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| 20090240422 | INTERNAL EGR CONTROL DEVICE FOR INTERNAL COMBUSTION ENGINE - An internal EGR control device for an internal combustion engine, which is capable of properly controlling an internal EGR amount, while causing conditions of burned gases to be reflected thereon in controlling the internal EGR by changing valve-closing timing of an exhaust valve. An internal EGR control device sets a target internal EGR amount EGRINCMD as a target of the internal EGR amount according to detected operating conditions of an internal combustion engine, and a target internal EGR amount EGRINC is determined by correcting the target internal EGR amount based on a gas state equation, using obtained temperature and pressure of exhaust gases, and a calculated gas constant R. Then, according to the corrected target internal EGR amount EGRINC, the valve-closing timing of an exhaust valve is calculated, and a variable valve mechanism is controlled based on the calculated valve-closing timing of the exhaust valve. | 09-24-2009 |
| 20100242930 | INTERNAL EGR CONTROL SYSTEM FOR INTERNAL COMBUSTION ENGINE - There is provided an internal EGR control system for an internal combustion engine, which is capable of ensuring an excellent combustion state by properly controlling an internal EGR amount. The internal EGR control system is comprised of a variable valve operating mechanism | 09-30-2010 |
| 20100269801 | CONTROL SYSTEM FOR INTERNAL COMBUSTION ENGINE - To provide a control system for an internal combustion engine, which is capable of providing a stable intake air amount through reduction of pumping loss and blow-back of combustion gases by appropriately controlling the valve-opening timing of the intake valves, and thereby being capable of securing excellent drivability. In the control system | 10-28-2010 |
| 20100274463 | IGNITION TIMING CONTROL SYSTEM FOR INTERNAL COMBUSTION ENGINE - To provide an ignition timing control system for an internal combustion engine, which is capable of ensuring stable combustion without causing a misfire or knocking, by properly setting ignition timing in the compression stroke injection mode, thereby making it possible to improve drivability. The ignition timing control system for the engine | 10-28-2010 |
| 20110017157 | INTERNAL EGR CONTROL DEVICE FOR INTERNAL COMBUSTION ENGINE - There is provided an internal EGR control device for an internal combustion engine, which, even when a change in the actual valve timing of exhaust valves is caused by aging, is capable of properly controlling an internal EGR amount while compensating for an adverse influence caused by the change, and thereby properly controlling the temperature within the cylinder. The internal EGR control device | 01-27-2011 |
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| 20090095956 | SINGLE-CRYSTAL SILICON SUBSTRATE, SOI SUBSTRATE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device of the present invention is arranged in such a manner that a MOS non-single-crystal silicon thin-film transistor including a non-single-crystal silicon thin film made of polycrystalline silicon, a MOS single-crystal silicon thin-film transistor including a single-crystal silicon thin film, and a metal wiring are provided on an insulating substrate. With this arrangement, (i) a semiconductor device in which a non-single-crystal silicon thin film and a single-crystal silicon thin-film device are formed and high-performance systems are integrated, (ii) a method of manufacturing the semiconductor device, and (iii) a single-crystal silicon substrate for forming the single-crystal silicon thin-film device of the semiconductor device are obtained. | 04-16-2009 |
| 20090206495 | Semiconductor Device and Method for Manufacturing Same - A semiconductor device wherein a force of peeling a chip from a substrate does not operate even the semiconductor device is exposed under a high temperature condition after bonding and a bonding state of the substrate and the chip can be maintained, and a method for manufacturing such semiconductor device are provided. Specifically, in the semiconductor manufacture, a recessed alignment mark is formed on a front plane of a high distortion point glass substrate as a target for alignment for bonding, and the recessed alignment mark is permitted to have a shape which extends to an external side of the semiconductor device. Thus, excellent bonding between the high distortion point glass substrate and the semiconductor device can be provided, and at the same time, since the recessed alignment mark is not sealed, the bonding state can be maintained even when the high distortion point glass substrate is exposed under the high temperature condition after bonding the semiconductor device. | 08-20-2009 |
| 20090269907 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are formed. Then this SOI substrate is bonded with an insulating substrate. Subsequently, the SOI substrate is cleaved at the hydrogen ion implantation section by carrying out heat treatment, so that an unnecessary part of the SOI substrate is removed, Furthermore, the BOX layer remaining on the single-crystal silicon thin-film transistor is removed by etching. With this, it is possible to from a single-crystal silicon thin-film device on an insulating substrate, without using an adhesive. Moreover, it is possible to provide a semiconductor device which has no surface damage and includes a single-crystal silicon thin film which is thin and uniform in thickness. | 10-29-2009 |
| 20100019242 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, SOI SUBSTRATE AND DISPLAY DEVICE USING THE SAME, AND MANUFACTURING METHOD OF THE SOI SUBSTRATE - A polycrystalline Si thin film and a single crystal Si thin film are formed on an SiO | 01-28-2010 |
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| 20080296583 | Display Device And Manufacturing Method of The Same - A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode. | 12-04-2008 |
| 20090061575 | Display device and fabrication method thereof - The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO | 03-05-2009 |
| 20090073149 | Display device - The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed. | 03-19-2009 |
| 20090261329 | DISPLAY DEVICE - Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×10 | 10-22-2009 |
