Patent application number | Description | Published |
20110147745 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - An embodiment is a thin film transistor which includes a gate electrode layer, a gate insulating layer provided so as to cover the gate electrode layer; a first semiconductor layer entirely overlapped with the gate electrode layer; a second semiconductor layer provided over and in contact with the first semiconductor layer and having a lower carrier mobility than the first semiconductor layer; an impurity semiconductor layer provided in contact with the second semiconductor layer; a sidewall insulating layer provided so as to cover at least a sidewall of the first semiconductor layer; and a source and drain electrode layers provided in contact with at least the impurity semiconductor layer. The second semiconductor layer may consist of parts which are apart from each other over the first semiconductor layer. | 06-23-2011 |
20110312127 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing a semiconductor device including an oxide semiconductor and having improved electric characteristics. The semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The method includes the steps of forming a first insulating film including gallium oxide over and in contact with the oxide semiconductor film; forming a second insulating film over and in contact with the first insulating film; forming a resist mask over the second insulating film; forming a contact hole by performing dry etching on the first insulating film and the second insulating film; removing the resist mask by ashing using oxygen plasma; and forming a wiring electrically connected to at least one of the gate electrode, the source electrode, and the drain electrode through the contact hole. | 12-22-2011 |
20120061670 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Described is a method for manufacturing a semiconductor device. A mask is formed over an insulating film and the mask is reduced in size. An insulating film having a projection is formed using the mask reduced in size, and a transistor whose channel length is reduced is formed using the insulating film having a projection. Further, in manufacturing the transistor, a planarization process is performed on a surface of a gate insulating film which overlaps with a top surface of a fine projection. Thus, the transistor can operate at high speed and the reliability can be improved. In addition, the insulating film is processed into a shape having a projection, whereby a source electrode and a drain electrode can be formed in a self-aligned manner. | 03-15-2012 |
20120267623 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device having a transistor including an oxide semiconductor film is disclosed. In the semiconductor device, the oxide semiconductor film is provided along a trench formed in an insulating layer. The trench includes a lower end corner portion and an upper end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, the upper end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the upper end corner portion. | 10-25-2012 |
20120267624 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF - An insulating layer is provided with a projecting structural body, and a channel formation region of an oxide semiconductor layer is provided in contact with the projecting structural body, whereby the channel formation region is extended in a three dimensional direction (a direction perpendicular to a substrate). Thus, it is possible to miniaturize a transistor and to extend an effective channel length of the transistor. Further, an upper end corner portion of the projecting structural body, where a top surface and a side surface of the projecting structural body intersect with each other, is curved, and the oxide semiconductor layer is formed to include a crystal having a c-axis perpendicular to the curved surface. | 10-25-2012 |
20120270375 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a semiconductor device which prevents defects and achieves miniaturization. A projecting portion or a trench (a groove portion) is formed in an insulating layer and a channel formation region of a semiconductor layer is provided in contact with the projecting portion or the trench, so that the channel formation region is extended in a direction perpendicular to a substrate. Thus, miniaturization of the transistor can be achieved and an effective channel length can be extended. In addition, before formation of the semiconductor layer, an upper-end corner portion of the projecting portion or the trench with which the semiconductor layer is in contact is subjected to round chamfering, so that a thin semiconductor layer can be formed with good coverage. | 10-25-2012 |
20120286261 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a transistor including a wide band gap semiconductor layer as a semiconductor layer, a wide band gap semiconductor layer is separated into an island shape by an insulating layer with passivation properties for preventing atmospheric components from permeating. The edge portion of the island shape wide band gap semiconductor layer is in contact with the insulating film; thus, moisture or atmospheric components can be prevented from entering from the edge portion of the semiconductor layer to the wide band gap semiconductor layer. | 11-15-2012 |
