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Izumi, Tokyo
Atsushi Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080255335 | Resin Composition, Polyimide Resin Composition, Polybenzoxazole Resin Composition, Varnish, Resin Film and Semiconductor Device Using the Same - A resin composition having high heat resistance and low dielectric constant after heat treatment, a varnish thereof and a semiconductor device using the same are provided by a resin composition including a compound having a structure represented by the general formula (1): | 10-16-2008 |
| 20090105464 | PHYSIOLOGICALLY ACTIVE POLYPEPTIDE AND DNA - A physiologically active polypeptide derived from human brain and a DNA fragment comprising the base sequence encoding the polypeptide are disclosed. The polypeptide possesses excellent smooth muscle relaxation activity, diuretic or natriuretic activity, and vasodepressor activity, and is thus useful as a medicine for curing circulation diseases, e.g. cardiac edema, nephric edema, hepatic edema, pulmonary edema, hypertension, congestive heart failure, and acute and chronic renal failure. | 04-23-2009 |
| 20090118431 | RESIN COMPOSITION, VARNISH, RESIN FILM AND SEMICONDUCTOR DEVICE USING THE SAME - A main object of the present invention is to provide a resin composition having high heat resistance and a low dielectric constant, a varnish thereof, a resin film thereof and a semiconductor device using the same. | 05-07-2009 |
| 20090214860 | Resin Composition, Varnish, Resin Film and Semiconductor Device - Disclosed is a resin composition comprising a benzoxazole resin precursor having a first repeating unit obtained by reacting a bisaminophenol compound and a dicarboxylic acid compound, and a cross-linking agent wherein at least one of the bisaminophenol compound and the dicarboxylic acid compound has a diamondoid structure. The benzoxazole resin precursor further comprises a second repeating unit obtained by reacting a bisaminophenol compound not having a diamondoid structure and a dicarboxylic acid compound not having a diamondoid structure. Also disclosed is a resin film comprising the resin composition. | 08-27-2009 |
| 20090318610 | ORGANIC INSULATING MATERIALS, VARNISHES FOR ORGANIC INSULATING FILM EMPLOYING THEM, ORGANIC INSULATING FILMS AND SEMICONDUCTOR DEVICES - There are provided organic insulating materials exhibiting low permittivity, high heat resistance and high mechanical strength, as well as organic insulating films with low permittivity, high heat resistance and high mechanical strength that employ the same, and semiconductor devices comprising the foregoing. An organic insulating material comprising a compound represented by general formula (1), or a polymer obtained by polymerizing a compound represented by general formula (1), or a mixture of a compound represented by general formula (1) and the polymer. | 12-24-2009 |
Gaku Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20120071056 | DEFECT CORRECTING APPARATUS AND DEFECT CORRECTING METHOD - The present disclosure provides a defect correcting apparatus including a defect detecting device configured to detect a defect within a repetitive pattern in a multilayer substrate a defect correcting device configured to correct the defect in the multilayer substrate by a specified defect correcting method, and a control device configured to, when the defect detected by the defect detecting device is detected overlapping a region in which occurrence of an interlayer short-circuit defect is assumed, generate an object corresponding to the defect correcting method for the interlayer short-circuit defect, and controlling the defect correcting device for correcting the defect using the generated object. | 03-22-2012 |
Hiroaki Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080275584 | Production management method and production management system - A production management system has processing devices A, B, C, D, E, and P. A kind of product α is processed in the order of the processing devices A, P, B, P, and C, and a kind of product β is processed in the order of the processing devices D, P, E, and P. To determine whether the processing device P is to be used to produce the product α or the product β, an input ratio of each kind of product is multiplied by the number of times of passing the processing device P for each kind of product, thereby calculating a core of each kind of product. Based on the calculated score, whether the processing device P is to be used to produce the product α or the product β is determined. Accordingly, the work-in-process balance of key processes between different kinds of products can be equalized. | 11-06-2008 |
| 20110112676 | WORK PROCESS CONTROL DEVICE, WORK PROCESS CONTROL METHOD, AND PROGRAM - An apparatus for controlling work process includes a lot allocation unit that gives a highest priority for lot-allocation to a device available for process. The device, which is given the highest priority, has at least one of a minimum number of lots-in-process and a maximum number of unworkable processes among devices available for process. | 05-12-2011 |
