| Patent application number | Description | Published |
| 20090057700 | Light emitting element and a manufacturing method thereof - A light emitting element and a method for manufacturing the same are disclosed. In accordance with the element and the method, the dielectric thin film including the embossed pattern partially covering the sapphire substrate prevents damage of a sapphire substrate that occurs during a texturing of the sapphire substrate and a defect of an epitaxial thin film formed in a subsequent process. | 03-05-2009 |
| 20090195072 | Auto Power Controller of External Equipment on Valid Check - The present invention relates to a power controller for at least one piece of external equipment, the power controller being connected to the external equipment. The power controller includes a main unit ( | 08-06-2009 |
| 20090261345 | METHOD FOR MANUFACTURING COMPLIANT SUBSTRATE, COMPLIANT SUBSTRATE MANUFACTURED THEREBY, GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR DEVICE HAVING THE COMPLIANT SUBSTRATE AND MANUFACTURING METHOD THEREOF - A compliant substrate having a reduced stress, a method for manufacturing the same having a reduced manufacturing time, a gallium nitride based compound semiconductor device including the compliant substrate and a method for manufacturing the same are disclosed. The compliant substrate is manufactured by heating a substrate and a group III metal including at least one of an aluminum, a gallium and an indium, and a chloride based compound generated by introducing a HCl gas to the melted group III metal reacts with a NH | 10-22-2009 |
| 20100270528 | RESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD OF SAME - Disclosed are a resistive random access memory device (ReRAM) and a method for manufacturing the same. The ReRAM includes a cell array including a metal oxide nanowire formed inside a micropore array of a porous template, a first electrode electrically connected to an upper protrusion of the metal oxide nanowire, the upper protrusion being exposed to an upper portion of the porous template, and located in an upper portion of the cell array, and a second electrode electrically connected to a lower protrusion of the metal oxide nanowire, the lower protrusion being exposed to a lower portion of the porous template, and located in a lower portion of the cell array. | 10-28-2010 |
| 20110102009 | TEST SOCKET ELECTRICAL CONNECTOR, AND METHOD FOR MANUFACTURING THE TEST SOCKET - A test socket, an electrical connector, and a method for manufacturing the test socket. In detail, the test socket for electrically connecting terminals of a semiconductor device to pads of a test apparatus includes: a housing having through-holes vertically extending to correspond in position to the terminals of the semiconductor device; contact pins disposed to correspond in position to the through-holes of the housing and contacting the terminals of the semiconductor device; and elastic members connected to the contact pins in the through-holes of the housing to contract and expand, wherein the elastic members are adhered to the contact pins by using an adhesive material. | 05-05-2011 |
| 20110121850 | SPRING STRUCTURE AND TEST SOCKET USING THEREOF - Spring assemblies and a test socket using the spring assemblies. The spring assemblies are used in a test socket electrically connecting lead terminals of a semiconductor chip to test terminals of a test device by contacting the lead terminals and the test terminals, and include: first springs in which a first steel wire having elasticity and conductivity is coiled in a spiral in one direction; and second springs in which a second steel wire having elasticity and conductivity is coiled in a spiral in an opposite direction to the direction in which the first springs are coiled, which have outer diameters narrower than inner diameters of the first springs, and are inserted into the first springs. Accordingly, electric resistances and inductances of two spring assemblies coiled in a spiral are reduced to improve electricity transmission characteristic. A height of a test socket is easily adjusted using spring assemblies having desired lengths. Also, since only plating is performed on the springs to form the spring assemblies, the spring assemblies are formed at a very low cost and have a wide range of applications. | 05-26-2011 |
| 20120091461 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor display substrate and a method of manufacturing the same are provided. The thin film transistor substrate includes a gate electrode formed on a display substrate, an active layer formed on the gate electrode to overlap with the gate electrode and including polycrystalline silicon, a first ohmic contact layer formed on the active layer, a second ohmic contact layer formed on the first ohmic contact layer, and a source electrode and a drain electrode each formed on the second ohmic contact layer. | 04-19-2012 |
| Patent application number | Description | Published |
| 20080218022 | Motor - A motor that reduces a cogging torque and rotates at a high speed is presented. The motor comprises: a shaft, a plurality of core blocks coupled to the shaft, a plurality of permanent magnets inserted into each of the core blocks, and an aligning unit, coaxial with the shaft, and disposed between the shaft and the core blocks. The core block includes a plurality of core sheets each having at least a pair of flux barriers formed to be symmetrical to each other about a line of symmetry. A first rib lies along the line of symmetry and a separate anti-deformation rib is positioned within each of the pair of flux barriers. Accordingly, a skew process for a rotor is facilitated. An anti-deformation rib within the flux barrier provides structural integrity for the core block. Accordingly, when the rotor is rotated with a high speed, a bridge is prevented from being deformed. | 09-11-2008 |
| 20080218025 | Self-magnetizing motor and compressor having the same - A self magnetizing motor and a compressor having the same is configured to require a lower starting voltage and to deliver superior performance. In the self magnetizing motor, a magnetic material on an exterior of the rotor is magnetized when power is supplied to a magnetizing unit of the stator. A plurality of conductive bars are inserted on the outer circumference of the rotor core. A spacing distance between outer portions of the conductive bars and inner circumference of the magnetizable material is longer than an air gap between the stator and the rotor. As a result, a magnetic strength of the magnetic material may be increased. | 09-11-2008 |