20130011961 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device having excellent characteristics, in which a channel layer includes an oxide semiconductor with high crystallinity. In addition, a semiconductor device including a base film with improved planarity is provided. CMP treatment is performed on the base film of the transistor and plasma treatment is performed thereon after the CMP treatment, whereby the base film can have a center line average roughness Ra | 01-10-2013 |
20130020575 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a miniaturized semiconductor device with stable electric characteristics in which a short-channel effect is suppressed. Further, to provide a manufacturing method of the semiconductor device. The semiconductor device (transistor) including a trench formed in an oxide insulating layer, an oxide semiconductor film formed along the trench, a source electrode and a drain electrode which are in contact with the oxide semiconductor film, a gate insulating layer over the oxide semiconductor film, a gate electrode over the gate insulating layer is provided. The lower corner portions of the trench are curved, and the side portions of the trench have side surfaces substantially perpendicular to the top surface of the oxide insulating layer. Further, the width between the upper ends of the trench is greater than or equal to 1 time and less than or equal to 1.5 times the width between the side surfaces of the trench. | 01-24-2013 |
20130075732 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A miniaturized transistor having high electric characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity are achieved. In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, source and drain electrode layers are provided in contact with the oxide semiconductor film and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive film and an interlayer insulating film are stacked to cover the oxide semiconductor film, the sidewall insulating layers, and the gate electrode layer, and the interlayer insulating film and the conductive film over the gate electrode layer are removed by a chemical mechanical polishing method, so that the source and drain electrode layers are formed. | 03-28-2013 |
20130092925 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A miniaturized transistor is provided with high yield. Further, a semiconductor device which has high on-state characteristics and which is capable of high-speed response and high-speed operation is provided. In the semiconductor device, an oxide semiconductor layer, a gate insulating layer, a gate electrode layer, an insulating layer, a conductive film, and an interlayer insulating layer are stacked in this order. A source electrode layer and a drain electrode layer are formed in a self-aligned manner by cutting the conductive film so that the conductive film over the gate electrode layer and the conductive layer is removed and the conductive film is divided. An electrode layer which is in contact with the oxide semiconductor layer and overlaps with a region in contact with the source electrode layer and the drain electrode layer is provided. | 04-18-2013 |
20140051209 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Described is a method for manufacturing a semiconductor device. A mask is formed over an insulating film and the mask is reduced in size. An insulating film having a projection is formed using the mask reduced in size, and a transistor whose channel length is reduced is formed using the insulating film having a projection. Further, in manufacturing the transistor, a planarization process is performed on a surface of a gate insulating film which overlaps with a top surface of a fine projection. Thus, the transistor can operate at high speed and the reliability can be improved. In addition, the insulating film is processed into a shape having a projection, whereby a source electrode and a drain electrode can be formed in a self-aligned manner. | 02-20-2014 |
20140127868 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A miniaturized transistor is provided with high yield. Further, a semiconductor device which has high on-state characteristics and which is capable of high-speed response and high-speed operation is provided. In the semiconductor device, an oxide semiconductor layer, a gate insulating layer, a gate electrode layer, an insulating layer, a conductive film, and an interlayer insulating layer are stacked in this order. A source electrode layer and a drain electrode layer are formed in a self-aligned manner by cutting the conductive film so that the conductive film over the gate electrode layer and the conductive layer is removed and the conductive film is divided. An electrode layer which is in contact with the oxide semiconductor layer and overlaps with a region in contact with the source electrode layer and the drain electrode layer is provided. | 05-08-2014 |