| 20110250707 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first group identifier allocated to a first group of semiconductor wafers is detected. The first group of semiconductor wafers includes a first semiconductor wafer to be processed first among the first group. A first processor of a plurality of processors, which process respective ones of the first group of semiconductor wafers, are determined based on the first group identifier. The first processor is used for processing the first semiconductor wafer. The first semiconductor wafer is supplied to the first processor. | 10-13-2011 |
Hiroshi Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110254501 | PORTABLE ELECTRONIC APPARATUS AND CHARGING APPARATUS - A portable electronic device including a battery, a direct current (DC) power source, a first device that consumes a first amount of power during operation, a second device that consumes a second amount of power during operation, the second amount of power being more than the first amount of power, a first switch provided in a charging path between the DC power source and the battery, a second switch provided in a path for supplying power from the battery to the second device, and a charging control circuit that controls charging the battery by connecting the first switch when external power is supplied via the DC power source, and control the second switch to be connected and the first switch to be disconnected when the second device is operated during the charging. | 10-20-2011 |
Hiroyuki Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080299184 | Anticancer agent - It is an object of the present invention to provide a cancer-suppressing agent comprising a novel cancer-suppressing gene based on the discovery of such cancer-suppressing gene. The present invention provides A cancer-suppressing agent which comprises PCDH20 gene or a homologous gene thereof. | 12-04-2008 |
| 20080312093 | Method for detecting cancer and a method for suppressing cancer - An object of the invention is to find a cancer-associated gene to be used as an index for detecting canceration of cells and degree of malignancy of cancer, so as to provide a method for detecting cancer using the cancer-associated gene as an index and provide a method of suppressing/treating cancer using the cancer-associated gene as essential part. According to the present invention, specific genes which are amplified or deleted in gastric carcinoma as compared with normal cell have been collectively found, and a method for detecting cancer using amplification or deletion of these cancer-associated genes as an index is provided. Further, cancer can be suppressed by introducing a gene which is deleted in cancer cells among these cancer-associated genes into cancer and inhibiting the transcription product of the gene amplified. | 12-18-2008 |
| 20090029357 | Method for diagnosing cancer using cancer-associated deletion gene marker - It is an object of the present invention to provide a novel method for diagnosing cancer by discovering a cancer-associated gene which could not be detected by a conventional technique, and detecting deletion, mutation, or an abnormal expression level of such cancer-associated gene. The present invention provides a method for diagnosing cancer which comprises a step of detecting deletion of the GMDS, ANKRD15, TEK, or EBI2 gene in a test sample by using DNA containing all or part of said gene. | 01-29-2009 |
Kazuhiro Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080289908 | SHEAVE SUPPORT APPARATUS FOR ELEVATOR - A sheave support apparatus for an elevator includes a car frame and a sheave support member. The car frame supports a car, and has a beam extending in a horizontal direction. The sheave support member rotatably supports a pair of sheaves around which cables pass, and is attached to the beam to extend in the horizontal direction in a state of crossing the beam of the car frame. The sheave support member includes a first support beam and a second support beam. The first and the second support beams are fixed to the beam of the car frame in a state of holding the beam therebetween from above and below. The sheaves are supported between respective end portions of the first support beam and respective end portions of the second support beam. | 11-27-2008 |
Keita Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100242892 | INTAKE MANIFOLD - The present invention provides an intake manifold that improves the intake performance and has a reduced weight. The intake manifold includes a surge tank and intake pipes. Each intake pipe has an inlet port that is connected to the surge tank. The inlet ports are arranged along a flow direction of air drawn into the surge tank from the opening of the surge tank, and project into the surge tank along direction that intersects the flow direction. Each adjacent pair of the inlet ports are separated only by a single common pipe wall. | 09-30-2010 |
| 20100303186 | Synchronization circuit, synchronization method, and reception system - Disclosed herein is a synchronization circuit including: a first phase-locked loop circuit; a second phase-locked loop circuit; a first output circuit; a second output circuit; a first detection circuit; a second detection circuit; and a control circuit. | 12-02-2010 |
