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Itahashi, JP
Hiroaki Itahashi, Shizuoka JP
| Patent application number | Description | Published |
|---|---|---|
| 20110043074 | STEPPING MOTOR - A stepping motor includes a rotor assembly and a stator assembly including two stator units axially coupled to each other. The two stator units each include a pair of yokes which each include a base portion and a plurality of pole teeth extending from the base portion and which are disposed such that each of the pole teeth of one yoke and each of the pole teeth of the other yoke are arranged alternately in the circumferential direction. The pole teeth are shaped symmetric and each include a pair of slant sides inclined so as to become closer to each other with an increase of distance from the base portion, and the slant sides of adjacent pole teeth are located close to each other wherein a magnetic pole gap between the adjacent pole teeth pole teeth is about 0.2 times as large as the thickness of the pole teeth. | 02-24-2011 |
Masatsugu Itahashi, Atsugi-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090136174 | PHOTOELECTRIC CONVERSION DEVICE AND FABRICATION METHOD THEREFOR - A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger than an area of the second cross-section surface, so as to guide an incident light into the photoelectric conversion element without reflection. | 05-28-2009 |
| 20110003426 | PHOTOELECTRIC CONVERSION DEVICE METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE AND IMAGE PICKUP SYSTEM - A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor. | 01-06-2011 |
| 20110157447 | PHOTOELECTRIC CONVERSION DEVICE METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE AND IMAGE PICKUP SYSTEM - A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor. | 06-30-2011 |
Masatsugu Itahashi, Yokohama-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090130782 | METHOD AND LINE FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method is provided for manufacturing a semiconductor device that includes a multilayer wiring structure in which insulating layers and wiring layers each with a plurality of conductor lines are alternately stacked on each other. The method includes steps of forming a first wiring layer on a first insulating layer, detecting a defect in the first wiring layer on the first insulating layer, and determining whether or not the defect is to be irradiated with a focused ion beam, according to a detection result. If it is determined that the defect is to be irradiated, the defect is irradiated with a focused ion beam and then a second insulating layer is formed on the first wiring layer disposed on the first insulating layer. If it is determined that the defect is not to be irradiated with a focused ion beam, the second insulating layer is formed on the first wiring layer disposed on the first insulating layer without irradiating the defect. | 05-21-2009 |
| 20100055825 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method for manufacturing a semiconductor device that includes a semiconductor substrate, the method comprises: a first irradiation step of irradiating a first irradiated region with a focused ion beam so as to selectively remove a first portion corresponding to the first irradiated region of the wiring pattern, the first irradiated region being positioned on an inner side of a short defect portion of the wiring pattern in a direction along a plane parallel to the principal surface; and a second irradiation step of, after the first irradiation step, irradiating a second irradiated region with a focused ion beam so as to remove a second portion corresponding to the second irradiated region of the wiring pattern, the second irradiated region including a region that is positioned on an outer side of the short defect portion in the direction along the plane parallel to the principal surface. | 03-04-2010 |
| 20100176272 | PHOTOELECTRIC CONVERSION DEVICE, IMAGE CAPTURING SYSTEM, AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device includes a photoelectric conversion unit which is arranged in a semiconductor substrate, a charge holding portion which is arranged in the semiconductor substrate and temporarily holds a charge generated by the photoelectric conversion unit, a first transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge generated by the photoelectric conversion unit to the charge holding portion, a charge-voltage converter which is arranged in the semiconductor substrate and converts a charge into a voltage, and a second transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge held by the charge holding portion to the charge-voltage converter, and the first transfer electrode is arranged to cover the charge holding portion, and not to overlap the second transfer electrode when viewed from a direction perpendicular to the upper surface of the semiconductor substrate. | 07-15-2010 |
Takahisa Itahashi, Osaka JP
| Patent application number | Description | Published |
|---|---|---|
| 20100060206 | FAST ELECTROMAGNET DEVICE - A fast electromagnet device ( | 03-11-2010 |
Tamon Itahashi, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20090103241 | Electric Double-Layer Capacitor - An activated carbon comprising a carbonized and activated compound represented by the formula (1): | 04-23-2009 |