| Patent application number | Description | Published |
|---|
| 20080230748 | DISPERSANT HAVING MULTIFUNCTIONAL HEAD AND PHOSPHOR PASTE COMPOSITION COMPRISING THE SAME - Disclosed is a dispersant having a multifunctional head, and a phosphor paste composition comprising the dispersant. The dispersant has a multifunctional head that comprises an acidic group, a basic group and an aromatic group, thereby enhancing an affinity for the surface of phosphor particles and improving dispersibility. | 09-25-2008 |
| 20080296683 | CARBON NANOTUBE HAVING IMPROVED CONDUCTIVITY, PROCESS OF PREPARING THE SAME, AND ELECTRODE COMPRISING THE CARBON NANOTUBE - Provided are a method of doping carbon nanotubes, p-doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes. Particularly, a method of doping carbon nanotubes having improved conductivity by reforming the carbon nanotubes using an oxidizer, doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes are provided | 12-04-2008 |
| 20080299374 | TRANSPARENT ELECTRODE COMPRISING CARBON NANOTUBE AND METHOD OF PREPARING THE SAME - Disclosed is a method of manufacturing a transparent electrode having a carbon nanotube. The carbon nanotube powder is dispersed in a solvent to form a carbon nanotube ink. The carbon nanotube ink is coated on a substrate to prepare a carbon nanotube film. The carbon nanotube has a defect formed on a surface thereof. The defect is formed through an acid treatment process of immersing the carbon nanotube powder or the carbon nanotube film in a nitric acid, a sulfuric acid, a hydrochloric acid, a phosphoric acid, or a mixture thereof. The defect can be formed through an ultrasonic treatment process of exposing the carbon nanotube powder or the carbon nanotube film to an ultrasonic wave having a predetermined frequency and intensity. | 12-04-2008 |
| 20090068470 | GRAPHENE SHELL AND PROCESS OF PREPARING THE SAME - Provided are a process for economically preparing a graphene shell having a desired configuration which is applicable in various fields wherein in the process the thickness of the graphene shell can be controlled, and a graphene shell prepared by the process. | 03-12-2009 |
| 20090068471 | GRAPHENE SHEET AND PROCESS OF PREPARING THE SAME - Provided are a graphene sheet and a process of preparing the same. Particularly, a process of economically preparing a large-area graphene sheet having a desired thickness and a graphene sheet prepared by the process are provided. | 03-12-2009 |
| 20090072198 | SULFUR-CONTAINING DISPERSANT AND SULFIDE PHOSPHOR PASTE COMPOSITION COMPRISING THE SAME - A sulfide phosphor paste composition comprising a sulfur-containing dispersant, and a fluorescent film prepared therefrom, are provided. The sulfur-containing dispersant has a dual head structure containing both a carboxyl group and a thiol group or a structure containing a thiol or thiophene group as a head group. An oligomeric sulfur-containing dispersant is also provided. Adsorption of the dispersant on the surface of the sulfide phosphor prevents aggregation of the phosphor particles, and thereby improves the dispersibility of the sulfide phosphor paste composition, the homogeneity of the phosphor in the paste composition, and the density of a film produced from the paste composition. Fluorescent films and display devices produced from the phosphor paste composition exhibit improved luminescent properties and excellent processability. | 03-19-2009 |
| 20090075450 | Method of manufacturing stack-type capacitor and semiconductor memory device having the stack-type capacitor - A stack-type capacitor includes a lower electrode, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, wherein the lower electrode includes a first metal layer having a cylindrical shape and a second metal layer filled in the first metal layer. In the capacitor, an amount of oxygen included in the lower electrode is decreased to suppress oxidation of a TiN layer. Thus, a stable stack-type capacitor may be formed, which increases greatly the performance of highly integrated DRAMs. | 03-19-2009 |