| 20120063549 | SIGNAL RECEIVING APPARATUS, SIGNAL RECEIVING METHOD AND SIGNAL RECEIVING PROGRAM - A signal receiving apparatus has: a radius identifying section configured to identify a radius representing a distance from an origin on an IQ plane of signal points each corresponding to a symbol obtained from a received signal modulated by adoption of an APSK modulation method; and a parameter outputting section configured to output a control parameter related to a demodulation or decoding process of the received signal on the basis of the identified radius. | 03-15-2012 |
Kikuo Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20120092915 | POWER CONVERSION APPARATUS - A power conversion apparatus including: a three-level inverter including bridge circuits each including a first semiconductor switching device and a second semiconductor switching device connected in series, the bridge circuits being connected to a positive terminal and a negative terminal of a DC power supply, and switch circuits having bidirectional characteristics and connected to respective AC output terminals of the bridge circuits which are the connection points between the first semiconductor switching devices and the second semiconductor switching devices, and to an intermediate potential point of the DC power supply; and single-phase inverters each including a plurality of semiconductor switching devices and respectively connected in series to the AC output terminals of the bridge circuits. The sum of an output voltage of the three-level inverter and output voltages of the single-phase inverters is supplied to a load. | 04-19-2012 |
Kouji Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090308176 | ELECTROMAGNETIC FLOWMETER - To ensure, with ease, airtightness of an internal cavity when connecting a shielded lead lines to the outside. Tubes are installed on the portions of shields of lead lines positioned at through passages of a packing. An adhesive agent is caused to flow between the tubes and the shields, to bond therebetween. Doing so maintains an airtight seal through the adhesive agent (an adhesive agent that is caused to penetrate the spaces in the meshes of the shields, and hardened therein) between the shields and the inner peripheral surfaces of the tubes of the lead lines through the inner peripheral surfaces of the through passages of the packing and the outer peripheral surfaces of the tubes of the lead lines being tightly sealed. | 12-17-2009 |
| 20100011877 | CAPACITIVE ELECTROMAGNETIC FLOWMETER - A measuring pipe obtained by applying an insulating resin lining to the inside of a nonmagnetic pipe is employed. A through hole reaching the resin lining is made in the sidewall of the nonmagnetic pipe, and a signal electrode and a guard electrode are arranged in the through hole. The through hole is filled with an insulating vibration absorbing member so as to cover the periphery of the signal electrode and the guard electrode. A gelatinous substance of silicon resin, or the like, is employed as the vibration absorbing member, but liquid such as oil may be employed to liquid seal the signal electrode and the guard electrode in the through hole. Consequently, the electromagnetic flowmeter can be formed compact and its production is facilitated. | 01-21-2010 |
| 20110041620 | ELECTROMAGNETIC FLOWMETER - An electromagnetic flowmeter comprises an exiting coil, and a signal electrode having an electrode section, an axis portion, a first member which has elasticity, a second member which is harder than the first member, and a ring shape dividing wall which is harder than the second member, wherein the first and second members and the ring shape dividing wall are inserted between a rear face of the electrode section and an inner circumference face of the measuring pipe, the axis portion is projected to an outer circumference face of the measuring pipe through a through hole, and a fastening member is fastened to the axis portion which projects to the outer circumference face of the measuring pipe so that the first member is sandwiched between the rear face of the electrode section and the inner circumference face of the measuring pipe so as to be elastically deformed. | 02-24-2011 |
Kuniaki Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110134109 | AUTO-STEREOSCOPIC INTERPOLATION - Described are computer-based methods and apparatuses, including computer program products, for auto-stereoscopic interpolation. A first two dimensional image and a second two dimensional image are received. A reduced pixel image is generated for each of the first and second two dimensional images, wherein each reduced pixel image comprises a reduced pixel size that is less than the original pixel size. Boundary information is calculated for each of the first and second two dimensional images. A depth map is calculated for the first and second reduced pixel images, wherein the depth map comprises data indicative of three dimensional information for one or more objects in the first and second reduced pixel images. A depth map is calculated for the first and second two dimensional images based on the boundary information for each of the first and second two dimensional images and the depth map of the first and second reduced pixel images. | 06-09-2011 |
