Patent application number | Description | Published |
20110218240 | NOVEL COMPOUND WITH SPIRO CHIRAL CARBON BACKBONE, PREPARATION METHOD THEREOF, AND PHARMACEUTICAL COMPOSITION CONTAINING THE SAME - Provided are a novel compound with a spiro chiral carbon backbone, a stereoisomer thereof, an enantiomer thereof, an in vivo hydrolysable precursor thereof, or a pharmaceutically acceptable salt thereof. The novel compound with the spiro chiral carbon backbone has excellent osteoblast differentiation activity, mast cell inhibitory activity, and fatty acid synthesis inhibitory activity in the liver. Therefore, the novel compound can be expected to play an innovative role in treatment of osteoporosis, fatty liver, and obesity. | 09-08-2011 |
20120170947 | APPARATUS AND METHOD FOR RECEIVING LIGHT USING MULTIPLE LIGHT RECEIVING SENSORS - In an apparatus and method for receiving light using multiple light receiving sensors, a light receiving apparatus includes a light receiving unit comprising multiple light receiving sensors to receive an optical signal; an analyzing unit to extract a highlighted area; a light receiving controlling unit to activate a first light receiving sensor corresponding to the highlighted area, and to determine the first light receiving sensor to be a part of a first sensor group; and a data processing unit to demodulate an optical signal received by the first sensor group into data. A method for receiving an optical signal including extracting a highlighted area; activating a light receiving sensor corresponding to the highlighted area; receiving light through the first light receiving sensor; grouping the first light receiving sensor into a first sensor group; and demodulating an optical signal received by the first sensor group into data. | 07-05-2012 |
20150035009 | FIN FIELD EFFECT TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE SAME AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE - A fin field effect transistor includes a first fin structure and a second fin structures both protruding from a substrate, first and second gate electrodes on the first and second fin structures, respectively, and a gate dielectric layer between each of the first and second fin structures and the first and second gate electrodes, respectively. Each of the first and second fin structures includes a buffer pattern on the substrate, a channel pattern on the buffer pattern, and an etch stop pattern provided between the channel pattern and the substrate. The etch stop pattern includes a material having an etch resistivity greater than that of the buffer pattern. | 02-05-2015 |
20150061719 | VERTICAL PROBE CARD FOR MICRO-BUMP PROBING - The present invention relates to a probe card, and more particularly a probe card that can provide fine pitch for micro-bump probing, can be manufactured at a low cost for a short time through a simple manufacturing process, and can have excellent electric characteristics because it can have the components and a thin film resistance therein. | 03-05-2015 |
20150137263 | SEMICONDUCTOR DEVICE HAVING FIN-TYPE FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A field effect transistor includes a fin structure, having a sidewall, protruding from a substrate, and a device isolation structure on the substrate, the device isolation structure defining the sidewall of the fin structure, wherein the fin structure includes a buffer semiconductor pattern disposed on the substrate and a channel pattern disposed on the buffer semiconductor pattern, wherein the buffer semiconductor pattern has a lattice constant different from that of the channel pattern, and wherein the device isolation structure includes a gap-fill insulating layer, and includes an oxidation blocking layer pattern disposed between the buffer semiconductor pattern and the gap-fill insulating layer. | 05-21-2015 |
20150249087 | SEMICONDUCTOR FIN DEVICES AND METHOD OF FARICATING THE SEMICONDUCTOR FIN DEVICES - A semiconductor device includes a substrate, an insulating layer disposed on the substrate and having a trench exposing a surface portion of the substrate, and a channel-forming structure comprising crystalline semiconductor material. The channel-forming structure has a lower portion located in the trench and fins extending upright on the lower portion, where the fins are spaced from each other and are each narrower than an opening of the trench, and the lower portion of the channel forming structure has a higher crystal defect density than the fins of the channel forming structure. | 09-03-2015 |
20150311286 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device may include a strain relaxed buffer layer provided on a substrate to contain silicon germanium, a semiconductor pattern provided on the strain relaxed buffer layer to include a source region, a drain region, and a channel region connecting the source region with the drain region, and a gate electrode enclosing the channel region and extending between the substrate and the channel region. The source and drain regions may contain germanium at a concentration of 30 at % or higher. | 10-29-2015 |
20160005864 | FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME - A MOSFET may be formed with a strain-inducing mismatch of lattice constants that improves carrier mobility. In exemplary embodiments a MOSFET includes a strain-inducing lattice constant mismatch that is not undermined by a recessing step. In some embodiments a source/drain pattern is grown without a recessing step, thereby avoiding problems associated with a recessing step. Alternatively, a recessing process may be performed in a way that does not expose top surfaces of a strain-relaxed buffer layer. A MOSFET device layer, such as a strain-relaxed buffer layer or a device isolation layer, is unaffected by a recessing step and, as a result, strain may be applied to a channel region without jeopardizing subsequent formation steps. | 01-07-2016 |