| 20090101964 | Method of forming nano dots, method of fabricating the memory device including the same, charge trap layer including the nano dots and memory device including the same - Provided are a method of forming nano dots, method of fabricating a memory device including the same, charge trap layer including the nano dots and memory device including the same. The method of forming the nano dots may include forming cores, coating surfaces of the cores with a polymer, and forming graphene layers covering the surfaces of the cores by thermally treating the cores coated with the polymer. Also, the cores may be removed after forming the graphene layers. In addition, the surfaces of the cores may be coated with a graphitization catalyst material before coating the cores with the polymer. Also, the cores may include metal particles that trap charges and may also function as a graphitization catalyst. | 04-23-2009 |
| 20090127560 | Poly-crystalline thin film, thin film transistor formed from a poly-crystalline thin film and methods of manufacturing the same - Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer. | 05-21-2009 |
| 20090146111 | REDUCED GRAPHENE OXIDE DOPED WITH DOPANT, THIN LAYER AND TRANSPARENT ELECTRODE - Disclosed herein is a reduced graphene oxide doped with a dopant, and a thin layer, a transparent electrode, a display device and a solar cell including the reduced graphene oxide. The reduced graphene oxide doped with a dopant includes an organic dopant and/or an inorganic dopant. | 06-11-2009 |
| 20090215233 | PHOTORESIST COMPOSITION AND METHOD OF MANUFACTURING ARRAY SUBSTRATE USING THE SAME - A photoresist composition includes a binder resin, a photo acid generator, an acryl resin having four different types of monomers, and a solvent. | 08-27-2009 |
| 20090256175 | Method of doping transistor comprising carbon nanotube, method of controlling position of doping ion, and transistors using the same - Provided are a method of doping a carbon nanotube (CNT) of a field effect transistor and a method of controlling the position of doping ions. The method may include providing a source, a drain, the CNT as a channel between the source and the drain, and a gate, applying a first voltage to the gate, and adsorbing ions on a surface of the CNT. | 10-15-2009 |
| 20090258497 | PHOTORESIST RESIN, AND METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING DISPLAY PANEL USING THE SAME - A photoresist resin composition, a method for forming a pattern and a method for manufacturing a display panel using the photoresist resin composition are disclosed. The photoresist resin composition includes an alkali soluble resin, a photoresist compound, and a solvent, wherein the alkali soluble resin includes a first polymer resin represented by the following Chemical Formula 1, wherein, of R | 10-15-2009 |
| 20090324897 | GRAPHENE PATTERN AND PROCESS OF PREPARING THE SAME - Provided are a graphene pattern and a process of preparing the same. Graphene is patterned in a predetermined shape on a substrate to form the graphene pattern. The graphene pattern can be formed by forming a graphitizing catalyst pattern on a substrate, contacting a carbonaceous material with the graphitizing catalyst and heat-treating the resultant. | 12-31-2009 |
| 20100032737 | Nano-magnetic memory device and method of manufacturing the device - A nano-magnetic memory device capable of writing/reading multi data in the nano-magnetic memory cell by controlling an amount of an induced current which is formed after a magnetic nanodot is perturbed and rearranged according to a word line current flowing from the first electrode through a nanowire of the nano-magnetic memory device to the second electrode. Consequently, a size of the memory device is reduced and a density of the memory device may be improved by providing a simplified nano-magnetic memory device of which a cell size is smaller. | 02-11-2010 |
| 20100103121 | TOUCH SCREEN PANEL INTEGRATED INTO LIQUID CRYSTAL DISPLAY, METHOD OF MANUFACTURING THE SAME, AND TOUCH SENSING METHOD - A touch screen panel includes: a first substrate and a second substrate, which face each other with respect to a liquid crystal interposed therebetween; and a touch sensor interposed between the first substrate and the second substrate. The touch sensor includes: a plurality of first touch signal lines disposed on the first substrate and extending in a first direction; a protective layer disposed on the first substrate, the protective layer including a dielectric material and substantially the plurality of first touch signal lines; a plurality of contact pads disposed on the protective layer; a plurality of second touch signal lines disposed on the second substrate and extending in a second direction perpendicular to the first direction; and a plurality of touch sensor spacers electrically connected to the plurality of second touch signal lines. A gap between the touch sensor spacers and the plurality of contact pads is defined, and the spacers are disposed to face the plurality of contact pads. | 04-29-2010 |