| 20110135194 | PULLING KEYS FROM COLOR SEGMENTED IMAGES - Described are computer-based methods and apparatuses, including computer program products, for pulling keys from color segmented images. Data indicative of a two dimensional image is stored in a data storage device, the two dimensional image comprising a plurality of pixels. A plurality of color segmented frames are generated based on the two dimensional image, wherein each color segmented frame comprises one or more objects. For each of the color segmented frames, a key is generated based on the one or more objects. A depth map is calculated for the two dimensional image based on the keys, wherein the depth map comprises data indicative of three dimensional information for each pixel of the two dimensional image. | 06-09-2011 |
Masahiro Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080287038 | Polishing composition for semiconductor wafer, method for production thereof and polishing method - The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6. | 11-20-2008 |
| 20080311750 | Polishing composition for semiconductor wafer and polishing method - The present invention relates to a polishing composition for a semiconductor wafer which is excellent in polishing property, and a polishing method. The polishing composition for a semiconductor wafer comprises colloidal silica consisting of non-spherical silica particles having a ratio of long axis to short axis of 1.5 to 15. The polishing method for a semiconductor wafer uses the polishing composition. The polishing composition can provide a remarkably high polishing rate compared with a polishing composition using spherical colloidal silica, and can provide good mirror-polishing without causing scratches. In addition, small alkali metal content enables reduction of adverse effects on a semiconductor wafer, such as residual abrasives after polishing. | 12-18-2008 |
| 20090253813 | Colloidal silica consisting of silica particles fixing nitrogen contained alkaline compound - A colloidal silica comprising, silica particles inside of which or on the surface of which a nitrogen containing alkaline compound is fixed, wherein said silica particles are prepared by forming and growing colloid particles using the nitrogen containing alkaline compound. Said colloidal silica can be prepared by preparing active silicic acid aqueous solution contacting silicate alkali aqueous solution with cation exchange resin, adding the nitrogen containing alkaline compound and heating, and then growing up particles by build-up method. | 10-08-2009 |
| 20100163786 | Polishing composition for semiconductor wafer - A polishing composition for semiconductor wafer polishing comprising, colloidal silica prepared from an active silicic acid aqueous solution obtained by removal of alkali from alkali silicate and at least one nitrogen containing basic compound selected from a group consisting of ethylenediamine, diethylenediamine, imidazole, methylimidazole, piperidine, morpholine, arginine, and hydrazine, wherein pH of the colloidal silica is of 8.5 to 11.0 at 25° C. by containing quaternary ammonium hydroxide. | 07-01-2010 |
Masanori Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090137499 | BENZYLPHENYL GLUCOPYRANOSIDE DERIVATIVE - The present invention relates to a benzylphenyl glucopyranoside derivative having an excellent inhibitory effect on human SGLT1 and/or SGLT2 activity. There is provided a compound or a pharmacologically acceptable salt thereof represented by the following general formula (I): | 05-28-2009 |
Masaru Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100049938 | MEMORY MANAGEMENT METHOD, AND MEMORY MANAGEMENT APPARATUS - When a program execution unit of a computer executes a creation instruction of objects utilized by an execution target program in process of executing the execution target program, the program execution unit disposes a created object in an internal heap when a life period of the created object is not contained within life period of objects for root class and gets average value of life time corresponding to set of objects to which the created object belongs with reference to memory allocation information table to dispose the created object as a long-life object in an external heap when the gotten average value of life time is equal to or larger than a predetermined value. Accordingly, life time of objects is measured and long-life objects are not managed by GC, so that program utilizing objects can be executed at high speed. | 02-25-2010 |
