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Jae Seon
Jae Seon Jang, Daejeon KR
| Patent application number | Description | Published |
|---|---|---|
| 20100317285 | ARRANGEMENT METHOD OF THE DISTRIBUTED REPEATER AND SYSTEM THEREOF - The present invention relates to a method of arranging distributed repeaters and distributed repeater system in a mobile communication system. In a method of arranging at least one base station and repeaters in a mobile communication system, a base station cell is formed and N repeater service areas are formed at boundaries of the base station cell. A base station is arranged at the center of the base station cell and N repeaters are arranged at boundaries between the base station service area and the repeater service areas. The number of repeaters is determined and output powers of the base station and the repeaters are determined according to a ratio of a base station service radius (R) to each repeater service radius (r). Accordingly, UARI or DARI is decreased, and coverage holes and excessive coverage overlaps can be remarkably reduced, so that network average capacity can be improved. | 12-16-2010 |
Jae Seon Seo, Goyang-Si, Gyeonggi-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20100082020 | MEDICAL LASER APPARATUS HAVING CAPACITANCE SENSOR AND LASER EMISSION CONTROL DEVICE - A medical laser apparatus having a capacitance sensor and a laser emission control device is provided, which can improve the safety by sensing whether a laser handpiece is in contact with a skin using the capacitance sensor and emitting a laser beam only when the handpiece is in contact with the skin, and which can improve the accuracy by making it possible to confirm whether the handpiece stands perpendicular to the skin surface. The medical laser apparatus includes a main body | 04-01-2010 |
Jae Seon Yu, Icheon-Si KR
| Patent application number | Description | Published |
|---|---|---|
| 20100159683 | Method for Fabricating Semiconductor Device Having Recess Channel - A method for fabricating a semiconductor device having a recess channel includes forming an isolation layer that delimits an active region over a semiconductor substrate; exposing a region to be formed with a bulb recess trench over the semiconductor substrate; forming an upper trench by etching the exposed portion of the semiconductor substrate; forming, on a side wall of the upper trench, a silicon nitride barrier layer that exposes a bottom face of the upper trench but blocks a side wall of the upper trench; forming a lower trench of a bulb type by etching the exposed bottom face of the upper trench using the etch barrier layer as an etch mask, to form the bulb recess trench including the upper trench and the lower trench; forming a fin-structured bottom protrusion part including an upper face and a side face by etching the isolation layer so that the isolation layer has a surface lower than the bottom face of the lower trench; and forming a gate stack overlapped with the bulb recess trench and the bottom protrusion part. | 06-24-2010 |
Jae-Seon Lee, Seoul KR
| Patent application number | Description | Published |
|---|---|---|
| 20100274774 | DIGITAL DATA TAGGING APPARATUS, SYSTEM AND METHOD FOR PROVIDING TAGGING AND SEARCH SERVICE USING SENSORY AND ENVIRONMENTAL INFORMATION - Provided are a digital data tagging apparatus for generating sensory and environmental information as a tag and endowing digital data with the sensory and environmental information that is automatically extracted using sensory sensor data and environmental sensor data, all of which are sensed by humans through their sensory organs, and a system and method for providing a tagging and search service using sensory and environmental information. The digital data tagging apparatus, and the system and method for providing a tagging and search service may be useful to enable users to search and use digital data more effectively and abundantly through the later use of the sensory and environmental information by collectively recognizing sensory and environmental information and automatically or manually endowing digital data with the recognized sensory and environmental information as a tag, wherein the sensory and environmental information are sensed by humans through their sensory sensors such as an olfactory sensor, a taste sensor and a tactile sensor; an environmental sensor such as temperature, humidity, illumination intensity and wind speed sensors, etc., as well as a camera or a mic. | 10-28-2010 |
| 20100304409 | METHOD FOR DETECTING PREMATURE SENESCENCE IN TUMOR CELLS AND A KIT FOR DETECTING PREMATURE SENESCENCE IN TUMOR CELLS - The present invention provides a method for detecting senescence in tumor cells and a kit for detecting senescence in tumor cells. eEF1A1 and CD markers are provided, wherein changes in the levels of the markers are correlated with premature senescence of tumor cells. | 12-02-2010 |
Jae-Seon Yu, Kyoungki-Do KR
| Patent application number | Description | Published |
|---|---|---|
| 20080233730 | Method for fabricating semiconductor device - A method for fabricating a semiconductor device includes providing a substrate where a cell region and a peripheral region are defined, stacking a conductive layer, a hard mask layer, a metal-based hard mask layer, and an amorphous carbon (C) pattern over the substrate etching the metal-based hard mask layer using the amorphous C pattern as an etch mask, thereby forming a resultant structure, forming a photoresist pattern covering the resultant structure in the cell region while exposing the resultant structure in the peripheral region, decreasing a width of the etched metal-based hard mask layer in the peripheral region, removing the photoresist pattern and the amorphous C pattern, and forming a conductive pattern by etching the hard mask layer and the conductive layer using the etched metal-based hard mask layer as an etch mask. | 09-25-2008 |
Jae-Seon Yu, Ichon-Shi KR
| Patent application number | Description | Published |
|---|---|---|
| 20080213990 | METHOD FOR FORMING GATE ELECTRODE IN SEMICONDUCTOR DEVICE - A method for forming a gate electrode in a semiconductor device includes providing a substrate, forming a gate insulation layer over the substrate, forming first and second conductive layers over the gate insulation layer, forming a hard mask pattern over the second conductive layer, etching the second conductive layer using the hard mask pattern as an etch mask, performing an oxidation process to form an anti-oxidation layer on a sidewall of the etched second conductive layer, and etching the first conductive layer using the hard mask as an etch mask. | 09-04-2008 |
| 20080227281 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH RECESS GATE - A method for fabricating a semiconductor device includes forming a sacrificial layer having a stack structure of a first insulation layer, a first conductive layer and a second insulation layer over a substrate, forming a recess by etching the sacrificial layer and the substrate, forming a gate insulation layer over a recess surface, filling a second conductive layer in the recess and between etched sacrificial layers, forming a gate electrode metal layer, a gate hard mask layer and a gate mask pattern over a resultant substrate, etching layers formed below the gate mask pattern by using the gate mask pattern until the first conductive layer is exposed, thereby forming an initial gate pattern, forming a capping layer on a sidewall and a top portion of the initial gate pattern, and etching an exposed portion by using the capping layer as a mask until the first insulation layer is exposed, thereby forming a final gate pattern. | 09-18-2008 |