| Patent application number | Description | Published |
|---|
| 20090283908 | METAL LINE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate and a metal line forming region is formed in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer, and the diffusion layer has a multi-layered structure of an Ru layer, an Ru | 11-19-2009 |
| 20100019386 | ELECTRICAL CONDUCTOR LINE HAVING A MULTILAYER DIFFUSION BARRIER FOR USE IN A SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - An electrical conductor having a multilayer diffusion barrier of use in a resultant semiconductor device is presented. The electrical conductor line includes an insulation layer, a diffusion barrier, and a metal line. The insulation layer is formed on a semiconductor substrate and having a metal line forming region. The diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and has a multi-layered structure made of TaN layer, an Mo | 01-28-2010 |
| 20100034835 | USE OF INHIBITORS OF LEUKOTRIENE B4 RECEPTOR BLT2 FOR TREATING ASTHMA - The present invention relates to a new use of inhibitors of leukotriene B4 receptor BLT2 for treating asthma. More particularly, the present invention relates to a pharmaceutical composition for treating asthma comprising BLT2 inhibitors and a method for treating asthma using BLT2 inhibitors. | 02-11-2010 |
| 20100052167 | METAL LINE HAVING A MOxSiy/Mo DIFFUSION BARRIER OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A metal line having a Mo | 03-04-2010 |
| 20100166982 | METAL LINE OF SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER AND METHOD FOR FORMING THE SAME - A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a stack structure including an Mo | 07-01-2010 |
| 20100238380 | BACKLIGHT UNIT AND DISPLAY APPARATUS HAVING THE SAME - Disclosed are a backlight unit and a display apparatus having the same. The backlight unit comprises a light guide plate receiving light and outputting the light, a light emitting unit comprised at an one end portion of the light guide plate, a fixing frame comprising an opened interior, in which the light emitting unit and the light guide plate are comprised in the opened interior, and a reflection frame comprised at an outer side of the fixing frame and reflecting leaked light. | 09-23-2010 |
| 20100244253 | COPPER LINE HAVING SELF-ASSEMBLED MONOLAYER FOR ULSI SEMICONDUCTOR DEVICES, AND A METHOD OF FORMING SAME - A copper line having self assembled monolayer for use in ULSI semiconductor devices and methods of making the same are presented. The copper line includes an interlayer dielectric, a self-assembled monolayer, catalytic particles on the monolayer, and a copper layer on the monolayer with the catalytic particles. The method includes the steps of forming an interlayer dielectric on a semiconductor substrate having a metal line forming region; forming a self-assembled monolayer on the metal line forming region; adsorbing catalytic particles on the self-assembled monolayer; forming using an electroless process a copper seed layer on the self-assembled monolayer having the catalytic particles adsorbed thereto; and forming a copper layer on the copper seed layer to fill in the metal line forming region. | 09-30-2010 |
| 20110057316 | COPPER WIRING LINE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A copper wiring of a semiconductor device is which is resistant to unwanted diffusion of copper from away from the copper wiring is presented. The copper wiring includes an interlayer dielectric, a self-assembly monolayer, a plurality of catalyst particles, a metal layer, and a copper layer. The interlayer dielectric on the semiconductor substrate has a wiring forming region. The self-assembly monolayer is the wiring forming region. The plurality of catalyst particles are adsorbed onto the surface of the self-assembly monolayer. The metal layer is formed on the self-assembly monolayer which has the adsorbed catalyst particles such that the metal layer serves as both a seed layer and as a diffusion barrier. The copper layer substantially fills in the wiring forming region. | 03-10-2011 |
