| Patent application number | Description | Published |
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| 20100001629 | Arrays of microcavity plasma devices and electrodes with reduced mechanical stress - A preferred embodiment low stress electrode and a preferred array of microcavity plasma devices of the invention include a plurality of thin metal first electrodes and stress reduction structures and/or geometries designed to promote the flatness during and after processing. The first electrodes are buried in a thin metal oxide layer which protects the electrodes from the plasma in the microcavities. In embodiments of the invention, some or all of the electrodes are connected. Patterns of connections in a one- or two-dimensional array of microcavities can be defined. In preferred embodiments, the first electrodes comprise circumferential electrodes that surround individual microcavities. A second thin layer having a buried, second electrode is bonded to the first thin layer. A packaging layer, e.g., a thin glass or plastic layer, seals the discharge medium (a gas or vapor, or a combination of the two) into the microcavities. In a preferred methods of formation of arrays of microcavity plasma devices or electrodes, a thin metal foil or film is symmetrically anodized and formed with a stress reduction geometry and/or structures. | 01-07-2010 |
| 20100072893 | ELLIPSOIDAL MICROCAVITY PLASMA DEVICES AND POWDER BLASTING FORMATION - The invention provides microcavity plasma devices and arrays that are formed in layers that also seal the plasma medium, i.e., gas(es) and/or vapors. No separate packaging layers are required and additional packaging can be omitted if it is desirable to do so. A preferred microcavity plasma device includes first and second thin layers that are joined together. A half ellipsoid microcavity or plurality of half ellipsoid microcavities is defined in one or both of the first and second thin layers, and electrodes are arranged with respect to the microcavity to excite a plasma within said microcavities upon application of a predetermined voltage to the electrodes. A method for forming a microcavity plasma device having a plurality of half or full ellipsoid microcavities in one or both of first and second thin layers is also provided by a preferred embodiment. The method includes defining a pattern of protective polymer on the first thin layer. Powder blasting forms half ellipsoid microcavities in the first thin layer. The second thin layer is joined to the first layer. The patterning can be conducted lithographically or can be conduced with a simple screen. | 03-25-2010 |
| 20100289413 | ELECTRON INJECTION-CONTROLLED MICROCAVITY PLASMA DEVICE AND ARRAYS - An embodiment of the invention is a microcavity plasma device that can be controlled by a low voltage electron emitter. The microcavity plasma device includes driving electrodes disposed proximate to a microcavity and arranged to contribute to generation of plasma in the microcavity upon application of a driving voltage. An electron emitter is arranged to emit electrons into the microcavity upon application of a control voltage. The electron emitter is an electron source having an insulator layer defining a tunneling region. The microplasma itself can serve as a second electrode necessary to energize the electron emitter. While a voltage comparable to previous microcavity plasma devices is still imposed across the microcavity plasma devices, control of the devices can be accomplished at high speeds and with a small voltage, e.g., about 5V to 30V in preferred embodiments. | 11-18-2010 |
| 20100296978 | MICROCHANNEL LASER HAVING MICROPLASMA GAIN MEDIA - The invention provides microchannel lasers having a microplasma gain medium. Lasers of the invention can be formed in semiconductor materials, and can also be formed in polymer materials. In a microlaser of the invention, high density plasmas are produced in microchannels. The microplasma acts as a gain medium with the electrodes sustaining the plasma in the microchannel. Reflectors are used with the microchannel for obtaining optical feedback to obtain lasing in the microplasma gain medium in devices of the invention for a wide range of atomic and molecular species. Several atomic and molecular gain media will produce sufficiently high gain coefficients that reflectors (mirrors) are not necessary. Microlasers of the invention are based on microplasma generation in channels of various geometries. Preferred embodiment microlaser designs can be fabricated in semiconductor materials, such as Si wafers, by standard photolithographic techniques, or in polymers by replica molding. | 11-25-2010 |
| 20110037102 | HYBRID PLASMA-SEMICONDUCTOR OPTOELECTRONIC DEVICES AND TRANSISTORS - The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices. | 02-17-2011 |
| 20110109224 | MICROCAVITY PLASMA DEVICES WITH NON-UNIFORM CROSS-SECTION MICROCAVITIES - An embodiment of the invention IS an array of microcavity plasma devices The array includes a first metal film electrode with a plurality of non-uniform cross-section microcavities therein that are encapsulated in oxide A second electrode is a thin metal foil encapsulated in oxide that is bonded to the first electrode A packaging layer contains gas or vapor in the non-uniform cross-section microcavities To make such device, photoresist is patterned to encapsulate the anodized foil or film except on a top surface at desired positions of microcavities A second anodization or electrochemical etching is conducted to form the non-uniform cross-section sidewall microcavities cavities After removing photoresist and metal oxide, a final anodization lines the walls of the microcavities with metal oxide and fully encapsulates the metal electrodes with metal oxide | 05-12-2011 |
| 20110140073 | SEMICONDUCTING MICROCAVITY AND MICROCHANNEL PLASMA DEVICES - Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions, separated by a microcavity or microchannel and powered by alternate half-cycles of a time-varying voltage waveform. Alternate embodiments have a single pn junction. Microplasma is produced throughout the cavity between single or multiple pn junctions and a dielectric layer isolates the microplasma from the single or multiple pn junctions. Additional preferred embodiments are devices in which the spatial extent of the plasma itself or the n or p regions associated with a pn junction are altered by a third (control) electrode. | 06-16-2011 |
| 20110148282 | VARIABLE ELECTRIC FIELD STRENGTH METAL AND METAL OXIDE MICROPLASMA LAMPS AND FABRICATION - Preferred embodiments of the invention provide microcavity plasma lamps having a plurality of metal and metal oxide layers defining a plurality of arrays of microcavities and encapsulated thin metal electrodes. Packaging encloses the plurality of metal and metal oxide layers in plasma medium. The metal and metal oxide layers are configured and arranged to vary the electric field strength and total gas pressure (E/p) in the lamp. The invention also provides methods of manufacturing a microcavity plasma lamp that simultaneously evacuate the volume within the packaging and a volume surrounding the packaging to maintain an insignificant or zero pressure differential across the packaging. The packaging is backfilled with a plasma medium while also maintaining an insignificant or zero pressure differential across the packaging. | 06-23-2011 |
