| Patent application number | Description | Published |
|---|
| 20080241377 | VAPOR DEPOSITION SYSTEM AND METHOD OF OPERATING - A method and system for depositing a thin film on a substrate using a vapor deposition process is described. The processing system comprises a process chamber having a pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, and a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate. Furthermore, a heat source is coupled to the gas distribution system, wherein the heat source comprises one or more heating elements coupled to a power source, and wherein the one or more heating elements are disposed on an interior surface of the gas distribution system or embedded within the gas distribution system or both, and configured to interact with the firm forming composition and cause pyrolysis of one or more constituents of the film forming composition when heated. | 10-02-2008 |
| 20090321247 | IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS - A method is provided of operating a deposition system to deposit coating material into high aspect ratio nano-sized features on a patterned substrate that enhances sidewall coverage compared to field area and bottom surface coverage while minimizing or eliminating overhang. The method includes performing a process step with a gross field area deposition rate of about 25 to 70 nm/min and simultaneously etching the barrier layer to establish a net field area deposition rate of about 5 to 40 nm/min. The method may also include first performing a protective layer deposition step with a field area deposition rate of about 5 to 20 nm/min without etching the underlying surface then performing a surface modification step with gross deposition and simultaneous etching at a field modification net deposition rate of about −10 to +40 nm/min. | 12-31-2009 |
| 20100065758 | DIELECTRIC MATERIAL TREATMENT SYSTEM AND METHOD OF OPERATING - A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation. | 03-18-2010 |
| 20100065759 | DIELECTRIC TREATMENT MODULE USING SCANNING IR RADIATION SOURCE - A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation. | 03-18-2010 |
| 20100067886 | IR LASER OPTICS SYSTEM FOR DIELECTRIC TREATMENT MODULE - A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation. | 03-18-2010 |
| 20100068897 | DIELECTRIC TREATMENT PLATFORM FOR DIELECTRIC FILM DEPOSITION AND CURING - A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation. | 03-18-2010 |
| 20100247803 | Chemical vapor deposition method - A chemical vapor deposition (CVD) method for depositing a thin film on a surface of a substrate is described. The CVD method comprises disposing a substrate on a substrate holder in a process chamber, and introducing a process gas to the process chamber, wherein the process gas comprises a chemical precursor. The process gas is exposed to a non-ionizing heat source separate from the substrate holder to cause decomposition of the chemical precursor. A thin film is deposited upon the substrate. | 09-30-2010 |
| 20110061595 | High temperature gas heating device for a vapor deposition system - A gas heating device that may be used in a system for depositing a thin film on a substrate using a vapor deposition process is described. The gas heating device may be configured for heating one or more constituents of a film forming composition. The gas heating device comprises one or more resistive heating elements. Additionally, the gas heating device comprises a mounting structure configured to support at least one of the one or more resistive heating elements. Furthermore, the gas heating device comprises a static mounting device coupled to the mounting structure and configured to fixedly couple the at least one of the one or more resistive heating elements to the mounting structure, and a dynamic mounting device coupled to the mounting structure and configured to automatically compensate for changes in a length of the at least one of the one or more resistive heating elements. Further yet, the dynamic mounting device comprises a thermal break configured to reduce heat transfer between the dynamic mounting device and the mounting structure. | 03-17-2011 |
| 20110126762 | VAPOR DEPOSITION SYSTEM - A system for depositing a thin film on a substrate using a vapor deposition process is described. The deposition system includes a process chamber having a vacuum pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate, a gas distribution system coupled to the process chamber and configured to introduce a film forming composition to a process space in the vicinity of a surface of the substrate, a non-ionizing heat source separate from the substrate holder that is configured to receive a flow of the film forming composition and to cause thermal fragmentation of one or more constituents of the film forming composition when heated, and one or more power sources coupled to the heating element array and configured to provide an electrical signal to the at least one heating element zone. The deposition system further includes a remote source coupled to the process chamber and configured to supply a reactive composition to the process chamber to chemically interact with the substrate, wherein the remote source comprises a remote plasma generator, a remote radical generator, a remote ozone generator, or a water vapor generator, or a combination of two or more thereof. | 06-02-2011 |
| 20110135842 | METHOD AND SYSTEM FOR PERFORMING DIFFERENT DEPOSITION PROCESSES WITHIN A SINGLE CHAMBER - A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space. | 06-09-2011 |
