| Patent application number | Description | Published |
|---|
| 20090042140 | ANTI-REFLECTIVE POLYMER, ANTI-REFLECTIVE COMPOSITION CONTAINING THE SAME, AND METHOD FOR FORMING PATTERN USING THE SAME - A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer for crosslinking is useful in an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process. | 02-12-2009 |
| 20090042141 | ANTI-REFLECTIVE POLYMER, ANTI-REFLECTIVE COMPOSITION CONTAINING THE SAME, AND METHOD FOR FORMING PATTERN USING THE SAME - A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer is useful in a damascene process and an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process. | 02-12-2009 |
| 20090191709 | Method for Manufacturing a Semiconductor Device - A polymer for immersion lithography comprising a repeating unit represented by Formula 1 and a photoresist composition containing the same. A photoresist film formed by the photoresist composition of the invention is highly resistant to dissolution, a photoacid generator in an aqueous solution for immersion lithography, thereby preventing contamination of an exposure lens and deformation of the photoresist pattern by exposure. | 07-30-2009 |
| 20090258498 | Method for Manufacturing a Semiconductor Device - A method for manufacturing a semiconductor device using a photoresist polymer comprising a fluorine component, a photoresist composition containing the photoresist polymer and an organic solvent to reduce surface tension, by forming a photoresist film uniformly on the whole surface of an underlying layer pattern to allow a subsequent ion-implanting process to be stably performed. | 10-15-2009 |
| 20090298291 | METHOD FOR FORMING A PATTERN OF A SEMICONDUCTOR DEVICE - In a method for forming a pattern of a semiconductor device, an ultra fine pattern is formed using a spacer patterning technology to overcome resolution limits of an exposer. A silicon-containing resist enhancement lithography assisted by a chemical shrink (RELACS) layer is formed with a spin-con-coating method in a track apparatus over a photoresist pattern. As a result, a cross-linking reaction is generated between the RELACS layer and the photoresist patterns to form the spacer, and the spacer is used as a mask in the patterning process. | 12-03-2009 |
| 20100173249 | Method for Manufacturing a Semiconductor Device - Disclosed herein is a composition for removing an immersion lithography solution. The composition includes an organic solvent and an acid compound. Also disclosed is a method for manufacturing a semiconductor device including an immersion lithography process. When a photoresist pattern is formed by the immersion lithography process, an exposure process is performed on a photoresist film formed over an underlying layer with an immersion lithography exposer. Then, the composition is dripped over the wafer to remove residual immersion lithography solution on the photoresist film, thereby improving a water mark defect phenomenon. | 07-08-2010 |
| 20100176492 | Method for Forming a Pattern on a Semiconductor Using an Organic Hard Mask - A composition for the organic hard mask includes a polyamic acid compound, and a method for forming a pattern is used in a manufacturing process of semiconductor devices by coating the composition for organic hard mask film on an underlying layer, and depositing a second hard mask film with a silicon nitride SiON film thereon to form a double hard mask film having an excellent etching selectivity, thereby obtaining a uniform pattern. | 07-15-2010 |
