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Itonaga
Kazuichiro Itonaga, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090098679 | CMOS SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME AS WELL AS DRIVE METHOD OF CMOS SOLID-STATE IMAGING DEVICE - A CMOS solid-state imaging device configured to restrain the occurrence of white spots and dark current caused by pixel defects, and also to increase the saturation signal amount. | 04-16-2009 |
| 20100288911 | SOLID-STATE IMAGING DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE - A solid state imaging device that includes a semiconductor substrate having a plurality of photodiodes thereon and a first wiring portion, a second wiring portion and a third wiring portion, a first wiring layer over the semiconductor substrate and which includes a plurality of metal films and extends across all the wiring portions, and a second wiring layer over the first wiring layer and which extends across the first wiring portion and the second wiring portion. | 11-18-2010 |
Kazunobu Itonaga, Kyoto JP
| Patent application number | Description | Published |
|---|---|---|
| 20090151478 | ARRAY TYPE CAPACITANCE SENSOR - In an array type capacitance sensor ( | 06-18-2009 |
Kazunobu Itonaga, Takatsuki-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20120095353 | PULSE WAVE ANALYSIS DEVICE AND RECORDING MEDIUM - A pulse wave analysis device stores a pulse waveform for multiple beats, and calculates a pulse wave analysis index by analyzing the pulse waveform for multiple beats. In the calculation of the pulse wave analysis index, pulse waveform shapes of each beat that constitute the pulse waveform for multiple beats are integrated, and beats for which a degree of approximation between the integrated pulse waveform shape and the pulse waveform shape of the beat is low are excluded as targets of calculation of the pulse wave analysis index. | 04-19-2012 |
Makoto Itonaga, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20120002712 | EQUALIZER AND EQUALIZATION METHOD - A linear equalizer unit sequentially subjects a signal to be processed to linear equalization. A temporary decision unit sequentially subjects a signal subjected to linear equalization by the linear equalizer unit to temporary decision. A nonlinear equalizer unit derives a plurality of coefficients using a signal subjected to temporary decision as a teacher signal and sequentially subject a signal subjected to linear equalization by the linear equalizer unit to nonlinear equalization based on the plurality of coefficients. | 01-05-2012 |
Masafumi Itonaga, Watarai-Gun JP
| Patent application number | Description | Published |
|---|---|---|
| 20080210530 | AUTOMATIC TRANSMISSION SWITCH - An automatic transmission switch includes a fixed member provided with a fixed-side contact, and a movable member provided with a movable-side contact. The movable-side contact includes an intermittent contact portion with respect to the fixed-side contact. The contact portion extends along a moving direction of the movable member. The movable member is connected to an automatic transmission, and if the movable member is turned according to a switching operation of a shift lever, the movable member brings the fixed-side contact and the movable-side contact into contact with each other and separates them from each other. The movable-side contact is fixed to the movable member. The fixed member is provided with a coil spring which biases the fixed-side contact toward the movable-side contact. | 09-04-2008 |
Shuji Itonaga, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20120100695 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device according to one embodiment includes attaching a front-side protecting member to a first main surface of a semiconductor wafer having an element region formed therein; laser-dicing the semiconductor wafer by applying a laser beam from a second main surface opposite to the first main surface of the semiconductor wafer; forming a backside metal film on the second main surface of the semiconductor wafer; and pressing a spherical surface against the front-side protecting member to expand the front-side protecting member and form individually divided semiconductor chips having the backside metal film attached thereto. | 04-26-2012 |