20150084049 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a method for manufacturing a semiconductor device including an oxide semiconductor and having improved electric characteristics. The semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The method includes the steps of forming a first insulating film including gallium oxide over and in contact with the oxide semiconductor film; forming a second insulating film over and in contact with the first insulating film; forming a resist mask over the second insulating film; forming a contact hole by performing dry etching on the first insulating film and the second insulating film; removing the resist mask by ashing using oxygen plasma; and forming a wiring electrically connected to at least one of the gate electrode, the source electrode, and the drain electrode through the contact hole. | 03-26-2015 |
Patent application number | Description | Published |
20090061573 | Methods for manufacturing thin film transistor and display device - The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias. | 03-05-2009 |
20090246953 | Method for Manufacturing Semiconductor Device - It is an object of the present invention to provide a semiconductor device including a wiring having a preferable shape. A manufacturing method includes the steps of forming a first conductive layer connected to an element and a second conductive layer thereover; forming a resist mask over the second conductive layer; processing the second conductive layer by dry etching with the use of the mask; and processing the first conductive layer by wet etching with the mask left, wherein the etching rate of the second conductive layer is higher than that of the first conductive layer in the dry etching, and wherein the etching rate of the second conductive layer is the same as or more than that of the first conductive layer in the wet etching. | 10-01-2009 |
20100047997 | METHOD FOR MANUFACTURING SOI SUBSTRATE - It is an object of the preset invention to increase adhesiveness of a semiconductor layer and a base substrate and to reduce defective bonding. An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide film, whereby an embrittled region is formed at a predetermined depth from a surface of the semiconductor substrate. Plasma treatment is performed on the oxide film on the semiconductor substrate and the base substrate by applying a bias voltage, the surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other, a surface of the oxide film is bonded to the surface of the base substrate, heat treatment is performed after the surface of the oxide film is bonded to the surface of the base substrate, and separation is caused along the embrittled region, whereby a semiconductor layer is formed over the base substrate with the oxide film interposed therebetween. | 02-25-2010 |
20100062556 | METHODS FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE - The present invention provides a method for manufacturing a thin film transistor with small leakage current and high switching characteristics. In a method for manufacturing a thin film transistor, a back channel portion is formed in the thin film transistor by conducting etching using a resist mask, the resist mask is removed by removal or the like, and a superficial part of the back channel portion is further etched. Through the steps, components of chemical solution used for the removal, residues of the resist mask, and the like which exist at the superficial part of the back channel portion can be removed and leakage current can be reduced. The further etching step of the back channel portion is preferably conducted by dry etching using an N | 03-11-2010 |
20130095587 | METHODS FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE - The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias. | 04-18-2013 |
20130280867 | METHODS FOR MANUFACTURING THIN FILM TRANSISTOR AND DISPLAY DEVICE - The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias. | 10-24-2013 |
Patent application number | Description | Published |
20100289549 | ANALOG SCAN CIRCUIT, ANALOG FLIP-FLOP, AND DATA PROCESSING APPARATUS - Observability and controllability in a test of an analog LSI are increased. Analog signals input from input terminals IN | 11-18-2010 |
20110204920 | INTERFACE CIRCUIT, ANALOG FLIP-FLOP, AND DATA PROCESSOR - On an interface between LSIs, boards, devices (units), and others, the data transfer efficiency per signal line is improved. A shift circuit | 08-25-2011 |
20120274529 | ANTENNA - An antenna is realized by a simple mechanism without use of a dedicated antenna element. An antenna includes a first conductor | 11-01-2012 |
20140009879 | INPUT/OUTPUT APPARATUS - There is provided an input/output apparatus. Among information terminals of an input/output connector provided in an information terminal device, at least one information terminal of information terminals to switch an internal operation of the information terminal device is used also as an antenna input terminal. | 01-09-2014 |
20150040166 | CONTROL DEVICE, CONTROL METHOD, PROGRAM, AND CONTROL SYSTEM - Provided is a control device including a detector configured to detect use of an application on a communication terminal, and a controller configured to control recording processing related to content that is being output from a content output device associated with the communication terminal in accordance with a detection result obtained by the detector. | 02-05-2015 |