| 20100109074 | Gate structure, semiconductor memory device having the gate structure and methods of fabricating the same - A gate structure using nanodots as a trap site, a semiconductor device having the gate structure and methods of fabricating the same are provided. The gate structure may include a tunneling layer, a plurality of nanodots on the tunneling layer, and a control insulating layer including a high-k dielectric layer on the tunneling layer and the nanodots. A semiconductor memory device may further include a semiconductor substrate, the gate structure according to example embodiments on the semiconductor substrate and a first impurity region and a second impurity region in the semiconductor substrate, wherein the gate structure is in contact with the first and second impurity regions. | 05-06-2010 |
| 20100117034 | Organic semiconductor material using CNTs increased, organic semiconductor thin film using the same and organic semiconductor device employing the thin film - Example embodiments of the present invention relate to an organic semiconductor material using carbon nanotubes having increased semiconductivity, an organic semiconductor thin film using the same and an organic semiconductor device employing the thin film. By using the organic semiconductor material according to example embodiments of the present invention, a room-temperature wet process may be applied and a high-performance organic semiconductor device capable of simultaneously exhibiting increased electrical properties is provided. | 05-13-2010 |
| 20100202035 | ELECTROCHROMIC DEVICE AND METHOD OF FABRICATING THE SAME - An electrochromic device includes a first substrate, a second substrate facing the first substrate, a first electrode disposed on the first substrate, a carbon nano-structured electrode layer disposed on the first electrode, a second electrode disposed on the second substrate, an electrochromic layer disposed on the second electrode, and an electrolyte layer interposed between the first substrate and the second substrate. | 08-12-2010 |
| 20100294998 | AROMATIC IMIDE-BASED DISPERSANT FOR CARBON NANOTUBES AND CARBON NANOTUBE COMPOSITION COMPRISING THE SAME - Disclosed herein are an aromatic imide-based dispersant for CNTs and a carbon nanotube composition comprising the same. Having an aromatic ring structure advantageously realizing adsorption on carbon nanotubes, the dispersant, even if used in a small amount, can disperse a large quantity of carbon nanotubes. | 11-25-2010 |
| 20100307589 | ORGANIC SOLAR CELL AND METHOD OF FABRICATING THE SAME - An organic solar cell includes; a cathode, an anode disposed substantially opposite the cathode, a photoactive layer disposed between the cathode and the anode, wherein the photoactive layer includes an electron donor, an electron acceptor, and a nanostructure, and wherein the nanostructure includes an electron conductive material selected from the group consisting of a semiconductor element, a semiconductor compound, a semiconductor carbon material, a metallic carbon material which is surface-treated with a hole blocking material, a metal which is surface-treated with a hole blocking material and a combination thereof. | 12-09-2010 |
| 20100320074 | METHOD FOR PREPARING GALLIUM NITRIDE NANOPARTICLES - A method for preparing gallium nitride nanoparticles includes providing a pair of electrodes; the pair of electrodes being opposedly disposed to one another. One electrode of the pair of electrodes is filled with gallium nitride powder. The pair of electrodes is dipped in a liquid. An arc discharge is produced between the pair of electrodes. The arc discharge produces a plasma between the pair of electrodes. | 12-23-2010 |
