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Isoo

Akihiro Isoo, Tochigi JP

Patent application numberDescriptionPublished
20090231471CORRECTION APPROXIMATING STRAIGHT LINE GROUP INFORMATION GENERATING METHOD OF MULTI-DIVIDED READING CCD, AND CORRECTION PROCESSING DEVICE MANUFACTURING METHOD OF MULTI-DIVIDED READING CCD - To make it possible to cope with an error in a hue or the like in the case of using such a CCD of lower quality or an analog circuit of lower quality as might otherwise raise a problem in the hue, a correction approximating straight line group information creating method/apparatus of a multi-divided reading CCD and a correction processing device manufacturing method/apparatus of a multi-divided reading CCD generate correction approximating straight line group information for one real shot optimum for corrections, at an adjusting stage from a plurality of pieces of primary correction approximating straight line group information generated in advance. At the shooting time, therefore, all pixels can be corrected for their individual kinds by making use of the correction approximating straight line group information for one real shot.09-17-2009

Jiro Isoo, Tsuruga JP

Patent application numberDescriptionPublished
20080239195Display device - A display device 10-02-2008

Yosuke Isoo, Fukuoka JP

Patent application numberDescriptionPublished
20080283727Solid-state imaging device and imaging apparatus - There is provided a solid-state imaging device, including: a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion portion, formed therein; and a laminated film formed on said semiconductor substrate; wherein said laminated film includes a hydrogen desorbing film for desorbing hydrogen, and a hydrogen blocking-off film disposed so as to overlie said hydrogen desorbing film.11-20-2008
20090278031Solid-state imaging device and imaging apparatus - There is provided a solid-state imaging device, including: a semiconductor substrate having a plurality of pixels, each having a photoelectric conversion portion, formed therein; and a laminated film formed on said semiconductor substrate; wherein said laminated film includes a hydrogen desorbing film for desorbing hydrogen, and a hydrogen blocking-off film disposed so as to overlie said hydrogen desorbing film.11-12-2009