Patent application number | Description | Published |
20100001629 | Arrays of microcavity plasma devices and electrodes with reduced mechanical stress - A preferred embodiment low stress electrode and a preferred array of microcavity plasma devices of the invention include a plurality of thin metal first electrodes and stress reduction structures and/or geometries designed to promote the flatness during and after processing. The first electrodes are buried in a thin metal oxide layer which protects the electrodes from the plasma in the microcavities. In embodiments of the invention, some or all of the electrodes are connected. Patterns of connections in a one- or two-dimensional array of microcavities can be defined. In preferred embodiments, the first electrodes comprise circumferential electrodes that surround individual microcavities. A second thin layer having a buried, second electrode is bonded to the first thin layer. A packaging layer, e.g., a thin glass or plastic layer, seals the discharge medium (a gas or vapor, or a combination of the two) into the microcavities. In a preferred methods of formation of arrays of microcavity plasma devices or electrodes, a thin metal foil or film is symmetrically anodized and formed with a stress reduction geometry and/or structures. | 01-07-2010 |
20100072893 | ELLIPSOIDAL MICROCAVITY PLASMA DEVICES AND POWDER BLASTING FORMATION - The invention provides microcavity plasma devices and arrays that are formed in layers that also seal the plasma medium, i.e., gas(es) and/or vapors. No separate packaging layers are required and additional packaging can be omitted if it is desirable to do so. A preferred microcavity plasma device includes first and second thin layers that are joined together. A half ellipsoid microcavity or plurality of half ellipsoid microcavities is defined in one or both of the first and second thin layers, and electrodes are arranged with respect to the microcavity to excite a plasma within said microcavities upon application of a predetermined voltage to the electrodes. A method for forming a microcavity plasma device having a plurality of half or full ellipsoid microcavities in one or both of first and second thin layers is also provided by a preferred embodiment. The method includes defining a pattern of protective polymer on the first thin layer. Powder blasting forms half ellipsoid microcavities in the first thin layer. The second thin layer is joined to the first layer. The patterning can be conducted lithographically or can be conduced with a simple screen. | 03-25-2010 |
20100289413 | ELECTRON INJECTION-CONTROLLED MICROCAVITY PLASMA DEVICE AND ARRAYS - An embodiment of the invention is a microcavity plasma device that can be controlled by a low voltage electron emitter. The microcavity plasma device includes driving electrodes disposed proximate to a microcavity and arranged to contribute to generation of plasma in the microcavity upon application of a driving voltage. An electron emitter is arranged to emit electrons into the microcavity upon application of a control voltage. The electron emitter is an electron source having an insulator layer defining a tunneling region. The microplasma itself can serve as a second electrode necessary to energize the electron emitter. While a voltage comparable to previous microcavity plasma devices is still imposed across the microcavity plasma devices, control of the devices can be accomplished at high speeds and with a small voltage, e.g., about 5V to 30V in preferred embodiments. | 11-18-2010 |
20100296978 | MICROCHANNEL LASER HAVING MICROPLASMA GAIN MEDIA - The invention provides microchannel lasers having a microplasma gain medium. Lasers of the invention can be formed in semiconductor materials, and can also be formed in polymer materials. In a microlaser of the invention, high density plasmas are produced in microchannels. The microplasma acts as a gain medium with the electrodes sustaining the plasma in the microchannel. Reflectors are used with the microchannel for obtaining optical feedback to obtain lasing in the microplasma gain medium in devices of the invention for a wide range of atomic and molecular species. Several atomic and molecular gain media will produce sufficiently high gain coefficients that reflectors (mirrors) are not necessary. Microlasers of the invention are based on microplasma generation in channels of various geometries. Preferred embodiment microlaser designs can be fabricated in semiconductor materials, such as Si wafers, by standard photolithographic techniques, or in polymers by replica molding. | 11-25-2010 |
20110037102 | HYBRID PLASMA-SEMICONDUCTOR OPTOELECTRONIC DEVICES AND TRANSISTORS - The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices. | 02-17-2011 |
