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| 20080257863 | PLASMA PROCESSING APPARATUS AND METHOD FOR STABILIZING INNER WALL OF PROCESSING CHAMBER - A plasma processing apparatus is disclosed for removing the deposition film in the processing chamber and suppressing the corrosion of wall surface material. The plasma processing apparatus includes a plasma generating means, a monitor means for detecting the existence of a reaction product containing a material constituting an inner wall of the processing chamber, and an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall of the processing chamber has exceeded a predetermined amount. The plasma processing apparatus is configured such that plasma cleaning is performed for every arbitrary etching process, and a wall surface stabilization process is subsequently performed using O | 10-23-2008 |
| 20090105980 | PLASMA PROCESSING APPARATUS AND METHOD FOR DETECTING STATUS OF SAID APPARATUS - The invention provides a method for detecting and managing the status of a plasma processing apparatus with high sensitivity so as to enable long-term stable processing. In a plasma processing apparatus comprising a vacuum processing chamber | 04-23-2009 |
| 20090152241 | PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD - The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed. | 06-18-2009 |
| 20100258529 | Plasma Processing Apparatus and Plasma Processing Method - The invention provides a plasma processing apparatus comprising a means for detecting the apparatus condition related to the ion flux quantity of plasma (plasma density) and the distribution thereof for to stabilizing mass production and minimizing apparatus differences. The plasma processing apparatus comprises a vacuum reactor | 10-14-2010 |
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| 20100028773 | Composition for battery - A composition for a battery containing an electroconductive assistant improves battery performance of a battery produced using this composition as a result of achieving dispersion stabilization without inhibiting electroconductivity of the electroconductive assistant. The invention provides a composition for a battery comprising at least one type of dispersant selected from an organic pigment derivative having an acidic functional group(s) or a triazine derivative having an acidic functional group(s), a carbon material as an electroconductive assistant, and as necessary, a solvent, a binder and a positive electrode active substance or negative electrode active substance; and also provides a lithium secondary battery comprising a positive electrode having a positive electrode composite layer on a current collector, a negative electrode having a negative electrode composite layer on a current collector, an electrolyte containing lithium, and as necessary, an electrode foundation layer, wherein the positive electrode composite layer, the negative electrode composite layer or the electrode foundation layer is formed using the composition for a battery described above. | 02-04-2010 |
| 20100233532 | Composition for battery - A composition for a battery containing an electroconductive assistant improves battery performance of a battery produced using this composition as a result of achieving dispersion stabilization without inhibiting electroconductivity of the electroconductive assistant. The invention provides a composition for a battery comprising at least one type of dispersant selected from an organic pigment derivative having an acidic functional group(s) or a triazine derivative having an acidic functional group(s), a carbon material as an electroconductive assistant, and as necessary, a solvent, a binder and a positive electrode active substance or negative electrode active substance; and also provides a lithium secondary battery comprising a positive electrode having a positive electrode composite layer on a current collector, a negative electrode having a negative electrode composite layer on a current collector, an electrolyte containing lithium, and as necessary, an electrode foundation layer, wherein the positive electrode composite layer, the negative electrode composite layer or the electrode foundation layer is formed using the composition for a battery described above. | 09-16-2010 |
| 20110159360 | Composition for battery - The object is to stabilize the dispersion of a conductive additive in a composition for a battery without deteriorating the conducting property of the conductive additive, and to thereby improve the battery performance of a battery produced by using the composition. Disclosed is a composition for a battery, which comprises: at least one dispersing agent selected from an organic dye derivative having a basic functional group, an anthraquinone derivative having a basic functional group, an acridone derivative having a basic functional group and a triazine derivative having a basic functional group; a carbon material as a conductive additive; and optionally an acid, a solvent, a binder, and a positive electrode active material or a negative electrode active material. Also disclosed is a lithium secondary battery comprising: a positive electrode comprising a collector and a composite positive electrode material layer arranged on the collector; a negative electrode comprising a collector and a composite negative electrode material layer arranged on the collector; an electrolyte containing lithium; and optionally an electrode under layer, wherein the composite positive electrode material layer, the composite negative electrode material layer or the electrode under layer is formed by using the composition. | 06-30-2011 |
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| 20090137129 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method is provided for manufacturing a semiconductor device having a heat-resistant resin film with flip-chip connection structure using a solder bump or a gold bump and an epoxy resin compound laminated thereon, in which adhesiveness is improved particularly after exposure to high temperature and high humidity environments for a long period of time, thereby enhancing the reliability of the semiconductor device. The method, in accordance with the present invention, for manufacturing a semiconductor device having a heat-resistant resin film formed on a semiconductor element and an epoxy resin compound layer laminated thereon, comprises the steps of carrying out a plasma treatment on a surface of the heat-resistant resin film on which the epoxy resin compound layer is laminated using a nitrogen atom-containing gas containing at least one of nitrogen, ammonia, and hydrazine. | 05-28-2009 |
| 20090189254 | CIRCUIT CONNECTION STRUCTURE, METHOD FOR PRODUCING THE SAME AND SEMICONDUCTOR SUBSTRATE FOR CIRCUIT CONNECTION STRUCTURE - A circuit connection structure that exhibits excellent adhesiveness between a heat resistant resin film and a circuit adhesive member, even under high temperature and high humidity, is provided by introducing a chemically stable functional group into the heat resistant resin film by additional surface treatment to improve adhesiveness. In a circuit connection structure, a semiconductor substrate and a circuit member are adhered by a circuit adhesive member sandwiched therewith. First circuit electrode on the semiconductor substrate and second circuit electrode on the circuit member are connected electrically by conductive particles in the circuit adhesive member. A surface modification is given to the semiconductor substrate by plasma treatment using gas containing nitrogen, ammonia and the like. Therefore, the heat resistant resin film on the semiconductor substrate and the circuit adhesive member are firmly adhered for a long period of time even under high temperature and high humidity. | 07-30-2009 |
