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Ivan
Boeykens Ivan, Merksem BE
| Patent application number | Description | Published |
|---|---|---|
| 20110033689 | PRODUCTION METHOD FOR THE MANUFACTURING OF VERY THIN MONOLITHIC LAYERS OF THERMOPLASTIC POLYURETHANE AND PRODUCT COMPOSITIONS DERIVED FROM SUCH LAYERS - Production method for the manufacturing of very thin monolithic layers of thermoplastic polyurethane (TPU) characterized in that the TPU is extrusion coated and/or laminated with an extrusion head with a mouth opening of less than 0.80 mm, and preferably of 0.60 mm, whereby the line speed is held between 50 m/min and 200 m/min, and preferably at 100 m/min, and whereby the extruder head temperature is held between 150° C. and 270° C., and preferably at 175° C., and whereby the extruder compression ratio is held between 3.0 and 3.8, and preferably at 3.5, and whereby the pressing pressure of the extruder is kept between 10 bar and 80 bar, and preferably at 40 bar. | 02-10-2011 |
Frank Ivan, Echo Bay CA
| Patent application number | Description | Published |
|---|---|---|
| 20110107895 | Double Helix Die Grooving Tool for Pipe - A die grooving tool for insertion into a pipe having a first die body and a second die body mounted upon a first end of the first die body. Each of the first die body and a second die body have a plurality of openings thereon for receiving a plurality of cutting wheels mounted therein. The first die body is configured to rotate at least partially in a clockwise direction and the second die body is configured to rotate at least partially in a counter clockwise direction, so that the cutting wheels of the first die body and the second die body create a double helix groove on an interior of the pipe, whereby the double helix groove intersects at an intersection point every 360 degrees along an entire length of the pipe. | 05-12-2011 |
Micallaef Ivan, Taoyuan TW
| Patent application number | Description | Published |
|---|---|---|
| 20100108345 | LID FOR MICRO-ELECTRO-MECHANICAL DEVICE AND METHOD FOR FABRICATING THE SAME - A lid for a micro-electro-mechanical device and a method for fabricating the same are provided. The lid includes a board with opposite first and second surfaces and a first conductor layer. The first surface has a first metal layer thereon. The first metal layer and the board have a recess formed therein. The recess has a bottom surface and a side surface adjacent thereto. The first conductor layer is formed on the first metal layer and the bottom and side surfaces of the recess. The shielding effect of the side surface of the board is enhanced because of the recess integral to the board, the homogeneous bottom and side surfaces of the recess, and the first conductor layer covering the first metal layer, the bottom and side surfaces of the recess. Hence, the shielding effect upon the micro-electro-mechanical device is enhanced. | 05-06-2010 |
Nikulin Ivan, Tula RU
| Patent application number | Description | Published |
|---|---|---|
| 20090078972 | SENSOR THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE HAVING THE SAME, AND METHOD OF MANUFACTURING THE SAME - A sensor thin film transistor includes a gate electrode, a gate insulation layer formed on the gate electrode, a semiconductor layer having a portion positioned above the gate electrode and on a side of the gate insulation layer opposite the gate electrode, and a source electrode and drain electrode having spaced apart ends positioned on the semiconductor layer, wherein the sensor thin film transistor is operative such that a signal-to-noise ratio is equal to or greater than about 200 when the gate-off voltage applied to the gate electrode is equal to or less than about 0V. | 03-26-2009 |
| 20090190057 | THIN FILM TRANSISTOR, METHOD OF RECOVERING PERFORMANCE OF THE SAME, AND LIQUID CRYSTAL DISPLAY EMPLOYING THE SAME - A method of compensating performance of a thin film transistor including a gate electrode, source and drain electrodes that are spaced apart from each other and insulated from the gate electrode, and an active layer to form a channel between the source and drain electrodes, includes applying a negative voltage to the gate electrode to compensate deterioration of the active layer. | 07-30-2009 |