Patent application number | Description | Published |
20080248637 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - In one embodiment, a gate insulating layer, a conductive layer, and a metal layer are formed over a semiconductor substrate. An ion implantation region is formed in an interface of the conductive layer and the metal layer by performing an ion implantation process. A flash annealing process is performed on the ion-implanted semiconductor substrate. The metal layer, the conductive layer, and the gate insulating layer are patterned. | 10-09-2008 |
20090053881 | METHOD OF FORMING DIELECTRIC LAYER OF SEMICONDUCTOR MEMORY DEVICE - A method of forming a dielectric layer of a semiconductor memory device is provided. The method includes forming a first insulating layer over a semiconductor substrate, performing a first plasma treatment process in order to densify a film of the first insulating layer, and forming a high-k insulating layer, which has a dielectric constant higher than that of the first insulating layer, on the first insulating layer. After second insulating layer is formed on the high-k insulating layer. A second plasma treatment process is performed in order to densify a film of the second insulating layer. | 02-26-2009 |
20090053905 | METHOD OF FORMING DIELECTRIC LAYER OF SEMICONDUCTOR MEMORY DEVICE - The invention relates to a method of forming a dielectric layer of a semiconductor memory device. According to an aspect of the invention, the method includes forming a high-k layer over a semiconductor substrate, and performing a plasma treating the high-k layer at a temperature less than the temperature in which the high-k layer would crystallize. | 02-26-2009 |
20090181517 | METHOD OF FORMING FLASH MEMORY DEVICE - The present invention relates to a method of forming a flash memory device, which is capable of forming floating gates. According to a method of forming a flash memory device in accordance with the present invention, isolation mask patterns are first formed over a semiconductor substrate. Trenches are formed by performing an etching process using the isolation mask patterns. Isolation layers are formed between the isolation mask patterns, including the insides of the respective trenches. The isolation mask patterns are removed. Tunnel dielectric layers and crystallized first conductive layers are sequentially formed over the exposed semiconductor substrate. A dielectric layer and a second conductive layer are formed over the isolation layers and the first conductive layers. | 07-16-2009 |
20100029091 | Method of Forming Tunnel Insulation Layer in Flash Memory Device - A method of forming a tunnel insulating layer in a flash memory device, comprising: forming an oxide layer on a semiconductor substrate, forming a nitrogen-containing layer to a surface of the oxide layer, and forming a nitrogen-accumulating layer on an interface defined between the semiconductor substrate and the oxide layer. | 02-04-2010 |
20100184283 | Method of Manufacturing Flash Memory Device - A method of manufacturing a flash memory device comprises forming a gate insulating layer on a semiconductor substrate, forming silicon seed crystals on a surface of the gate insulating layer by reacting a nitrogen or oxygen atmosphere gas and a silicon source gas, forming a first layer for a floating gate over the gate insulating layer and the silicon seed crystals by increasing an amount of the silicon source gas, and forming a second layer for a floating gate on the first layer for a floating gate. | 07-22-2010 |