20110109224 | MICROCAVITY PLASMA DEVICES WITH NON-UNIFORM CROSS-SECTION MICROCAVITIES - An embodiment of the invention IS an array of microcavity plasma devices The array includes a first metal film electrode with a plurality of non-uniform cross-section microcavities therein that are encapsulated in oxide A second electrode is a thin metal foil encapsulated in oxide that is bonded to the first electrode A packaging layer contains gas or vapor in the non-uniform cross-section microcavities To make such device, photoresist is patterned to encapsulate the anodized foil or film except on a top surface at desired positions of microcavities A second anodization or electrochemical etching is conducted to form the non-uniform cross-section sidewall microcavities cavities After removing photoresist and metal oxide, a final anodization lines the walls of the microcavities with metal oxide and fully encapsulates the metal electrodes with metal oxide | 05-12-2011 |
20110140073 | SEMICONDUCTING MICROCAVITY AND MICROCHANNEL PLASMA DEVICES - Preferred embodiments of the invention provide semiconducting microcavity plasma devices. Preferred embodiments of the invention are microcavity plasma devices having at least two pn junctions, separated by a microcavity or microchannel and powered by alternate half-cycles of a time-varying voltage waveform. Alternate embodiments have a single pn junction. Microplasma is produced throughout the cavity between single or multiple pn junctions and a dielectric layer isolates the microplasma from the single or multiple pn junctions. Additional preferred embodiments are devices in which the spatial extent of the plasma itself or the n or p regions associated with a pn junction are altered by a third (control) electrode. | 06-16-2011 |
20110148282 | VARIABLE ELECTRIC FIELD STRENGTH METAL AND METAL OXIDE MICROPLASMA LAMPS AND FABRICATION - Preferred embodiments of the invention provide microcavity plasma lamps having a plurality of metal and metal oxide layers defining a plurality of arrays of microcavities and encapsulated thin metal electrodes. Packaging encloses the plurality of metal and metal oxide layers in plasma medium. The metal and metal oxide layers are configured and arranged to vary the electric field strength and total gas pressure (E/p) in the lamp. The invention also provides methods of manufacturing a microcavity plasma lamp that simultaneously evacuate the volume within the packaging and a volume surrounding the packaging to maintain an insignificant or zero pressure differential across the packaging. The packaging is backfilled with a plasma medium while also maintaining an insignificant or zero pressure differential across the packaging. | 06-23-2011 |
20110181169 | MICROCAVITY AND MICROCHANNEL PLASMA DEVICE ARRAYS IN A SINGLE, UNITARY SHEET - An array of microcavity plasma devices is formed in a unitary sheet of oxide with embedded microcavities or microchannels and embedded metal driving electrodes isolated by oxide from the microcavities or microchannels and arranged so as to generate sustain a plasma in the embedded microcavities or microchannels upon application of time-varying voltage when a plasma medium is contained in the microcavities or microchannels. | 07-28-2011 |
20110260609 | INTERWOVEN WIRE MESH MICROCAVITY PLASMA ARRAYS - Embodiments of the invention provide for large arrays of microcavity plasma devices that can be made inexpensively, and can produce large area but thin displays or lighting sources Interwoven metal wire mesh, such as interwoven Al mesh, consists of two sets of wires which are interwoven in such a way that the two wire sets cross each other, typically at πght angles (90 degrees) although other patterns are also available Fabrication is accomplished with a simple and inexpensive wet chemical etching process The wires in each set are spaced from one another such that the finished mesh forms an array of openings that can be, for example, square, rectangular or diamond-shaped The size of the openings or microcavities is a function of the diameter of the wires in the mesh and the spacing between the wires in the mesh used to form the array of microcavity plasma devices. | 10-27-2011 |
20120025696 | PHOSPHOR COATING FOR IRREGULAR SURFACES AND METHOD FOR CREATING PHOSPHOR COATINGS - Microstructured, irregular surfaces pose special challenges but coatings of the invention can uniformly coat irregular and microstructured surfaces with one or more thin layers of phosphor. Preferred embodiment coatings are used in microcavity plasma devices and the substrate is, for example, a device electrode with a patterned and microstructured dielectric surface. A method for forming a thin encapsulated phosphor coating of the invention applies a uniform paste of metal or polymer layer to the substrate. In another embodiment, a low temperature melting point metal is deposited on the substrate. Polymer particles are deposited on a metal layer, or a mixture of a phosphor particles and a solvent are deposited onto the uniform glass, metal or polymer layer. Sequential soft and hard baking with temperatures controlled to drive off the solvent will then soften or melt the lowest melting point constituents of the glass, metal or polymer layer, partially or fully embed the phosphor particles into glass, polymer, or metal layers, which partially or fully encapsulate the phosphor particles and/or serve to anchor the particles to a surface. | 02-02-2012 |
