| Patent application number | Description | Published |
|---|
| 20090158994 | METHOD FOR GROWING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND GROWING DEVICE FOR GROUP III NITRIDE SEMICONDUCTOR CRYSTAL - A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a material | 06-25-2009 |
| 20100033806 | Wavelength Converter Manufacturing Method and Wavelength Converter - Affords a wavelength converter manufacturing method and a wavelength converter whereby the transmissivity can be improved. A method of manufacturing a wavelength converter ( | 02-11-2010 |
| 20100209622 | Thin Film of Aluminum Nitride and Process for Producing the Thin Film of Aluminum Nitride - Flat, thin AlN membranes and methods of their manufacture are made available. | 08-19-2010 |
| 20100242833 | AlN Crystal and Method of Its Growth - The present invention makes available an AlN crystal growth method enabling large-area, thick AlN crystal to be stably grown. An AlN crystal growth method of the present invention is provided with a step of preparing an SiC substrate ( | 09-30-2010 |
| 20100319614 | Compound Semiconductor Single-Crystal Manufacturing Device and Manufacturing Method - A compound semiconductor single-crystal manufacturing device ( | 12-23-2010 |
| 20110042684 | Method of Growing AlN Crystals, and AlN Laminate - Affords an AlN crystal growth method, and an AlN laminate, wherein AlN of favorable crystalline quality is grown. The AlN crystal growth method is provided with the following steps. To begin with, a source material ( | 02-24-2011 |
| 20110076453 | AlxGa1-xN Single Crystal and Electromagnetic Wave Transmission Body - Affords an Al | 03-31-2011 |
| 20110171462 | Nitride Semiconductor Crystal Manufacturing Apparatus, Nitride Semiconductor Crystal Manufacturing Method, and Nitride Semiconductor Crystal - Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available. | 07-14-2011 |
