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Iwashita, Tokyo

Akihiko Iwashita, Tokyo JP

Patent application numberDescriptionPublished
20100048934PROCESS FOR PRODUCING FULLERENE DERIVATIVE - The present invention provides a method for producing a fullerene derivative, comprising the organic group addition step B in which an organic group is further added by reacting at least a basic compound and a halogen compound with a fullerene derivative, which is obtained by addition of a hydrogen atom and an organic group in the organic group addition step A, in which an organic group is added by reacting at least a Grignard reagent and a polar substance with a fullerene or fullerene derivative.02-25-2010

Akiko Iwashita, Tokyo JP

Patent application numberDescriptionPublished
20100146343ELECTRONIC BULLETIN BOARD MANAGING APPARATUS AND MESSAGE NOTIFYING METHOD - An electronic bulletin board management apparatus and message notification method for permitting a user receiving a notification to quickly know on which bulletin board a message was posted. A communication system includes a message registry for storing data written from a plurality of communication terminals, in memory areas partitioned for the respective communication terminals, and a web server for delivering the stored data in a browsable state in response to a request from a communication terminal. When a piece of data is stored in the message registry by a writing process from one communication terminal, a mail server transmits a notification mail containing notification information to notify that the writing process was done, and a URL to identify a memory area storing the piece of data, in accordance with an instruction from the web server.06-10-2010

Hiromasa Iwashita, Tokyo JP

Patent application numberDescriptionPublished
20100000963PLASTIC BOTTLE - [Problem] To provide a plastic bottle that can improve grippability and portability, being an item created with the focus on a practical flattened bottle that takes into consideration consumers' needs. [Means of Solution] A plastic bottle (01-07-2010

Hiroyuki Iwashita, Tokyo JP

Patent application numberDescriptionPublished
20090155698PHOTOMASK BLANK AND PRODUCTION METHOD THEREOF, AND PHOTOMASK PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD - There are provided a photomask blank which is capable of preventing static buildup caused by electron beam pattern drawing for forming a resist pattern, a photomask blank which provides a good pattern accuracy through optimization of the dry etching rate along the depth direction of the shielding film, and a photomask blank which is capable of reducing the dry etching time by increasing the dry etching rate of the shielding film.06-18-2009
20090233182PHOTOMASK BLANK AND METHOD OF PRODUCING THE SAME, METHOD OF PRODUCING PHOTOMASK, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - It is provided a photomask blank that has good flatness when a light-shielding film is patterned and hence can provide a good mask pattern accuracy and a good pattern transfer accuracy, and a method of producing a photomask.09-17-2009
20090246647PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME - A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.10-01-2009
20110177436MASK BLANK AND METHOD OF MANUFACTURING A TRANSFER MASK - A mask blank includes a transparent substrate and a light-shielding film formed on the transparent substrate. The light-shielding film is made of a material composed mainly of a metal that is dry-etchable with a chlorine-based gas. A resist film is used to form a transfer pattern in the light-shielding film. An etching mask film is formed on an upper surface of the light-shielding film and is made of a material containing a transition metal, silicon, and at least one of nitrogen and oxygen. A content ratio of the transition metal to a total of the transition metal and the silicon in the etching mask film is less than 9%.07-21-2011
20110212392PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME - A photomask blank is for use in manufacturing a photomask to be applied with exposure light having a wavelength of 200 nm or less. The photomask blank has a light-transmitting substrate and a light-shielding film formed thereon. The light-shielding film has a light-shielding layer containing a transition metal and silicon and a front-surface antireflection layer formed contiguously on the light-shielding layer and made of a material containing at least one of oxygen and nitrogen. The light-shielding film has a front-surface reflectance of a predetermined value or less for the exposure light and has a property capable of controlling the change width of the front-surface reflectance at the exposure wavelength to be within 2% when the thickness of the front-surface antireflection layer changes in the range of 2 nm. The material of the front-surface antireflection layer having a refractive index n and an extinction coefficient k capable of achieving such property is selected.09-01-2011

Kazue Iwashita, Tokyo JP

Patent application numberDescriptionPublished
20090086268PRINT CONFIGURATION PROGRAM AND INFORMATION PROCESSING APPARATUS - A printing setting program is provided that can be executed by an information processing apparatus for setting a printing condition. The printing setting program has: a plurality of setting sections, each of the plurality of setting sections having a setting item for setting a printing process; a displaying section adapted for displaying the setting section; a detecting section adapted for detecting a change of the setting item; and a memorizing section adapted for memorizing setting item information relating to the setting item detected as changed by the detecting section, wherein one of the plurality of setting sections displayed in a front of the plurality of setting sections at a start of the printing setting program is determined according to the setting item information memorized in the memorizing section.04-02-2009

Kazuhiro Iwashita, Tokyo JP

Patent application numberDescriptionPublished
20110233872SEALING DEVICE - Provided is a sealing device that increases the lubricity of seal surfaces, prevents leakage of sealed fluids, and prevents excessive heat generation and excessive friction at seal surfaces. Said sealing device, which is of the type that seals a fluid trying to leak from the outer periphery of a sealing surface towards the inner periphery thereof, forms at least two dimples in a circumferential direction in each of a plurality of rows arranged in a radial direction on a sealing surface of a stationary-side sealing element or a rotating-side sealing element. Each dimple is tilted by a dimple angle θ between 0° and 90°, exclusive, such that the tip of that dimple in the direction of rotation is tilted toward the inner periphery side. In each of the plurality of rows of dimples, land areas are formed in the circumferential direction between the proximate tips of adjacent dimples. For each of the plurality of rows of dimples, if a circle is drawn through the centers of the dimples in that row, let L1 be the distance along the circle from the point the circle enters a dimple to the point the circle leaves that dimple, and let L2 be the length, along the circle, of the land areas between dimples. The dimples are characterized by being arranged such that the gap ratio L1/L2 is between 0.001 and 0.1, inclusive.09-29-2011

Tetsuro Iwashita, Tokyo JP

Patent application numberDescriptionPublished
20110031592SILICON EPITAXIAL WAFER AND METHOD FOR PRODUCTION THEREOF - Disclosed is a wafer having a good haze level in spite of the fact that the inclination angle of {110} plane in the wafer is small. Also disclosed is a method for producing a silicon epitaxial wafer, which comprises the steps of: growing an epitaxial layer on a silicon single crystal substrate having a main surface of {110} plane of which an off-angle is less than 1 degree; and polishing the surface of the epitaxial layer until the surface of the epitaxial layer has a haze level of 0.18 ppm or less (as measured by SP2 at a DWO mode).02-10-2011

Tsutomu Iwashita, Tokyo JP

Patent application numberDescriptionPublished
20110194077Illuminating optical system for projector - An illuminating optical system for a projector including a light source and a plurality of display panels, includes a first integrator that includes a plurality of lens cells that divide a luminous flux emitted by the light source into a plurality of partial luminous fluxes and that condense the respective partial luminous fluxes, a second integrator that includes a plurality of lens cells on which the respective partial luminous fluxes are incident, a polarization converting element that uniformizes polarizing directions of the luminous fluxes having passed through the respective lens cells of the second integrator, and a color separating unit that separates each of the luminous fluxes from the polarization converting element into a plurality of color lights of different wavelengths. A field lens and a condenser lens are arranged between the polarization converting element and the color separating unit. The field lens superimposes, on the plurality of display panels, the luminous fluxes having passed through the respective lens cells of the first integrator.08-11-2011