20120074830 | ENCAPSULATED METAL MICROTIP MICROPLASMA DEVICES, ARRAYS AND FABRICATION METHODS - An embodiment of the invention is a microtip microplasma device having a first metal microtip opposing a second metal microtip with a gap therebetween. The first and second metal microtips are encapsulated in metal oxide that electrically isolates and physically connects the first and second metal microtips. In preferred devices, the first and second metal microtips and metal oxide comprise a monolithic, unitary structure. Arrays can be flexible, can be arranged in stacks, and can be formed into cylinders, for example, for gas and liquid processing devices, air filters and other applications. A preferred method of to forming an array of microtip microplasma devices provides a metal mesh with an array of micro openings therein. Electrode areas of the metal mesh are masked leaving planned connecting metal oxide areas of the metal mesh unmasked. Planned connecting metal oxide areas are electrochemically etched to convert the planned connecting metal oxide areas to metal oxide that encapsulates opposing metal microtips therein. The mask is removed. The electrode areas are electrochemically etched to encapsulate the electrode areas in metal oxide. | 03-29-2012 |
20120104554 | FLEXIBLE AND ON WAFER HYBRID PLASMA-SEMICONDUCTOR TRANSISTORS - Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). Doped solid state semiconductor regions are in a thin flexible solid state substrate, and a flexible non conducting material defining a microcavity adjacent the semiconductor regions. The flexible non conducting material is bonded to the thin flexible solid state substrate, and at least one electrode is arranged with respect to said flexible substrate to generate a plasma in said microcavity, where the plasma will influence or perform a semiconducting function in cooperation with said solid state semiconductor regions. A preferred on-wafer device is formed on a single side of a silicon on insulator wafer and defines the collector (plasma cavity), emitter and base regions on a common side, which provides a simplified and easy to manufacture structure. A preferred embodiment array of flexible hybrid plasma transistors of the invention is an n+pn PBJT fabricated between two flexible sheets. One or both of the flexible sheets is transparent. The overall array structure is planar, and the planarized structure is sealed between the two flexible sheets. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display. | 05-03-2012 |
20120178335 | METHOD TO MANUFACTURE REDUCED MECHANICAL STRESS ELECTRODES AND MICROCAVITY PLASMA DEVICE ARRAYS - In a preferred method of formation embodiment, a thin metal foil or film is obtained or formed with microcavities (such as through holes). The foil or film is anodized symmetrically so as to form a metal-oxide film on the surface of the foil and on the walls of the microcavities. One or more self-patterned metal electrodes are automatically formed and simultaneously buried in the metal oxide created by the anodization process. The electrodes form in a closed circumference around each microcavity, and electrodes for adjacent microcavities can be isolated or connected. If the microcavity is cylindrical, the electrodes form as rings around each cavity. | 07-12-2012 |
20130071297 | ARRAYS OF METAL AND METAL OXIDE MICROPLASMA DEVICES WITH DEFECT FREE OXIDE - A microplasma device includes a microcavity or microchannel defined at least partially within a thick metal oxide layer consisting essentially of defect free oxide. Electrodes are arranged with respect to the microcavity or microchannel to stimulate plasma generation in said microcavity or microchannel. At least one of the electrodes is encapsulated within the thick metal oxide layer. A method of fabricating a microcavity or microchannel plasma device includes anodizing a flat or gently curved or gently sloped metal substrate to form a thick layer of metal oxide consisting essentially of nanopores that are perpendicular to the surface of the metal substrate. Material removal is conducted to remove metal oxide material to form a microcavity or microchannel in the thick layer of metal oxide. | 03-21-2013 |
20130299909 | HYBRID PLASMA-SEMICONDUCTOR ELECTRONIC AND OPTICAL DEVICES - The invention provides combination semiconductor and plasma devices, including transistors and phototransistors. A preferred embodiment hybrid plasma semiconductor device has active solid state semiconductor regions; and a plasma generated in proximity to the active solid state semiconductor regions. Devices of the invention are referred to as hybrid plasma-semiconductor devices, in which a plasma, preferably a microplasma, cooperates with conventional solid state semiconductor device regions to influence or perform a semiconducting function, such as that provided by a transistor. The invention provides a family of hybrid plasma electronic/photonic devices having properties previously unavailable. In transistor devices of the invention, a low temperature, glow discharge is integral to the hybrid transistor. Example preferred devices include hybrid BJT and MOSFET devices. | 11-14-2013 |
