Patent application number | Description | Published |
20080215344 | METHOD AND APPARATUS FOR EXPANDING BANDWIDTH OF VOICE SIGNAL - A method and apparatus for expanding a bandwidth of an input narrowband voice signal is provided. The narrowband voice signal is analyzed separately for each frame, and a Degree of Voicing (DV) and a Degree of Stationary (DS) are calculated depending on the analysis. A Degree of Difficulty of Bandwidth Expansion (DDBWE) of the narrowband voice signal is calculated based on DV and DS. Bandwidth expansion is controlled according to DDBWE. | 09-04-2008 |
20080249772 | APPARATUS AND METHOD FOR ENHANCING SPEECH INTELLIGIBILITY IN A MOBILE TERMINAL - An apparatus and a method for enhancing speech intelligibility in a mobile terminal. A complex spectrum calculator calculates complex spectra of one input frame of an input speech signal by Fourier transform, a speech level calculator calculates its instant levels, an average speech level calculator calculates an average speech level of the speech frame using the instant levels, if the input frame is a speech frame, a scaling factor calculator calculates scaling factors by comparing the average speech level with the instant levels, an HPF characteristic calculator calculates amplitude characteristics using the scaling factors, a HPF high-pass-filters the complex spectra using the amplitude characteristics, a synthesizer converts high-pass-filtered signals to time signals by inverse Fourier transform and synthesizes the time signals, and a combiner outputs an enhanced intelligibility speech signal by combining the synthesized time signal with the input frame. | 10-09-2008 |
20090109964 | APPARATUS AND METHOD FOR PLAYOUT SCHEDULING IN VOICE OVER INTERNET PROTOCOL (VoIP) SYSTEM - A method and an apparatus for playout scheduling in a Voice over Internet Protocol (VoIP) system are provided. The method includes acquiring Pulse Code Modulation (PCM) samples by decoding a received packet; setting a first scale ratio according to a length of PCM samples stored in a playout buffer based on a preset scale ratio table; setting a second scale ratio by predicting a packet delay; setting a final scale ratio using the first scale ratio and the second scale ratio; and adjusting the length of the acquired PCM samples at the final scale ratio. | 04-30-2009 |
20090147964 | APPARATUS AND METHOD FOR REMOVING AN ECHO SIGNAL IN A SIGNAL TRANSMISSION/RECEPTION APPARATUS OF A COMMUNICATION SYSTEM - A method and apparatus for removing an echo signal in a signal transmission/reception apparatus of a communication system are provided. A signal transmission/reception apparatus determines an echo channel impulse response using a reception signal, generates an echo signal removing coefficient using the echo channel impulse response, removes an echo signal from the reception signal using the echo signal removing coefficient, and transmits a signal in which the echo signal is removed. | 06-11-2009 |
20090149130 | APPARATUS AND METHOD FOR REMOVING AN ECHO SIGNAL IN A SIGANL TRANSMISSION/RECEPTION APPARATUS OF A COMMUNICATION SYSTEM - A method and apparatus for removing an echo signal in a signal transmission/reception apparatus of a communication system is provided. A signal transmission/reception apparatus estimates an input channel response using a training sequence, generates a first signal by removing the input channel response from a first reception signal, detects an echo channel impulse response using the first signal, detects an echo signal removing coefficient using the echo channel impulse response, generates a second signal in which an echo signal is removed by applying the echo signal removing coefficient to a second reception signal, and removes the second signal from a third signal, wherein the first signal is received prior to receiving the second signal and the second signal is received prior to receiving the third signal. | 06-11-2009 |
20090162743 | Reserve Battery Having all Solid State Thin Film Battery - The present invention discloses a reserve battery having an all solid state thin film battery ( | 06-25-2009 |
20090215390 | METHOD AND APPARATUS FOR ESTIMATING/REMOVING ECHO SIGNAL USING CHANNEL COEFFICIENT PREDICTING TECHNIQUE IN MULTI-CARRIER SYSTEM - A method and an apparatus are provided for estimating and removing interference of a signal at a wireless repeater operating in a multi-carrier system. In the method, a current echo channel linear prediction coefficient, which represents a coefficient between a current train signal section and a previous train signal section, is estimated using a current echo channel coefficient estimated in the current train signal section and a previous echo channel coefficient generated in the previous train signal section. A next echo channel coefficient is estimated using the current echo channel coefficient, the previous echo channel coefficient, and the current echo channel linear prediction coefficient. An echo channel coefficient outside a train signal section is estimated using the current echo channel coefficient and the next echo channel coefficient. | 08-27-2009 |
20140061874 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - An exemplary semiconductor device comprises a through silicon via penetrating a semiconductor substrate including a circuit pattern on one side of the substrate, a first doped layer formed in the other side, and a bump connected with the through silicon via. | 03-06-2014 |
20140322904 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - An exemplary semiconductor device comprises a through silicon via penetrating a semiconductor substrate including a circuit pattern on one side of the substrate, a first doped layer formed in the other side , and a bump connected with the through silicon via. | 10-30-2014 |
20150028453 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device in which a gettering layer is formed in a semiconductor substrate, and a method for forming the same are disclosed, resulting in increased reliability of the semiconductor substrate including the gettering layer. The semiconductor device includes a semiconductor substrate; a gettering layer formed of a first-type impurity and a second-type impurity in the semiconductor substrate so as to perform gettering of metal ion; and a deep-well region formed over the gettering layer in the semiconductor substrate. | 01-29-2015 |