20150055020 | INPUT/OUTPUT APPARATUS - Provided is an input/output apparatus including information terminals for an input/output connector provided in an information terminal device, at least one of the information terminals including both a function as a standard information terminal based on a general-purpose interface standard and a function as an antenna input terminal. | 02-26-2015 |
Patent application number | Description | Published |
20090039594 | IMAGE FORMING APPARATUS - An image reading apparatus includes a sheet feeding unit configured to sequentially feed a plurality of documents loaded on a document positioning plate, a reading sensor arranged in a conveyance path configured to read a document of the plurality of documents fed by the sheet feeding unit, an acquisition unit configured to acquire an interval of the document between a trailing edge of a preceding document and a leading edge of a next document conveyed through the conveyance path, and a reading unit configured to execute a first reading mode using the reading sensor to read the document conveyed at a first conveyance speed, and a second reading mode using the reading sensor to read the document conveyed at a second conveyance speed that is lower than the first conveyance speed, wherein the reading unit executes the second reading mode after the first reading mode when the interval of the document is less than a predetermined interval. | 02-12-2009 |
20090040572 | IMAGE READING APPARATUS - An image reading apparatus includes a document reading and conveying unit, a pressing plate capable of moving to a position to press a document against a reading surface and to a position withdrawn from the reading surface, and a fixed reader configured to read a document fixed on the reading surface by moving a close-coupled image sensor relative to the document. The document reading and conveying unit includes a controller configured to perform pickup initialization of returning a pickup roller to an initial position after the completion of conveying one or more documents and is supported by the pressure plate. The controller includes a first timer configured to measure an elapsed time from the completion of reading performed by the fixed reader. The controller performs the pickup initialization after a measurement value measured by the first timer exceeds a first time. | 02-12-2009 |
20090302520 | IMAGE PROCESSING APPARATUS - The invention provides an image processing apparatus capable of stopping the transport of a sheet when an access cover is opened to prevent the damage of the sheet, without additionally providing a sensor. An image processing apparatus includes: a transport member for transporting a sheet through an image processing unit; a driving mechanism for transmitting a driving force to the transport member; an access cover for opening a portion of a sheet transport path; and a driving switching unit for transmitting the driving force of the driving mechanism or cuts off the transmission of the driving force in operative association with the opening or closing of the access cover. The driving switching unit cuts off the transmission of the driving force to the transport member when the access cover is opened. | 12-10-2009 |
20110310445 | IMAGE READING METHOD AND IMAGE READING APPARATUS - A method includes a first step, a second step, and a third step. In the first step, a fed document is returned to an upstream side of a reading unit by reversing the document after a first passage through the reading unit. In the second step, the document returned in the first step is returned to the upstream side of the reading unit by reversing the document after a second passage through the reading unit. In the third step, the document returned in the second step is passed through the reading unit, and then the document is discharged. | 12-22-2011 |
20130188230 | IMAGE FORMING APPARATUS - An image reading apparatus includes a sheet feeding unit configured to sequentially feed documents loaded on a document positioning plate, a reading sensor configured to read a document of the plurality of documents fed by the sheet feeding unit, an acquisition unit to acquire an interval of the document between a trailing edge of a preceding document and a leading edge of a next document conveyed through the conveyance path, and a reading unit to execute a first reading mode using the reading sensor to read the document conveyed at a first conveyance speed, and a second reading mode using the reading sensor to read the document conveyed at a second conveyance speed that is lower than the first conveyance speed, wherein the reading unit executes the second reading mode after the first reading mode when the interval of the document is less than a predetermined interval. | 07-25-2013 |
20130193635 | FEEDING APPARATUS - A feeding apparatus which is capable of increasing the number of stacked sheets without increasing a size of an apparatus is provided. The feeding apparatus includes a stopper member which is in contact with a leading edge of a sheet placed on a sheet stacking plate and blocks the sheet from entering a separation unit, and an actuating member which presses the stopper member in conjunction with a rotation of a holding member, and a movement distance of the actuating member is longer than a movement distance of the holding member. | 08-01-2013 |