Masato Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080303581 | SEMICONDUCTOR DEVICE - A semiconductor device comprises a driver provided for a semiconductor element having a control electrode to which a drive voltage is applied, the semiconductor element being switched between the conduction state and the non-conduction state based on the drive voltage, the driver operative to apply the drive voltage to the control electrode; a detector operative to supply a voltage detection signal oscillating at a certain frequency to the control electrode to detect a first voltage having a certain relation to a voltage applied to the semiconductor element; and a controller operative to control the detector based on the first voltage detected at the detector. | 12-11-2008 |
Naofumi Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080305721 | TREATING METHOD FOR BRITTLE MEMBER - An object of the present invention is to provide a treating method for brittle member capable of stably holding the brittle member when applying predetermined treatments such as transportation and grinding back surface of a brittle member such as a semi-conductor wafer and separating the brittle member without breakage after finishing required treatment to thereby attaining high thickness accuracy of the brittle member. | 12-11-2008 |
| 20100144120 | Method for Producing Chip with Adhesive Applied - A method for producing a chip ( | 06-10-2010 |
Naohumi Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110034659 | MOLDING MATERIAL COMPOSED OF POLYORGANOSILOXANE COMPOUND, SEALING MATERIAL, AND SEALED OPTICAL DEVICE - A molding material includes a polyorganosiloxane compound having a ladder structure including a repeating unit shown by the following formula (I) in the molecule as a main component, a sealing material includes the molding material, and a sealed optical device includes an optical device that is sealed with a cured product of the sealing material. The molding material produces a cured product that exhibits excellent transparency and heat resistance for a long time. | 02-10-2011 |
Naoki Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090294912 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region. | 12-03-2009 |
| 20090317945 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - Size of a chipping is made small, suppressing blinding of a blade, when performing dicing of a wafer. | 12-24-2009 |
| 20100109148 | SEMICONDUCTOR DEVICE - When a second semiconductor chip is mounted onto a first semiconductor chip, collision of the first semiconductor chip with a lead frame is to be prevented. The lead frame has a die pad and suspending leads for supporting the die pad. A joining portion is provided over the lead frame. The first semiconductor chip is provided over the lead frame through the joining portion. The second semiconductor chip is provided over the first semiconductor chip. A resin member covers the die pad and the first and second semiconductor chips. The joining portion is positioned over each of the die pad and the suspending leads. | 05-06-2010 |
| 20100164077 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device. | 07-01-2010 |
| 20100167468 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes a bonding step of bonding a chip on a wiring board by means of a bonding layer, and a wire bonding step of bonding a wire to a pad on the chip while applying ultrasonic vibration after the bonding step. A material having an elastic modulus of 100 MPa or higher at a process temperature in the wire bonding step is used as the bonding layer. | 07-01-2010 |
| 20100261334 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region. | 10-14-2010 |
| 20110266657 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region. | 11-03-2011 |
Ryotaro Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20120087018 | ZOOM LENS - There is provided a zoom lens which is suitable for a digital still camera and a video camera and includes a small number of lenses, especially a zoom lens which has an angle of view of 75° or more at the wide-angle end and a variable power ratio of about ×10. The zoom lens includes a first lens group with positive refractive power, a second lens group with negative refractive power, a third lens group with positive refractive power, and, a fourth lens group with positive refractive power. The zoom lens varies power by changing an interval of each neighboring lens groups. The first lens group is composed of a negative lens and a positive lens. The third lens group is composed of an aperture stop, a cemented lens formed by a positive lens in a biconvex shape and a negative lens, and a positive lens. | 04-12-2012 |
Saki Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110287552 | REAGENT FOR MEASURING ACTIVE NITROGEN - A compound represented by the general formula (I) [R | 11-24-2011 |
Sawa Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110175079 | COMPOUND HAVING SUBSTITUTED ANTHRACENE RING STRUCTURE AND PYRIDOINDOLE RING STRUCTURE AND ORGANIC ELECTROLUMINESCENCE DEVICE - The present invention provides an organic compound having excellent properties, which is excellent in electron-injection/transport performance, has hole-blocking ability and is high stability in a thin-film state, as a material for an organic electroluminescence device having a high efficiency and a high durability, and provides is an organic electroluminescence device having a high efficiency and a high durability using the compound. The present invention relates to a compound having a substituted anthracene ring structure and a pyridoindole ring structure represented by general formula (1); and an organic electroluminescence device having a pair of electrodes and at least one organic layer interposed between the electrodes in which the at least one organic layer contains the compound. | 07-21-2011 |
