Patent application number | Description | Published |
20090096049 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 04-16-2009 |
20100060758 | SOLID-STATE IMAGING DEVICE AND METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes a sensor including an impurity diffusion layer provided in a surface layer of a semiconductor substrate; and an oxide insulating film containing carbon, the oxide insulating film being provided on the sensor. | 03-11-2010 |
20100148274 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device including an N-channel insulated gate field effect transistor and a P-channel insulated gate field effect transistor, the device having: a first insulating layer and a second insulating layer; and gate electrode contact plugs. Each of the gate electrodes of the N-channel insulated gate field effect transistor and the P-channel insulated gate field effect transistor is buried in a gate electrode formation opening provided in the first insulating layer. | 06-17-2010 |
20100200942 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 08-12-2010 |
20100203669 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 08-12-2010 |
20110089312 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 04-21-2011 |
20110089313 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 04-21-2011 |
20130200479 | SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - There is provided a solid-state imaging device including a pixel array portion in which multiple unit pixels are arranged on a semiconductor substrate, the multiple unit pixels each including a photoelectric conversion portion generating and accumulating a light charge based on a quantity of received light and a charge accumulation portion accumulating the light charge, wherein at least part of an electrode closer to an incidence side on which light enters the unit pixel of the charge accumulation portion, is formed with a metal film functioning as a light blocking film. | 08-08-2013 |
20130256821 | SOLID-STATE IMAGING ELEMENT, METHOD OF MANUFACTURING THE SAME, SOLID-STATE IMAGING APPARATUS, AND IMAGING APPARATUS - A solid-state imaging element including a semiconductor substrate that has a light reception portion performing a photoelectric conversion of an incident light; an oxide layer that is formed on a surface of the semiconductor substrate; a light shielding layer that is formed on an upper layer further than the oxide layer via an adhesion layer; and an oxygen supply layer that is disposed between the oxide layer and the adhesion layer and is formed of a material which shows an oxidation enthalpy smaller than that of a material forming the oxide layer. | 10-03-2013 |
20140054662 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE - The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate | 02-27-2014 |
Patent application number | Description | Published |
20100224946 | SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - An embodiment of the invention provides a solid-state image pickup element, including: a semiconductor layer having a photodiode, photoelectric conversion being carried out in the photodiode; a silicon oxide film formed on the semiconductor layer in a region having at least the photodiode by using plasma; and a film formed on the silicon oxide film and having negative fixed charges. | 09-09-2010 |
20110025872 | SOLID-STATE IMAGE PICKUP ELEMENT AND A METHOD OF MANUFACTURING THE SAME, AND IMAGE PICKUP DEVICE INCLUDING THE SAME - Disclosed herein is a solid-state image pickup element, including: a semiconductor layer in which a photodiode for carrying out photoelectric conversion is formed; a first film containing negative fixed charges and formed on the semiconductor layer in a region in which at least the photodiode is formed by utilizing either an atomic layer deposition method or a metal organic chemical vapor deposition method; a second film containing the negative fixed charges and formed on the first film containing therein the negative fixed charges by utilizing a physical vapor deposition method; and a third film containing the negative fixed charges and formed on the second film containing therein the negative fixed charges by utilizing either the atomic layer deposition method or the metal organic chemical vapor deposition method. | 02-03-2011 |
20110031376 | SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - A solid-state image pickup element | 02-10-2011 |
20120249847 | SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - An embodiment of the invention provides a solid-state image pickup element, including: a semiconductor layer having a photodiode, photoelectric conversion being carried out in the photodiode; a silicon oxide film formed on the semiconductor layer in a region having at least the photodiode by using plasma; and a film formed on the silicon oxide film and having negative fixed charges. | 10-04-2012 |
20130200252 | SOLID-STATE IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING THE SAME, AND IMAGE PICKUP APPARATUS INCLUDING THE SAME - A solid-state image pickup element | 08-08-2013 |