20130194341 | CONVEYING DEVICE AND PRINTING APPARATUS - Provided are an image scanning device that can prevent a rise in the temperature and overloading or overheating of a conveying motor during continuous conveying of document sheets, and a conveying device that includes the image scanning device. According to the present invention, the temperature of a drive motor and the temperature of the periphery of the drive motor are predicted, and based on the predicted values, the conveying mode is selected. | 08-01-2013 |
20130194599 | READING APPARATUS - A reading apparatus includes an auto document feeder configured to be openable and closable around a hinge with respect to a unit including an image sensor. The auto document feeder includes a roller configured to move a document relative to the image sensor, a motor, a gear train configured to transmit a rotation of a rotational shaft of the motor to the roller, and an encoder unit configured to detect rotation information of the motor, and including a sensor and a code wheel. An orientation of the rotational shaft is substantially parallel to a rotational axis of the hinge, and the gear train is arrayed in a direction of an extension of the rotational shaft. A gear that is a part of the gear train is attached to one end of the rotational shaft, and the code wheel is attached to the other end thereof. | 08-01-2013 |
20130194600 | READING APPARATUS AND READING CONTROL METHOD - A reading apparatus includes an image sensor, a movement mechanism including a motor that relatively moves between a document and the image sensor, an encoder that detects information about the relative movement, and a control unit that controls driving of the motor and reading by the image sensor based on the detection by the encoder, wherein when a read-suspension event occurs during the reading, the control unit performs control such that the reading is continued while decelerating the motor, a relative position of a last read pixel with respect to a read position by the image sensor is monitored based on the detection by the encoder, and the driving of the motor is stopped when the read position is determined to reach a stop position set within the last read pixel, and the motor is driven again to resume the reading with a pixel next to the last read pixel. | 08-01-2013 |
20150055198 | IMAGE READING DEVICE AND IMAGE READING METHOD - An image reading device includes: a sensor unit; a first reading part at which the sensor unit reads a document through a first transparent member; a second reading part at which the sensor unit reads a document through a second transparent member different from the first transparent member; and a color reference, wherein measurement of the color reference is able to be performed through the first transparent member by the sensor unit for calibration for reading at the first reading part, and measurement of the color reference is able to be performed through the second transparent member by the sensor unit for calibration for reading at the second reading part. | 02-26-2015 |
Patent application number | Description | Published |
20090022812 | Liquid detergent composition - A liquid detergent composition containing (a) hydrogen peroxide or a compound for forming hydrogen peroxide in water, (b) a compound selected from boric acid, borax, a boric acid salt in an amount of from 0.05 to 1% by mass as a boron atom, (c) a compound having one or more sites, the site having one hydroxyl group at each of both sides of adjacent carbon atoms, in an amount of from 3 to 35% by mass, (d) a surfactant in an amount of from 4 to 45% by mass, and (e) water, wherein the molar ratio of the component (c)/the component (b) is from 1.5 to 2.7, and wherein the detergent composition has a pH at 20° C. of from 4.6 to 7.0. | 01-22-2009 |
20090249557 | Liquid Detergent Composition - The present invention relates to a liquid detergent composition containing (a) hydrogen peroxide or a compound forming hydrogen peroxide in water, 0.1 to 10 mass % of (b) a bleaching activator, 45 to 80 mass % of (c) a nonionic surfactant, (d) water, (e) at least one or more compounds selected from boric acid, borax and borate, and (f) a polyol compound, said liquid detergent composition having a pH value of 4 to 7 at 20° C. | 10-08-2009 |
20100308260 | LIQUID BLEACHING AGENT COMPOSITION - The present invention relates to a liquid bleaching agent composition containing (a) hydrogen peroxide, (b1) a nonionic surfactant, (b2) an anionic surfactant, (c) a bleaching activator, (d) at least one compound selected from boric acid, borax and a borate, and (e) a compound having one or more groups in which a hydroxyl group is present on each of the adjacent carbon atoms to each other, wherein the respective contents of component (b1), component (b2) and the mass ratio of component (b2) to component (b1) are all within a specific range and the composition has pH 2.5-4.5 at 20° C. | 12-09-2010 |