Shingo Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100108501 | MO-BASED SPUTTERING TARGET PLATE AND METHOD FOR MANUFACTURING THE SAME - A method for efficiently manufacturing a large-area Mo-based target plate at a high yield is provided. In the manufacturing method, the condition of the content of a trace element and the rolling condition are used in combination to reduce the deformation resistance and to suppress the occurrence of cracks such as edge cracking. The method for manufacturing an Mo-based sputtering target by rolling an Mo-based ingot includes the steps of: manufacturing the Mo-based ingot in which the oxygen concentration is controlled to 10 ppm by mass or more and 1000 ppm by mass or less; and heating and rolling the Mo-based ingot at a rolling temperature of 600° C. or more and 950° C. or less. | 05-06-2010 |
Shinji Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090185765 | LINEAR GUIDANCE DEVICE - Provided is a linear guidance device in which a track groove ( | 07-23-2009 |
Shuichi Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080306351 | SLEEP EVALUATION DEVICE - A sleep evaluation device | 12-11-2008 |
Takashi Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090184388 | Photodiode, ultraviolet sensor having the photodiode, and method of producing the photodiode - A photodiode includes a silicon semiconductor layer; a P-type high concentration diffusion layer with a P-type impurity diffused therein at a high concentration; an N-type high concentration diffusion layer with an N-type impurity diffused therein at a high concentration; and a low concentration diffusion layer with one of the P-type impurity and the N-type impurity diffused therein at a low concentration. The P-type high concentration diffusion layer and the N-type high concentration diffusion layer are formed in the silicon semiconductor layer, and are arranged to face each other with the low concentration diffusion layer in between. The photodiode further includes an interlayer insulation film formed on the silicon semiconductor layer, so that a covalent bond between silicon and hydrogen is formed in an atom row of the low concentration layer adjacent to an interface thereof with respect to the interlayer insulation film. The silicon semiconductor layer where the low concentration layer is formed may have a thickness between 3 nm and 36 nm. | 07-23-2009 |
| 20100109114 | Semiconductor device and manufacturing method thereof - A semiconductor device manufacturing method includes etching a silicon on insulator (SOI) from its surface (i.e., semiconductor substrate layer) to form a first trench and a second trench. The first trench extends through the SOI substrate and reaches an electrode pad. The second trench terminates in the semiconductor substrate layer. The manufacturing method also includes forming an insulation film that covers the surface of the semiconductor substrate layer as well as the side walls and bottoms of the first and second trenches. The manufacturing method also includes removing the insulation film from the bottoms of the first and second trenches to expose the electrode pad from the first trench bottom and to expose the semiconductor substrate layer from the second trench bottom. The manufacturing method also includes forming a conductive film that covers the semiconductor substrate layer and the side walls and the bottoms of the first and second trenches to form a through via electrically connected to the electrode pad at the first trench bottom and to form a contact part electrically connected to the semiconductor substrate layer at the second trench bottom. The manufacturing method also includes patterning the conductive film on the semiconductor substrate layer to form the external electrodes and to form a potential fixing external electrode electrically connected to the contact part. | 05-06-2010 |
Takayuki Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080242103 | Method of manufacturing semiconductor device and semiconductor manufacturing apparatus - A method of manufacturing a semiconductor device having a process for cleaning a semiconductor substrate after the semiconductor substrate is etched for patterning includes a first process of preparing the semiconductor substrate having a first temperature, a second process of setting the semiconductor substrate at a second temperature, a third process of etching the semiconductor substrate having the second temperature by etching liquid having a third temperature, a fourth process of cleaning the semiconductor substrate to which the etching liquid is adhered, by ultrapure water having a fourth temperature, wherein the second temperature is set at the range between the first and the third temperatures. | 10-02-2008 |
