| Patent application number | Description | Published |
|---|
| 20080237048 | METHOD AND APPARATUS FOR SELECTIVE ELECTROFILLING OF THROUGH-WAFER VIAS - A device for electrodepositing a conductive material from a first solution into at least one feature formed on a wafer includes a hollow body, an electrode, and a moving mechanism. The hollow body includes a first opening and a second opening. The first solution is supplied to the second opening and injected from the first opening. The electrode is disposed within the hollow body. A potential difference is applicable between the first electrode and the surface of the wafer to electrodeposit the conductive material into the at least one feature. The moving mechanism is mechanically coupled to the hollow body. The moving mechanism is configured to position the first opening of the hollow body over the at least one feature. | 10-02-2008 |
| 20090068832 | THIN FILMS - Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO | 03-12-2009 |
| 20100006024 | EPITAXIAL SEMICONDUCTOR DEPOSITION METHODS AND STRUCTURES - Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer. | 01-14-2010 |
| 20100009080 | FLUIDIZED BED EVAPORATOR - Methods and systems for depositing a film on a substrate are disclosed. In one embodiment, a method includes converting a non-gaseous precursor into vapor phase. Converting the precursor includes: forming a fluidized bed by flowing gas at a sufficiently high flow rate to suspend and stir a plurality of solid particles, and converting the phase of the non-gaseous precursor into vapor phase in the fluidized bed. The method also includes transferring the precursor in vapor phase through a passage; and performing deposition on one or more substrates with the transferred precursor in vapor phase. | 01-14-2010 |
| 20100107978 | DEPOSITION FROM LIQUID SOURCES - A liquid injector is used to vaporize and inject a silicon precursor into a process chamber to form silicon-containing layers during a semiconductor fabrication process. The injector is connected to a source of silicon precursor, which preferably comprises liquid trisilane in a mixture with one or more dopant precursors. The mixture is metered as a liquid and delivered to the injector, where it is then vaporized and injected into the process chamber. | 05-06-2010 |
| 20100155859 | SELECTIVE SILICIDE PROCESS - A method of self-aligned silicidation on structures having high aspect ratios involves depositing a metal oxide film using atomic layer deposition (ALD) and converting the metal oxide film to metal film in order to obtain uniform step coverage. The substrate is then annealed such that the metal in regions directly overlying the patterned and exposed silicon reacts with the silicon to form uniform metal silicide at the desired locations. | 06-24-2010 |
| 20110256718 | THIN FILMS - Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO | 10-20-2011 |
| 20110269310 | SELECTIVE SILICIDE PROCESS - A method of self-aligned silicidation on structures having high aspect ratios involves depositing a metal oxide film using atomic layer deposition (ALD) and converting the metal oxide film to metal film in order to obtain uniform step coverage. The substrate is then annealed such that the metal in regions directly overlying the patterned and exposed silicon reacts with the silicon to form uniform metal silicide at the desired locations. | 11-03-2011 |
