric constants. The second electrode is formed on the bipolar tunneling layer. | 03-22-2012 |
20130026435 | SWITCHING DEVICE AND RESISTANCE CHANGE MEMORY DEVICE USING THE SAME - A switching device that provides bipolar current paths and a resistance change memory device using the switching device. The switching device includes a first electrode, a second electrode, and an amorphous carbon layer interposed between the first electrode and the second electrode and configured to control a bipolar current to flow therethrough in response to a voltage applied between the first electrode and the second electrode. | 01-31-2013 |
20130026437 | RESISTANCE VARIABLE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a resistance variable memory device, includes: providing a substrate having first contacts and second contacts, where the second contacts do not overlap the first contacts; forming a line pattern over the substrate, the line pattern overlapping a first line and including a stacked structure of a first electrode, a resistor, and a second electrode; forming a first contact hole to expose the second contact; forming an insulating spacer on a sidewall of the first contact hole; forming a third contact to fill the first contact hole having the insulating spacer formed therein; and forming a third electrode over the third contact such that the third electrode overlaps a second line extending in a second direction and is cut open over the first contact, where the first and second contacts are alternately arranged on the second line. | 01-31-2013 |
20130170282 | VARIABLE RESISTANCE MEMORY DEVICE - A variable resistance memory device includes: first and second structures that each include a first electrode, a second electrode, and a variable resistance material layer interposed between the first and second electrodes and configured to switch between different resistance states depending on a voltage applied across the variable resistance material layer; and a material layer interposed between the first and second structures and configured to pass a bidirectional current according to a voltage applied across the material layer. The first and second structures are symmetrical with respect to the material layer. | 07-04-2013 |
20130248798 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A variable resistance memory device includes active regions defined by an isolation layer in a semiconductor substrate, trenches in the semiconductor substrate, which extend in a direction crossing the active regions, junction regions formed in the active regions on both sides of the trenches, and variable resistance patterns interposed between the word lines and the junction regions. | 09-26-2013 |
20130248799 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A variable resistance memory device includes first electrodes, dielectric layer patterns vertically projecting from the first electrodes, variable resistance layer patterns surrounding side surfaces of the dielectric layer patterns and connected with the first electrodes, and second electrodes formed over the dielectric layer patterns and connected with the variable resistance layer patterns. | 09-26-2013 |
20130248802 | VARIABLE RESISTIVE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A variable resistive memory device includes a bit line, a word line, first electrodes and second electrodes, which are respectively arrayed in different directions, wherein a unit cell including a variable resistive material layer interposed between the first electrode and the second electrode is located at every intersection between the first electrode and the second electrode. | 09-26-2013 |
20130288391 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A variable resistance memory device includes vertical electrodes vertically projecting from a substrate, first horizontal electrodes stacked along the vertical electrodes, second horizontal electrodes stacked along the vertical electrodes, and a variable resistance layer interposed between the vertical electrodes and the first and second horizontal electrodes, wherein the first and second horizontal electrodes are arranged in directions crossing with each other. | 10-31-2013 |
20130328006 | SWITCHING DEVICE AND MEMORY DEVICE INCLUDING THE SAME - A switching device includes a first electrode, a bipolar tunneling layer, and a second electrode. The bipolar tunneling layer is formed on the first electrode and includes a plurality of dielectric layers having different dielectric constants. The second electrode is formed on the bipolar tunneling layer. | 12-12-2013 |