Patent application number | Description | Published |
20080197411 | MOS TRANSISTOR DEVICE IN COMMON SOURCE CONFIGURATION - A semiconductor device includes a semiconductor substrate, a first p-channel laterally diffused metal oxide semiconductor (LDMOS) transistor formed over the semiconductor substrate and additional p-channel LDMOS transistors formed over the semiconductor substrate. First drain and gate electrodes are formed over the substrate and are coupled to the first LDMOS transistor. Additional drain and gate electrodes are formed over the substrate and are coupled to the second LDMOS transistor. A common source electrode for the first and second LDMOS transistors is also formed over the substrate. | 08-21-2008 |
20080246086 | SEMICONDUCTOR DEVICES HAVING CHARGE BALANCED STRUCTURE - A laterally diffused metal-oxide-semiconductor transistor device includes a substrate having a first conductivity type with a semiconductor layer formed over the substrate. A source region and a drain extension region of the first conductivity type are formed in the semiconductor layer. A body region of a second conductivity type is formed in the semiconductor layer. A conductive gate is formed over a gate dielectric layer that is formed over a channel region. A drain contact electrically connects the drain extension region to the substrate and is laterally spaced from the channel region. The drain contact includes a highly-doped drain contact region formed between the substrate and the drain extension region in the semiconductor layer, wherein a topmost portion of the highly-doped drain contact region is spaced from the upper surface of the semiconductor layer. A source contact electrically connects the source region to the body region. | 10-09-2008 |
20100171543 | PACKAGED POWER SWITCHING DEVICE - A packaged switching device for power applications includes at least one pair of power MOSFET transistor dies connected between upper and lower power source rail leads, a high side one of the pair of MOSFET transistor dies being connected to the upper power source rail lead and a low side one of the pair of MOSFET transistor dies being connected to the lower power source rail lead. At least one of the MOSFET transistor dies is configured for vertical current flow therethrough and has a source electrode at a backside thereof. | 07-08-2010 |
20110148376 | MOSFET WITH GATE PULL-DOWN - A MOSFET main switch transistor has a pull-down FET coupled between a drain thereof and the gate of the main switch transistor. A gate of the pull-down FET is coupled to the drain of the main switch transistor by a capacitor and is connected to a source thereof by a resistor. The pull-down FET is operated by capacitive coupling to the voltage drop across the main switch and can be used to hold the gate of the main switch transistor at or near its source potential to avoid or reduce unintentional turn-on of the main switch transistor by the Miller effect. | 06-23-2011 |
20110148506 | INTEGRATION OF MOSFETS IN A SOURCE-DOWN CONFIGURATION - An output stage for a switched mode power supply has a high-side switch having a first power FET and a first speed-up FET monolithically integrated onto a first die. A low-side switch has a second power FET and a second speed-up FET monolithically integrated onto a second die. A semiconductor device has the power FET and the speed-up FET monolithically integrated in a “source-down” configuration. A method of operating an output stage of a switched mode power supply alternately turns on and off a high-side and a low-side switch and drives at least one of the switches with a speed-up FET monolithically integrated with the switch. | 06-23-2011 |
20120012982 | CAPACITORS AND METHODS OF FORMING - Capacitors and methods of forming semiconductor device capacitors are disclosed. Trenches are formed to define a capacitor bottom plate in a doped upper region of a semiconductor substrate, a dielectric layer is formed conformally over the substrate within the trenches, and a polysilicon layer is formed over the dielectric layer to define a capacitor top plate. A guard ring region of opposite conductivity and peripheral recessed areas may be added to avoid electric field crowding. A central substrate of lower doping concentration may be provided to provide a resistor in series below the capacitor bottom plate. A series resistor may also be provided in a resistivity region of the polysilicon layer laterally extending from the trenched area region. Contact for the capacitor bottom plate may be made through a contact layer formed on a bottom of the substrate. A top contact may be formed laterally spaced from the trenched area by patterning laterally extended portions of one or more of the dielectric, polysilicon and top metal contact layers. | 01-19-2012 |
20130009253 | POWER MOSFET WITH INTEGRATED GATE RESISTOR AND DIODE-CONNECTED MOSFET - A power MOSFET is formed in a semiconductor device with a parallel combination of a shunt resistor and a diode-connected MOSFET between a gate input node of the semiconductor device and a gate of the power MOSFET. A gate of the diode-connected MOSFET is connected to the gate of the power MOSFET. Source and drain nodes of the diode-connected MOSFET are connected to a source node of the power MOSFET through diodes. The drain node of the diode-connected MOSFET is connected to the gate input node of the semiconductor device. The source node of the diode-connected MOSFET is connected to the gate of the power MOSFET. The power MOSFET and the diode-connected MOSFET are integrated into the substrate of the semiconductor device so that the diode-connected MOSFET source and drain nodes are electrically isolated from the power MOSFET source node through a pn junction. | 01-10-2013 |
20140001855 | MOS TRANSISTOR DEVICE IN COMMON SOURCE CONFIGURATION | 01-02-2014 |
20140034999 | POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE - A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well. | 02-06-2014 |
20140035032 | POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE - A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well. | 02-06-2014 |
20140035047 | POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE - A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well. | 02-06-2014 |
20140035102 | POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE - A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well. | 02-06-2014 |
20140070265 | FAST SWITCHING IGBT WITH EMBEDDED EMITTER SHORTING CONTACTS AND METHOD FOR MAKING SAME - Integrated circuits are presented having high voltage IGBTs with integral emitter shorts and fabrication processes using wafer bonding or gown epitaxial silicon for controlled drift region thickness and fast switching speed. | 03-13-2014 |
20140183622 | SCHOTTKY POWER MOSFET - A semiconductor device containing a vertical power MOSFET with a planar gate and an integrated Schottky diode is formed by forming a source electrode on an extended drain of the vertical power MOSFET to form the Schottky diode and forming the source electrode on a source region of the vertical power MOSFET. The Schottky diode is connected through the source electrode to the source region. A drain electrode is formed at a bottom of a substrate of the semiconductor device. The Schottky diode is connected through the extended drain of the vertical power MOSFET to the drain electrode. | 07-03-2014 |
20140284701 | POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE - A MOSFET includes an active region formed on an SOI substrate. A buried well is formed in the active region. A drain region having the first conductivity type is formed in the active region and spaced laterally from a source region and the buried well. A body region is formed in the active region between the source and drain regions on the buried well, and a drift region is formed in the active region between the drain and body regions on at least a portion of the buried well. A shielding structure is formed proximate the upper surface of the active region, overlapping a gate. During conduction, the buried well forms a PN junction with the drift region which, in conjunction with the shielding structure, depletes the drift region. The MOSFET is configured to sustain a linear mode of operation of an inversion channel formed under the gate. | 09-25-2014 |
20140291762 | POWER DEVICE INTEGRATION ON A COMMON SUBSTRATE - A semiconductor structure for facilitating an integration of power devices on a common substrate includes a first insulating layer formed on the substrate and an active region having a first conductivity type formed on at least a portion of the first insulating layer. A first terminal is formed on an upper surface of the structure and electrically connects with at least one other region having the first conductivity type formed in the active region. A buried well having a second conductivity type is formed in the active region and is coupled with a second terminal formed on the upper surface of the structure. The buried well and the active region form a clamping diode which positions a breakdown avalanche region between the buried well and the first terminal. A breakdown voltage of at least one of the power devices is a function of characteristics of the buried well. | 10-02-2014 |