20110224126 | LIQUID DETERGENT COMPOSITION - The invention provides a liquid detergent composition containing (a) a nonionic surfactant obtained by adding ethylene oxide and an alkylene oxide with from 3 to 5 carbon atoms to a compound represented by R—OH (wherein R represents an alkyl group or an alkenyl group with from 8 to 18 carbon atoms) under a specified condition, (b) an anionic surfactant and (c) a water-miscible organic solvent in specified ratios, respectively. | 09-15-2011 |
20120010118 | LIQUID DETERGENT COMPOSITION - The present invention provides a liquid detergent composition containing the following components (a) to (c), wherein the total content of components (a) to (c), (a)+(b)+(c), is 40 to 90% by mass; a mass ratio of components (a) to (b), (a)/(b), is 25/75 to 90/10; and a mass ratio [(a)+(b)]/(c), is 95/5 to 70/30:
| 01-12-2012 |
Patent application number | Description | Published |
20090003879 | IMAGE FORMING APPARATUS - A fixing step before smoothing by a smoothing device causes the phenomenon that a photo-medium is not properly separated from a fixing device due to a toner receiving layer of the photo-medium. Therefore, in order to prevent the occurrence of defective separation in the fixing device, a predetermined image pattern is formed using a toner containing a wax component in a margin, i.e., a non-image forming region, at the leading end of the photo-medium. | 01-01-2009 |
20130170849 | IMAGE FORMING APPARATUS - When an unfixed toner image is formed on a recording material, a toner amount per unit area satisfying: A<(ρΠL)/30√3 when a specific gravity of a toner is ρ (g/cm | 07-04-2013 |
20130336671 | IMAGE FORMING APPARATUS - An image forming portion of an image forming apparatus is configured to form a toner image on a recording medium such that a relationship of M≦ρπL/(30√3) is satisfied, where a volume average particle size of toner is L(μm), density of the toners is ρ (g/cm | 12-19-2013 |
20140248071 | FIXING DEVICE AND ELECTROPHOTOGRAPHIC IMAGE FORMING APPARATUS - Provided is a fixing device whose required heat generation amount can be obtained with a smaller amount of a microwave absorbing material, hence start-up (warm-up) time for achieving fixable temperature of the fixing device can be shortened without impairing characteristics such as flexibility, releasing property, durability. The fixing device comprises: a heating member; a pressurizing member; and a microwave generating unit, the fixing device being configured to fix an unfixed toner on a recording material by passing the recording material through a nip formed between the heating member and the pressurizing member, wherein: the heating member includes a heat generating layer for generating heat with microwave generated by the microwave generating unit; and the heat generating layer contains a high molecular compound and a carbon fiber having an average fiber diameter of 80-150 nm, an average fiber length of 6-10 μm, and in Raman spectrum, an absorption peak resulting from graphite structure. | 09-04-2014 |
Patent application number | Description | Published |
20080228374 | FUEL INJECTION DEVICE AND ADJUSTMENT METHOD THEREOF - A fuel injection device (fuel supply system) of a common rail type fuel injection system for an engine includes a pressure sensor disposed in a fuel inlet of an injector for measuring a fuel pressure at a position where the sensor is disposed and an ECU for sensing various kinds of pressure fluctuations associated with the injection including a pressure leak due to an injection operation of the injector and waving characteristics due to actual injection thereof based on sensor outputs from the pressure sensor. The ECU serially obtains the sensor outputs from the pressure sensor at intervals of 20 μsec. | 09-18-2008 |
20080281500 | INJECTION CHARACTERISTIC DETECTION APPARATUS, CONTROL SYSTEM, AND METHOD FOR THE SAME - A fuel injection characteristic detection apparatus is applied to a fuel feed system. The fuel feed system is configured to inject fuel into one of a cylinder, an intake passage, and an exhaust passage of an internal combustion engine by using a fuel injection valve. The fuel injection characteristic detection apparatus includes fuel pressure obtaining unit for successively obtaining pressure of fuel supplied to the fuel injection valve. The fuel injection characteristic detection apparatus further includes pulsation pattern storing unit for associating a pulsation pattern of fuel pressure, which accompanies an injection operation of the fuel injection valve, with at least a fuel injection mode and a fuel pressure level at a present time point and for storing the associated pulsation pattern in a storage medium. | 11-13-2008 |
20090063017 | Apparatus for controlling quantity of fuel to be actually sprayed from injector in multiple injection mode - In an apparatus, an actual fuel spray characteristic obtaining unit obtains, based on an operation of a learning fuel injection instructing unit in a learning mode, an actual fuel spray characteristic of an injector relative to a variable of a target interval period within at least one section in a usable range therefor. A phase difference calculating unit calculates a phase difference between a reference fuel spray characteristic and the obtained actual fuel spray characteristic. A phase correcting unit shifts the reference fuel spray characteristic by the calculated phase difference such that the reference fuel spray characteristic is corrected to approach the obtained actual fuel spray characteristic. | 03-05-2009 |