| 20100326524 | ORGANIC SOLAR CELL AND METHOD OF FABRICATING THE SAME - An organic solar cell includes; a cathode, an anode disposed substantially opposite the cathode, a photoactive layer disposed between the cathode and the anode, and an electron blocking layer disposed between the anode and the photoactive layer, wherein the photoactive layer includes; an electron donor, an electron acceptor disposed adjacent to the electron donor, and a nanostructure disposed adjacent to at least one of the electron donor and the electron acceptor, wherein the nanostructure is connected to the anode, and includes a hole transporting material selected from the group consisting of a semiconductor element, a semiconductor compound, a semiconductor carbon material, and a combination thereof, and the semiconductor element, the semiconductor compound, or the semiconductor carbon material satisfies the following Equation 1 and 2: | 12-30-2010 |
| 20110003907 | DISPERSANT FOR CARBON NANOTUBES AND CARBON NANOTUBE COMPOSITION COMPRISING THE SAME - The present invention discloses a dispersant for carbon nanotubes having excellent dispersion ability and to a carbon nanotube composition including the dispersant. In the dispersant, the heads and tails of the dispersant are regioregularly arranged in one direction, and the structural properties of the dispersant are controlled such that the ratio of heads to tails is 1 or more, thereby effectively stabilizing and dispersing carbon nanotubes in various dispersion media, such as an organic solvent, water, a mixture thereof and the like, compared to conventional dispersants. | 01-06-2011 |
| 20110033677 | GRAPHENE BASE AND METHOD OF PREPARING THE SAME - A graphene base, including: graphene; and a substrate, wherein the graphene is formed directly on at least one surface of the substrate, and at least about 90 percent of an area of the surface of the substrate does not have a graphene wrinkle. | 02-10-2011 |
| 20110043460 | TOUCH PANEL - A touch panel includes an infrared (“IR”) sensor and an IR source that supplies IR light to the infrared sensor. The IR sensor includes an absorbing layer and a PN junction layer disposed on the absorbing layer. The absorbing layer includes a material that selectively absorbs light having a wavelength in an infrared range. The PN junction layer includes a P-type organic material layer and an N-type organic material layer. | 02-24-2011 |
| 20110049481 | OPTOELECTRONIC DEVICE - An optoelectronic device including a first electrode, an active layer disposed on the first electrode, a second electrode disposed on the active layer, and a self-assembled monolayer interposed between the first electrode and the active layer, interposed between the active layer and the second electrode, or disposed inside the active layer, wherein the self-assembled monolayer includes a first compound and a second compound having different functional groups from each other. | 03-03-2011 |
| 20110050042 | APPARATUS FOR GENERATING ELECTRICAL ENERGY AND METHOD FOR MANUFACTURING THE SAME - Disclosed is an apparatus for generating electrical energy that includes; a first electrode, and a second electrode spaced apart from the first electrode, and an energy generation layer disposed between the first electrode and the second electrode, wherein the energy generation layer comprises a photoelectric conversion layer and a plurality of piezoelectric nanowires, and wherein when an external force is applied to at least one of the first electrode and the second electrode, the plurality of piezoelectric nanowires are transformed to generate electrical energy. | 03-03-2011 |
| 20110086176 | CARBON NANOTUBE HAVING IMPROVED CONDUCTIVITY, PROCESS OF PREPARING THE SAME, AND ELECTRODE COMPRISING THE CARBON NANOTUBE - Provided are a method of doping carbon nanotubes, p-doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes. Particularly, a method of doping carbon nanotubes having improved conductivity by reforming the carbon nanotubes using an oxidizer, doped carbon nanotubes prepared using the method, and an electrode, a display device or a solar cell including the carbon nanotubes are provided | 04-14-2011 |
| 20110089376 | DISPERSANT HAVING MULTIFUNCTIONAL HEAD AND PHOSPHOR PASTE COMPOSITION COMPRISING THE SAME - Disclosed is a dispersant having a multifunctional head, and a phosphor paste composition comprising the dispersant. The dispersant has a multifunctional head that comprises an acidic group, a basic group and an aromatic group, thereby enhancing an affinity for the surface of phosphor particles and improving dispersibility. | 04-21-2011 |