| 20100048016 | Semiconductor device manufacturing method - A semiconductor device manufacturing method includes: providing a laminated member in which at least a first GaAs layer, an InAlGaAs layer and a second GaAs layer are laminated on or above a substrate in this order; and etching the second GaAs layer using the InAlGaAs layer as an etching stopper layer. A ratio of In:Al of the InAlGaAs layer is in a range of approximately 4:6 to approximately 6:4 and a ratio of (In+Al):Ga of the InAlGaAs layer is in a range of approximately 1.5:8.5 to approximately 5:5. | 02-25-2010 |
Tatsuo Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20120061766 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In the device, first and second transistors have first and second gates and first and second source/drain regions, respectively. First and second contacts are electrically connected to the first and the second source/drain regions, respectively. A width of a first bottom surface if the first contacts in a gate width direction of the first-gate is wider than a width of the first bottom in a gate length direction of the first-gate. Widths of a second bottom surface of the second-contact are narrower than the longitudinal direction width of the first bottom. The high-concentration region is formed between the first source/drain regions and the first-contact. Extending widths of an outline of the high-concentration region extending from an outline of the first bottom in the longitudinal direction is larger than extending widths of an outline of the high-concentration region extending from an outline thereof in the short direction. | 03-15-2012 |
Teruo Izumi, Tokyo JP
| Patent application number | Description | Published |
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| 20090170708 | SUPERCONDUCTING WIRE AND SUPERCONDUCTING COIL MADE THEREWITH - Tape-shaped superconducting wires, and a superconducting coil formed from said wires, wherein a plurality of electrically separated superconducting film parts, each having a rectangular cross section and arranged in parallel, form parallel conductors, providing superconducting wires capable of containing losses incurred in the presence of alternating current (A/C). A superconducting coil is made by winding the superconducting wires, wherein the coil structure contains at least a part wherein perpendicular interlinkage magnetic fluxes acting among conductor elements of the parallel conductors by the distribution of magnetic fields generated by the superconducting coils cancel mutually in order to contain circulating current within the wires and to make shunt current uniform, thereby providing a low-loss A/C superconducting coil. | 07-02-2009 |
| 20090221427 | SUPERCONDUCTING WIRE, SUPERCONDUCTING CONDUCTOR, AND SUPERCONDUCTING CABLE - A superconducting wire having at least a superconducting thin film and a stabilizing film formed one on top of another in order on a substrate having a predetermined width and a predetermined length, the superconducting wire having at least one cut made along a direction of the length of the superconducting wire, the superconducting wire being bendable at the cut in a width direction. | 09-03-2009 |
| 20090270263 | PROCESS FOR PRODUCING TAPE-SHAPED Re-TYPE (123) SUPERCONDUCTOR - This invention provides a production process of a tape-shaped superconductor which can realize high Jc and Ic values by virtue of the elimination of the cause of generation of cracks and deterioration of an electrical connectivity in crystal grain boundaries. In producing an Re-base (123) superconductor on a substrate by an MAD process, the use of a raw material solution having a Re:Ba:Cu molar ratio of 1:X:3, wherein X is a Ba molar ratio satisfying X<2 (preferably 1.0≦X≦1.8, especially 1.3≦x≦1.7), can realize the production of a thick-film tape-shaped superconductor having a superconductivity of Jc=3.20 MA/cm2 and Ic=525 A/cm (X=1.5). | 10-29-2009 |
| 20090286686 | Process for Producing Thick-Film Tape-Shaped Re-Type (123) Superconductor - This invention provides a production process of a thick-film tape-shaped RE-type (123) superconductor having a high critical current value. The production process comprises providing a composite substrate comprising Gd | 11-19-2009 |
| 20110105336 | RARE EARTH ELEMENT OXIDE SUPERCONDUCTIVE WIRE MATERIAL AND METHOD OF PRODUCING THE SAME - The present invention relates to a rare earth element oxide superconductive wire material improved in orientation by forming the bed layer by the MOD method. In the superconductive wire material ( | 05-05-2011 |
| 20110124508 | RE-TYPE OXIDE SUPERCONDUCTING WIRE AND PROCESS FOR PRODUCING THE SAME - A RE-type oxide superconducting wire having excellent angular dependence for magnetic field of Jc is obtained by finely dispersing magnetic flux pinning centers into a superconductor. A mixed solution which comprises a metal-organic complex solution including a metal element which composes a RE-type oxide superconductor whose Ba content is reduced and a metal-organic complex solution including at least one or more kinds of metals which are selected from Zr, Ce, Sn, or Ti which has a larger affinity for Ba is coated onto an intermediate layer of a composite substrate, and the assembly is then calcined to disperse artificially and finely oxide particles (magnetic flux pinning centers) including Zr. Thus, the angular dependence for magnetic field (Jc | 05-26-2011 |