| 20080278108 | MOTOR AND METHOD FOR CONTROLLING OPERATION OF MOTOR - A self-magnetizing motor incorporates a control circuit that starts the motor, controls a magnetizing unit, and then operates the motor. The control circuit can include relay, such as a bi-directional conductive power semiconductor device, and one or more PTC (Positive Temperature Coefficient) switches. This control circuit eliminates the need for a separate controller and the implementation costs can be reduced. | 11-13-2008 |
| 20080290824 | APPARATUS AND METHOD FOR CONTROLLING OPERATION OF MOTOR - An apparatus for controlling a motor includes an inverter to convert a DC voltage into an AC voltage, a power selecting circuit to select external power or power from the inverter, and a controller to control operation of the power selecting circuit according to a load of the motor. | 11-27-2008 |
| 20080309281 | Starting Control Apparatus and Method for Motor - An exciting coil of a motor is formed to be controlled by using an analog timer to thus control an excitation control circuit of a motor control apparatus, whereby an excitation control circuit that excites an exciting coil of a motor control apparatus can be simplified and complexity can be reduced by simplifying a circuit construction of an excitation controller. The present invention includes: an auxiliary winding (sub-coil) and a main winding (main coil); and an exciting unit which is electrically connected with the auxiliary winding and the main winding, determines an excitation application time and an excitation time, and generates an excitation current according to the determined excitation application time and the excitation time. | 12-18-2008 |
| 20090108796 | Starting Control Apparatus and Method for Motor - An apparatus and method for controlling starting of a motor are disclosed. An exciting coil of a motor is excited by using a controller of an electronic refrigerator without having an extra excitation control circuit, to thereby simplify a component construction for controlling exciting of the motor and thus reduce complexity. The present invention includes: a main coil and an auxiliary coil (sub-coil); an exciting coil that generates an excitation current; a refrigerator control unit that outputs a control signal for controlling an application time of the excitation current when started; and a switch unit electrically connected with the exciting coil and supplying power to the exciting coil according to the control signal outputted from the refrigerator control unit. | 04-30-2009 |
| 20090160393 | Starting Control Apparatus and Method for Motor - Entry of a synchronous speed of a rotor can be facilitated by increasing a starting torque by adjusting a magnetization application time for magnetizing the rotor according to whether or not a starting capacitor is used. The present invention includes: a control unit that outputs a control signal for controlling an application time of a magnetizing current according to whether or not a starting capacitor is used; and a switch that supplies power to an exciting coil according to the control signal outputted from the control unit. | 06-25-2009 |
| Patent application number | Description | Published |
| 20090239369 | Method of Forming Electrical Interconnects within Insulating Layers that Form Consecutive Sidewalls - Methods of forming integrated circuit device having electrical interconnects include forming an electrically insulating layer on a substrate and forming a hard mask on the electrically insulating layer. The hard mask and the electrically insulating layer are selectively etched in sequence using a mask to define an opening therein. This opening, which may be a via hole, exposes inner sidewalls of the hard mask and the electrically insulating layer. The inner sidewall of the hard mask is then recessed relative to the inner sidewall of the electrically insulating layer and a sacrificial reaction layer is formed on the inner sidewall of the electrically insulating layer. This reaction layer operates to recess the inner sidewall of the electrically insulating layer. The reaction layer is then removed to define a wider opening having relatively uniform sidewalls. This wider opening is then filled with an electrical interconnect. | 09-24-2009 |
| 20090239374 | Methods of Forming Metal Interconnect Structures on Semiconductor Substrates Using Oxygen-Removing Plasmas and Interconnect Structures Formed Thereby - Methods of forming devices include forming a first electrically insulating layer having a metal interconnection therein, on a substrate and then forming a first electrically insulating barrier layer on an upper surface of the metal interconnection and on the first electrically insulating layer. The first electrically insulating barrier layer is exposed to a plasma that penetrates the first electrically insulating barrier and removes oxygen from an upper surface of the metal interconnection. The barrier layer may have a thickness in a range from about 5 Å to about 50 Å and the plasma may be a hydrogen-containing plasma that converts oxygen on the upper surface of the metal interconnection to water. | 09-24-2009 |
| 20090280637 | Method of manufacturing semiconductor device including ultra low dielectric constant layer - Provided is a method of manufacturing a semiconductor device. The method employs multi-step removal on a plurality of different porogens included in a low dielectric layer both before and after metal lines are formed, thereby facilitating formation of an ultra low dielectric constant layer which is used as an insulation layer between metal lines of a semiconductor device. The method may include forming an interlayer dielectric layer on a substrate, forming a plurality of porogens in the interlayer dielectric layer, removing a portion of the plurality of porogens in the interlayer dielectric layer to form a plurality of first pores in the interlayer dielectric layer, forming a wiring pattern where the plurality of first pores are formed, and removing the remaining porogens of the plurality of porogens to form a plurality of second pores in the interlayer dielectric layer. | 11-12-2009 |