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Izumi, Yokohama-Shi
Atsushi Izumi, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20080206548 | Benzoxazole Resin Precursor, Polybenzoxazole Resin, Resin Film And Semiconductor Device - A benzoxazole resin precursor comprising a first repeating unit which is obtained by the reaction of a bisaminophenol compound and a dicarboxylic acid compound, at least one of which has the diamondoid structure; a benzoxazole resin precursor further comprising a second repeating unit which is obtained by the reaction of a bisaminophenol compound having no diamondoid structure and a dicarboxylic acid compound having no diamondoid structure; a polybenzoxazole resin obtained by the ring-closing reaction with dehydration of the above benzoxazole resin precursor; a resin film constituted with the benzoxazole resin precursor or the polybenzoxazole resin. A polybenzoxazole resin and a resin film having excellent heat resistance and a small permittivity and a semiconductor device using the resin film can be obtained from the benzoxazole resin precursor. | 08-28-2008 |
Itaru Izumi, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20120038506 | ELECTRONIC SCANNING RADAR APPARATUS, RECEIVED WAVE DIRECTION ESTIMATING METHOD, AND RECEIVED WAVE DIRECTION ESTIMATION PROGRAM - In an electronic scanning radar apparatus, a receiving unit includes a plurality of antennas receiving a reflected wave arriving from a target having reflected a transmitted wave as a received wave. A beat signal generating unit generates beat signals from the transmitted wave and the received wave. A frequency resolving unit resolves the beat signals in beat frequencies having a predetermined frequency bandwidth and calculates complex data based on the resolved beat signals for each beat frequency. An azimuth calculating unit estimates an order of a normal equation used to calculate a DOA of the received wave on the basis of eigenvalues of a primary order matrix having complex data calculated from the beat signals as elements, creates a secondary order normal equation based on the estimated order, and calculates the DOA of the received wave based on the created secondary order normal equation. | 02-16-2012 |
Mitsuhiro Izumi, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110096207 | IMAGING APPARATUS AND METHOD FOR CONTROLLING SAME - Light transmitted through the imaging lens | 04-28-2011 |
Naotaka Izumi, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090209711 | AQUEOUS MODIFIED POLYISOCYANATE, NON-YELLOWING COATING COMPOSITION, AND ADHESIVE COMPOSITION - An aqueous modified polyisocyanate intended to be dispersed in an aqueous medium for use and obtained by reacting an HDI derivative with (A) a modifying agent composed of a methoxy polyoxyalkylene glycol mainly comprising an ethylene oxide unit, (B) a modifying agent composed of a hydroxyl group-terminated polyoxyalkylene glycol produced by using an alcohol having 8 or more carbon atoms as an initiator and mainly comprising a propylene oxide unit, and (C) a modifying agent composed of an ester compound having at least one hydroxyl group with an alkali metal salt of sulfonic acid introduced therein, wherein the concentration (calculated value) of the alkali metal salt of sulfonic acid derived from the modifying agent (C) is 1.5 to 25 μmol/g. | 08-20-2009 |
Norihiko Izumi, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090150361 | SUPPORTING CREATION OF SEARCH EXPRESSIONS EMPLOYING A PLURALITY OF WORDS - A method, apparatus, and computer program product for supporting creation of a search expression that employs a plurality of words may display a search expression creation support screen comprising a search word field for inputting therein search words and a search expression field for visually displaying, in a nodal form, a search expression that includes the inputted search words, sort the search words, inputted in the search word field, into one or more groups depending on their categories, display, in the search expression field, the search words included in each of the groups as OR-connected nodes, while displaying connections between the groups as AND-connections, and change a search expression in the search expression field in response to a user's operation that has been performed in the search word field or in the search expression field. | 06-11-2009 |
Nozomu Izumi, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090140258 | TRANSISTOR AND DISPLAY AND METHOD OF DRIVING THE SAME - A field-effect transistor including an electrically conductive substrate; a first insulating film coating the electrically conductive substrate; a gate electrode disposed on the electrically conductive substrate with the first insulating film interposed therebetween; a source electrode; a drain electrode opposing the source electrode with the channel therebetween; a second insulating film covering the gate electrode; and a semiconductor layer having a width larger than a width of the gate electrode in the channel width direction and being partly provided on the gate electrode with the second insulating film interposed therebetween so that the gate electrode, the second insulating film, and the semiconductor layer are laminated in the channel. | 06-04-2009 |
Takatomi Izumi, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110176370 | NONVOLATILE SEMICONDUCTOR MEMORY - A nonvolatile semiconductor memory comprises a memory cell array in which a plurality of memory cell transistors capable of storing data according to a threshold voltage; a row decoder having a plurality of transfer MOS transistors connected at first ends to a plurality of word lines which are respectively connected to control gate electrodes of the plurality of memory cell transistors; and a word line driver which selects supplied voltages and supplies the selected voltages to second ends of the plurality of transfer MOS transistors. The nonvolatile semiconductor memory further comprises a voltage generation circuit which supplies voltages to the word line driver; and a control circuit which controls operation of the row decoder, the word line driver and the voltage generation circuit. | 07-21-2011 |
