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Jae-Woo Park
Jae-Woo Park, Suwon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100023817 | TEST SYSTEM AND METHOD - A test system includes a memory device having a data I/O circuit connected to a data write-in path and a data read-out path. During test mode, the data I/O circuit retains a copy of test pattern data received in the I/O circuit via the data write-in path as output test data before the test pattern data is stored in a memory cell array as write data. The test system also includes a test device generating the test pattern data, receiving the output test data from the memory device, comparing the output test data with the test pattern data, and generating an error detection signal on the basis of the comparison. The error detection signal indicates the presence or absence of a defect in the data write-in or read-out path. | 01-28-2010 |
| 20100232221 | NONVOLATILE MEMORY DEVICE AND METHOD OF READING SAME - A method of reading a nonvolatile memory device comprises sensing data stored in memory cells adjacent to selected memory cells to identify adjacent aggressor cells, and performing separate precharge operations on bitlines connected to selected memory cells having adjacent aggressor cells and on bitlines connected to selected memory cells having adjacent non-aggressor cells. | 09-16-2010 |
Jae-Woo Park, Gyeongsangbuk-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20100159367 | A HALF TONE MASK HAVING MULTI-HALF PERMEATION PART AND A METHOD OF MANUFACTURING THE SAME - Disclosed are a half tone mask having a multi semi-transmission part and a manufacturing method thereof that can pattern a plurality of layers using one mask, by having at least two or more semi-transmission parts with light transmission that are different from each other. The half tone mask having a multi semi-transmission part comprises a transparent substrate, a light transmission part formed the transparent substrate to transmit irradiation light of a predetermined wavelength band, a light shielding part formed the transparent substrate to shield the irradiation light of the predetermined wavelength band, and at least two or more semi-transmission parts formed by depositing semi-transmission material on the transparent substrate to pass through the irradiation light of the predetermined wavelength band with each different light transmission. | 06-24-2010 |
Jae-Woo Park, Seoulsi KR
| Patent application number | Description | Published |
|---|---|---|
| 20090195316 | RE-CONFIGURABLE LOW NOISE AMPLIFIER UTILIZING FEEDBACK CAPACITORS - A re-configurable low noise amplifier utilizing feedback capacitors is disclosed. The low noise amplifier has output transistors, capacitor switch cells, and capacitance distributors all in an output terminal. The output transistors are for controlling selection of a specific frequency band in a wide band of frequencies. The capacitor switch cells are for adjusting a harmonic frequency for the specific frequency band. The capacitance distributor is for determining an amount of gain, and according to the gain, an output impedance feeds back to an input terminal of the low noise amplifier for input matching. Since the output terminal is at high impedance and suitable for a wide band of frequencies, input matching not only makes the low noise amplifier applicable to kinds of wireless communication standards, but also fulfills high gain and low noise figure. | 08-06-2009 |
Jae-Woo Park, Daejeon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20090106773 | Method and system for user-friendly forwarding entry management based on inter-process communication - A method and system for user-friendly forwarding entry management based on inter-process communication (IPC) is provided. The system includes a function input unit inputting a command for forwarding entry management; and an automated process unit verifying parameters included in the function to create a user table, extracting information for creating a forwarding entry management table from the user table, and outputting a forwarding entry management message including the extracted information. The method includes inputting a command for forwarding entry management; verifying parameters included in the command; creating a user table using the parameters if the verification is successful; extracting information for creating a forwarding entry management table from the user table; and outputting a forwarding entry management message including the extracted information. | 04-23-2009 |
| 20090135833 | Ingress node and egress node with improved packet transfer rate on multi-protocol label switching (MPLS) network, and method of improving packet transfer rate in MPLS network system - Provided are an ingress node and an egress node on a Multi-Protocol Label Switching (MPLS) network, with an improved packet transfer rate, and a packet transfer rate improving method in a MPLS network system. By assigning a MPLS label to a destination MAC address of a packet in order to guarantee Quality of Service (QoS), it is possible to distributively transmit packets through a variety of paths on a MPLS network and thus improve a packet transfer rate. | 05-28-2009 |