20130337718 | ENCAPSULATED METAL MICROTIP MICROPLASMA DEVICE AND ARRAY FABRICATION METHODS - Methods of the invention can form microtip microplasma devices having the first and second metal microtips and metal oxide in a monolithic, unitary structure. Methods can form arrays that can be flexible, can be arranged in stacks, and can be formed into cylinders, for example, for gas and liquid processing devices, air filters and other applications. A preferred method of forming an array of microtip microplasma devices provides a metal mesh with an array of micro openings therein. Electrode areas of the metal mesh are masked leaving planned connecting metal oxide areas of the metal mesh unmasked. Planned connecting metal oxide areas are electrochemically etched to convert the planned connecting metal oxide areas to metal oxide that encapsulates opposing metal microtips therein. The mask is removed. The electrode areas are electrochemically etched to encapsulate the electrode areas in metal oxide. | 12-19-2013 |
20140265036 | POLYMER MICROCAVITY AND MICROCHANNEL DEVICE AND ARRAY FABRICATION METHOD - A method of forming a microplasma device places a curable polymer material between a mold having a negative volume impression of microcavities and/or microchannels and a substrate. The polymer is cured and then the mold is separated from the solid polymer. The method can form a microplasma device that includes a substrate and either or both of a microchannel or microcavity defined in a polymer layer supported by the substrate. Electrodes arranged with respect to the polymer material can excite plasma in a discharge medium contained in the microchannel or the microcavity or both. A flexible mold is preferably used to fabricate transparent polymer microcavities onto rigid substrates. A rigid mold is preferably used to fabricate transparent polymer microcavities onto flexible substrates. Having one of the mold and the substrate flexible and the other rigid aids in the separation of the mold from the cured polymer. | 09-18-2014 |
20140319654 | FLEXIBLE AND ON WAFER HYBRID PLASMA-SEMICONDUCTOR TRANSISTORS - Preferred embodiment flexible and on wafer hybrid plasma semiconductor devices have at least one active solid state semiconductor region; and a plasma generated in proximity to the active solid state semiconductor region(s). A preferred device is a hybrid plasma semiconductor device having base, emitting and microcavity collector regions formed on a single side of a device layer. Visible or ultraviolet light is emitted during operation by plasma collectors in the array. In preferred embodiments, individual PBJTs in the array serve as sub-pixels of a full-color display. | 10-30-2014 |
20140339677 | HYBRID PLASMA-SEMICONDUCTOR TRANSISTORS, LOGIC DEVICES AND ARRAYS - A hybrid plasma semiconductor device has a thin and flexible semiconductor base layer. An emitter region is diffused into the base layer forming a pn-junction. An insulator layer is upon one side the base layer and emitter region. Base and emitter electrodes are isolated from each other by the insulator layer and electrically contact the base layer and emitter region through the insulator layer. A thin and flexible collector layer is upon an opposite side of the base layer. A microcavity is formed in the collector layer and is aligned with the emitter region. Collector electrodes are arranged to sustain a microplasma within the microcavity with application of voltage to the collector electrodes. A depth of the emitter region and a thickness of the base layer are set to define a predetermined thin portion of the base layer as a base region between the emitter region and the microcavity. Microplasma generated in the microcavity serves as a collector. Logic devices are provided in multiple sub collector and sub emitter microplasma devices formed in thin and flexible or not flexible semiconductor materials. | 11-20-2014 |
20150008825 | MICROPLASMA JET DEVICES, ARRAYS, MEDICAL DEVICES AND METHODS - Preferred embodiments of the present invention include microplasma jet devices and arrays in various materials, and low temperature microplasma jet devices and arrays. These include preferred embodiment single microplasma jet devices and arrays of devices formed in monolithic polymer blocks with elongated microcavities. The arrays can be densely packed, for example having 100 jets in an area of a few square centimeters. Additional embodiments include metal/metal oxide microplasma jet devices that have micronozzles defined in the metal oxide itself. Methods of fabrication of microplasma jet devices are also provided by the invention, and the methods have been demonstrated as being capable of producing tailored micronozzle contours that are unitary with the material insulating electrodes. | 01-08-2015 |