| 20120035055 | RE1Ba2Cu3O7-z SUPERCONDUCTOR - Problem: To provide an REBCO superconductor which has electromagnetic properties of an extremely small magnetization in a DC magnetic field or an extremely small pinning loss in a fluctuating magnetic field and thereby enable production of a REBCO superconducting wire with an extremely small magnetization and pinning loss. | 02-09-2012 |
Tetsuya Izumi, Tokyo JP
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| 20090098169 | MODIFIED CLAY MINERAL - Modified clay minerals obtained by treating a clay mineral with a particular acylarginine derivative are useful for stabilizing emulsion compositions, inter alia, W/O emulsion composition, while hardly causing skin irritation, and providing moisture retention properties. | 04-16-2009 |
Yoshihiko Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110027660 | POLYOLEFIN MICROPOROUS FILM AND ROLL - An object of the present invention is to provide a polyolefin microporous film that can sufficiently reduce the occurrence of raised edges at a slitting step such as a slitting step at the time of producing the polyolefin microporous film and a slitting step at the time of processing the polyolefin microporous film into a roll. The present invention provides a polyolefin microporous film formed from a polyolefin composition comprising a polyethylene, a first polypropylene having a viscosity average molecular weight of not less than 50,000 and less than 300,000, and a second polypropylene having a viscosity average molecular weight of not less than 300,000. | 02-03-2011 |
| 20110059368 | SEPARTOR FOR HIGH-POWER DENSITY LITHIUM ION SECONDARY BATTERY (AS AMENDED) - There is provided a separator for a high-power density lithium ion secondary battery, the separator comprising a polyolefin microporous membrane, wherein the polyolefin microporous membrane has a tensile strength in the longitudinal direction (MD) of 50 MPa or higher and a tensile strength in the transverse direction (TD) of 50 MPa or higher, and a sum total of an MD tensile elongation and a TD tensile elongation of 20 to 250%; and the polyolefin microporous membrane comprises a polypropylene. | 03-10-2011 |
Yotaro Izumi, Tokyo JP
| Patent application number | Description | Published |
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| 20110184401 | CRYOTHERAPY PLANNING DEVICE AND CRYOTHERAPY DEVICE - The present invention relates to a treatment device utilized in the freezing treatment method and its treatment planning device, and has an object to settle a freezing period·defrosting period according to a size of a treatment portion. | 07-28-2011 |
Yuichi Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20110302300 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND PROGRAM - An apparatus and method provide logic for formatting electronic content. In one implementation, an apparatus includes an identification unit configured to identify a plurality of devices associated via a network, and a receiving unit configured to receive information corresponding to the associated devices. The information includes a function provided by the associated devices and performance data corresponding to the associated devices. A generation unit is configured to generate a first value of an execution metric describing at least one of an execution of the function by the associated devices or the performance data corresponding to the associated devices, based on at least the received information, and an output unit is configured to output the first metric value. | 12-08-2011 |
Yuji Izumi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080288731 | Request arbitration device and memory controller - A bus arbiter receives requests of initiators, and internally includes a page hit/miss determining unit with permissible determining function, a bank open/close determining unit with permissible determining function, and an LRU unit with permissible determining function. Regarding the priority of the request arbitration on the requests, the bank priority on the SDRAM is determined in the order of page hit, bank open, and LRU. Furthermore, each determining unit internally includes a permissible time determining unit, and processes, at top priority, the request of the initiator which the corresponding permissible time is below the count threshold value in the priority processing of the determining unit. | 11-20-2008 |
Yukio Izumi, Tokyo JP
| Patent application number | Description | Published |
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| 20090033510 | Information Storage Device, Information Storage Program, Verification Device and Information Storage Method - An information storage device which can record highly reliable information is provided. The moving object information storage device | 02-05-2009 |