Jae-Woo Park, Gyeongsangnam-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20080264743 | DAMPER EQUIPPED WITH RELATIVE DISPLACEMENT DETECTING SENSOR - The present invention relates to a cylinder which has hollow portion therein; a piston rod which is inserted through an upper side of the cylinder and has a groove pattern having plurality of convex portions and concave portions which are alternately formed; a piston valve which is connected with a lower end of the piston rod so as to be reciprocated in the cylinder and has a fluid passing hole which is formed in an up and down direction; a rod guide which closes up an upper end of the cylinder tightly and guides an up-down movement of the piston rod and which has a through-hole at a side portion thereof; and a sensor module which is installed to the rod guide so as to detect a movement of the piston rod by using a variation in magnetic field generated when the piston rod is moved. | 10-30-2008 |
| 20080265876 | SENSOR MODULE FOR DETECTING RELATIVE DISPLACEMENT AND METHOD OF DETECTING MOVING DIRECTION USING THE SAME - The present invention relates to a sensor module for detecting a relative displacement of an object having a groove pattern with alternately formed projection and depression, which comprises a magnet for generating a magnetic field; a giant magneto resistance (GMR) sensor installed between the magnet and the object to detect a variation in the magnetic field and output an electric signal; a signal processing part for processing the output signal from the GMR sensor to output a square wave; and a housing for supporting the magnet the GMR sensor and the signal processing part, and a method of detecting a moving direction using the same. | 10-30-2008 |
Jae-Woo Park, Daegu KR
| Patent application number | Description | Published |
|---|---|---|
| 20080251221 | Blind Type Curtain - The present invention relates to a blind type curtain, and more specifically to a blind type curtain, obtained by forming several blind unit pieces formed on rear surface of the textile curtain at regular interval, such that the functions such as light beam regulation, sight-blocking, soundproofing, anti-cold, and anti-rat can be performed, and the function such as interior can be simultaneously performed, by which these functions are further magnified, of which the manufacture and handling is easy, used as a combined use of indoor and outdoor, and which provides no concern about noise and breakage. That is, a membrane shaped blind unit piece | 10-16-2008 |
Jae-Woo Park, Yuseong-Gu KR
| Patent application number | Description | Published |
|---|---|---|
| 20080237595 | THIN FILM TRANSISTOR INCLUDING TITANIUM OXIDES AS ACTIVE LAYER AND METHOD OF MANUFACTURING THE SAME - Disclosed herein is a method of manufacturing a thin film transistor including titanium oxides as an active layer and the structure of the thin film transistor film manufactured using the method. The thin film transistor includes: a substrate; an active layer formed on the substrate using polycrystalline or amorphous titanium oxides; and an insulating layer formed on the active layer. Further, the method of manufacturing the thin film transistor includes: forming a substrate; forming an active layer on the substrate using polycrystalline or amorphous titanium oxides; and forming an insulating layer on the active layer. The present invention is advantageous in that the performance of the thin film transistor can be improved, the thin film transistor can be manufactured at low cost, harmful environmental problems can be solved, and the thin film transistor can be widely applied to various electronic apparatuses including, but not limited to, integrated drivers in active-matrix displays and transparent electronic devices. | 10-02-2008 |
Jae-Woo Park, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20110192800 | MAGNETIC-CORED DENDRIMER, THE METHOD FOR PREPARING THE SAME, AND THE CONTAMINANT TREATMENT METHOD USING THE SAME - Provided is a magnetic-cored dendrimer represented by the following Chemical Formula (1): | 08-11-2011 |
Jae-Woo Park, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20110215322 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A thin film transistor includes a gate electrode formed on a substrate, a semiconductor pattern overlapped with the gate electrode, a source electrode overlapped with a first end of the semiconductor pattern and a drain electrode overlapped with a second end of the semiconductor pattern and spaced apart from the source electrode. The semiconductor pattern includes an amorphous multi-elements compound including a II B element and a VI A element or including a III A element and a V A element and having an electron mobility no less than 1.0 cm | 09-08-2011 |
Jae-Woo Park, Seongnam-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20110284836 | OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR - A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a gate insulation layer and an oxide semiconductor pattern. The source and drain electrodes include a first metal element with a first oxide formation free energy. The oxide semiconductor pattern has a first surface making contact with the gate insulation layer and a second surface making contact with the source and drain electrodes to be positioned at an opposite side of the first surface. The oxide semiconductor pattern includes an added element having a second oxide formation free energy having an absolute value greater than or equal to an absolute value of the first oxide formation free energy, wherein an amount of the added element included in a portion near the first surface is zero or smaller than an amount of the added element included in a portion near the second surface. | 11-24-2011 |