| 20110095268 | TRANSISTOR AND FLAT PANEL DISPLAY INCLUDING THIN FILM TRANSISTOR - A transistor includes at least three terminals comprising a gate electrode, a source electrode and a drain electrode, an insulating layer disposed on a substrate, and a semiconductor layer disposed on the substrate, wherein a current which flows between the source electrode and the drain electrode is controlled by application of a voltage to the gate electrode, where the semiconductor layer includes a graphene layer and at least one of a metal atomic layer and a metal ion layer, and where the metal atomic layer or the metal ion layer is interposed between the graphene layer and the insulating layer. | 04-28-2011 |
| 20110101303 | LIGHT-EMITTING DEVICE COMPRISING SEMICONDUCTOR NANOCRYSTAL LAYER FREE OF VOIDS AND METHOD FOR PRODUCING THE SAME - A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability. | 05-05-2011 |
| 20110101315 | PIEZOELECTRIC NANOWIRE STRUCTURE AND ELECTRONIC DEVICE INCLUDING THE SAME - A piezoelectric nanowire structure includes a base substrate, a plurality of piezoelectric nanowires disposed on the base substrate, and a piezoelectric organic material layer disposed on the base substrate and covering the plurality of piezoelectric nanowires. | 05-05-2011 |
| 20110104442 | GRAPHENE SHEET, GRAPHENE BASE INCLUDING THE SAME, AND METHOD OF PREPARING THE GRAPHENE SHEET - A graphene sheet including graphene comprising ten or fewer wrinkles per 1,000 square micrometers of the graphene. | 05-05-2011 |
| 20110104507 | LAYERED STRUCTURE INCLUDING GRAPHENE AND AN ORGANIC MATERIAL HAVING A CONJUGATED SYSTEM, AND METHOD OF PREPARING THE SAME - A layered structure including graphene, wherein a basal plane of the graphene is a (0001) plane; and a layer including an organic material having a conjugated system disposed on the graphene, wherein the layer comprising the organic material layer having the conjugated system is bound to the (0001) plane of the graphene by a π-π interaction, and a method of preparing the same. | 05-05-2011 |
| 20110111577 | SEMICONDUCTOR CARBON NANOTUBES AND METHOD OF SELECTIVELY GROWING SEMICONDUCTOR CARBON NANOTUBES USING LIGHT IRRADIATION - A method of selectively growing a plurality of semiconductor carbon nanotubes using light irradiation. The method includes disposing a plurality of nanodots, which include a catalyst material, on a substrate; growing a plurality of carbon nanotubes from the plurality of nanodots, and irradiating light onto the nanodot to selectively grow the plurality of semiconductor carbon nanotubes. | 05-12-2011 |
| 20110123776 | GRAPHENE LAMINATE AND METHOD OF PREPARING THE SAME - A graphene laminate including a substrate, a binder layer on the substrate, and graphene on the binder layer, wherein the graphene is bound to the substrate by the binder layer. | 05-26-2011 |
| 20110127471 | DOPED GRAPHENE, METHOD OF MANUFACTURING THE DOPED GRAPHENE, AND A DEVICE INCLUDING THE DOPED GRAPHENE - A composition including graphene; and a dopant selected from the group consisting of an organic dopant, an inorganic dopant, and a combination including at least one of the foregoing. | 06-02-2011 |
| 20110127497 | ORGANIC LIGHT EMITTING DEVICE USING GRAPHENE - An organic light emitting device including graphene. The organic light emitting device includes a first electrode that is interposed between a transparent substrate and an organic layer emitting light, and includes graphene having a thickness of about 0.1 nanometer (nm) to about 10 nanometers (nm). | 06-02-2011 |
| 20110129675 | MATERIAL INCLUDING GRAPHENE AND AN INORGANIC MATERIAL AND METHOD OF MANUFACTURING THE MATERIAL - A material including: graphene; and an inorganic material having a crystal system, wherein a crystal plane of the inorganic material is oriented parallel to the (0001) plane of the graphene. The crystal plane of the inorganic material has an atomic arrangement of a hexagon, a tetragon, or a pentagon. | 06-02-2011 |
| 20110155478 | THERMOELECTRIC TOUCH SENSOR - A thermoelectric touch sensor includes a first electrode, a thin film layer provided on the first electrode and including a thermoelectric material, a second electrode provided on the thin film layer, a sensing unit which senses at least one of a current flowing between the first electrode and the second electrode and a voltage applied between the first electrode and the second electrode. | 06-30-2011 |