Takeshi Izumi, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090294367 | METHOD AND APPARATUS FOR CONDENSATE DEMINERALIZATION - A method and an apparatus for performing condensate demineralization which are capable of producing a high-purity treated water containing low concentrations of sulfate ions and nitrate ions derived from TOC eluted from a cation exchange resin and anion exchange resin. A condensate demineralization method for performing a demineralization treatment of a condensate from a boiling-water reactor nuclear power plant using an ion exchange resin, wherein the method employs a mixed bed containing a uniform mixture of a strongly acidic, uniform particle size, gel-type cation exchange resin having an average particle size within a range from 450 to 600 μm and a resin particle existence ratio within a range specified by average particle size ±100 μm of not less than 95%, and a strongly basic type 1 porous anion exchange resin having a Gaussian particle size distribution, the mixed bed is mixed uniformly so that the existence ratio of the anion exchange resin is within ±5% of the design standard value across the entire mixed bed, and the demineralization treatment is performed by bringing the condensate into contact with the mixed bed. | 12-03-2009 |
| 20090296873 | METHOD AND APPARATUS FOR CONDENSATE DEMINERALIZATION - A method and an apparatus for performing a condensate demineralization treatment within a condensate demineralization apparatus of a nuclear power plant, which are capable of producing a high-purity treated water containing a low concentration of sulfate ions derived from the TOC eluted from a cation exchange resin. A condensate demineralization method for performing a demineralization treatment of a condensate from a nuclear power plant using an ion exchange resin, wherein the demineralization treatment of the condensate is performed by bringing the condensate into contact with an ion exchange resin bed that includes a mixed bed prepared by uniformly mixing a strongly acidic gel-type cation exchange resin and a strongly basic type 1 porous anion exchange resin having a cross-linking within a range from 1% to 4%. | 12-03-2009 |
Tatsuo Izumi, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090057814 | SEMICONDUCTOR MEMORY - A semiconductor memory according to an example of the invention includes active areas, and element isolation areas which isolate the active areas. The active areas and the element isolation areas are arranged alternately in a first direction. An n-th (n is odd number) active area from an endmost portion in the first direction and an (n+1)-th active area are coupled to each other at an endmost portion in a second direction perpendicular to the first direction. | 03-05-2009 |
| 20090090960 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device includes: a substrate; a control circuit layer provided on the substrate; a support layer provided on the control circuit layer; and a memory cell array layer provided on the support layer. The memory cell array layer includes: a first lamination part having first insulation layers and first conductive layers alternately laminated therein; and a second lamination part provided on either the top or bottom surface of the respective first lamination part and laminated so as to form a second conductive layer between second insulation layers. The control circuit layer includes at least any one of: a row decoder driving word lines provided in the memory cell array layer, and a sense amplifier sensing and amplifying a signal from bit lines provided in the memory cell array layer. | 04-09-2009 |
| 20100311210 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device includes: a substrate; a control circuit layer provided on the substrate; a support layer provided on the control circuit layer; and a memory cell array layer provided on the support layer. The memory cell array layer includes: a first lamination part having first insulation layers and first conductive layers alternately laminated therein; and a second lamination part provided on either the top or bottom surface of the respective first lamination part and laminated so as to form a second conductive layer between second insulation layers. The control circuit layer includes at least any one of: a row decoder driving word lines provided in the memory cell array layer, and a sense amplifier sensing and amplifying a signal from bit lines provided in the memory cell array layer. | 12-09-2010 |
| 20110024825 | SEMICONDUCTOR MEMORY - A semiconductor memory according to an example of the invention includes active areas, and element isolation areas which isolate the active areas. The active areas and the element isolation areas are arranged alternately in a first direction. An n-th (n is odd number) active area from an endmost portion in the first direction and an (n+1)-th active area are coupled to each other at an endmost portion in a second direction perpendicular to the first direction. | 02-03-2011 |
| 20110141821 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile semiconductor storage device includes: a substrate; a control circuit layer provided on the substrate; a support layer provided on the control circuit layer; and a memory cell array layer provided on the support layer. The memory cell array layer includes: a first lamination part having first insulation layers and first conductive layers alternately laminated therein; and a second lamination part provided on either the top or bottom surface of the respective first lamination part and laminated so as to form a second conductive layer between second insulation layers. The control circuit layer includes at least any one of: a row decoder driving word lines provided in the memory cell array layer, and a sense amplifier sensing and amplifying a signal from bit lines provided in the memory cell array layer. | 06-16-2011 |