20090063018 | FUEL INJECTION SYSTEM WITH INJECTION CHARACTERISTIC LEARNING FUNCTION - A fuel injection system designed to learn the quantity of fuel sprayed actually from a fuel injector into an internal combustion engine. When the engine is placed in a given learning condition, the system works to spray different quantities of the fuel for different injection durations in sequence to the engine through the fuel injector to collect a plurality of data on the quantity of the fuel sprayed actually from the fuel injector. The system analyzes the corrected data to determine an injection characteristic of the fuel injector, which may have changed from a designer-defined basic injection characteristic of the fuel injector, and uses the injection characteristic in calculating an injection duration or on-duration for which the fuel injector is to be opened to spray a target quantity of fuel. | 03-05-2009 |
20090063019 | APPARATUS FOR CONTROLLING QUANTITY OF FUEL TO BE ACTUALLY SPRAYED FROM INJECTOR IN MULTIPLE INJECTION MODE - In an apparatus, a shift quantity calculating unit tentatively shifts a reference fuel spray characteristic to an obtained actual fuel spray characteristic in a phase direction and in a magnitude offset direction while monitoring a distance between the reference fuel spray characteristic and the obtained actual fuel spray characteristic therebetween. The shift quantity calculating unit calculates a shift quantity between the reference fuel spray characteristic and the obtained actual fuel spray characteristic in the phase direction when the monitored distance is minimized. A phase correcting unit shifts the reference fuel spray characteristic by the calculated shift quantity in the phase direction to thereby correct the reference fuel spray characteristic. | 03-05-2009 |
20090063020 | Fuel injection system with injection characteristic learning function - A fuel injection system designed to determine a correction value for correcting the quantity of fuel sprayed from a fuel injector into an internal combustion engine. The fuel injection system instructs the fuel injector to inject the fuel into the engine a plurality of times cyclically to learn an injection characteristic unique to the fuel injector and changes an injection duration for which the fuel is to be sprayed in each of injection events to disperse the injection durations evenly around a target injection quantity, thereby enabling the correction value to be determined in a decreased number of injections of fuel for a decreased amount of time. | 03-05-2009 |
20090063022 | FUEL INJECTION SYSTEM WITH LEARNING CONTROL TO COMPENSATE FOR ACTUAL-TO-TARGET INJECTION QUANTITY - A fuel injection system designed to execute a learning operation to spray fuel through fuel injectors at each of given pressures of the fuel to determine the quantity of fuel sprayed actually from each of the fuel injectors (i.e., an actual injection quantity) into an internal combustion engine. The system calculates a deviation of each of the actual injection quantities from a target quantity to determine an injection correction value required to eliminate such a deviation. The system determines whether each of the injection correction values has an error or not and analyzes the mode in which the errors appear at the injection correction values to specify types of malfunction occurring in the system. The system relearns ones of the injection correction values as determined to have the errors. | 03-05-2009 |
Patent application number | Description | Published |
20080305262 | INK COMPOSITION, INK SET AND INKJET RECORDING METHOD - An ink composition includes: first particles which are insoluble and dispersed in an aqueous dispersion medium, a polarity of the first particles being one of positive and negative; and second particles which are insoluble and dispersed in the aqueous dispersion medium, the second particles including both a cationic group and an anionic group, the second particles having a zeta potential that changes along with a change in pH of the aqueous dispersion medium, percentage of a water-soluble component in the second particles being not higher than 5% by mass. | 12-11-2008 |
20090082503 | INKJET INK, METHOD OF PRODUCING THE SAME, AND INK SET - The invention provides a method of producing an inkjet ink, the method including at least subjecting a polymer particle dispersion liquid to centrifuge processing, and mixing the polymer particle dispersion liquid that has been subjected to the centrifuge processing and a water-insoluble coloring particle dispersion liquid, as well as an ink set including the produced inkjet ink and a processing liquid that causes the ink to aggregate. | 03-26-2009 |
20090163646 | SELF-DISPERSIBLE POLYMER, WATER-BASED DISPERSION, WATER-BASED INK COMPOSITION, INK SET AND IMAGE FORMING METHOD - The invention provides a self-dispersible polymer having one or more hydrophilic structural units and one or more aromatic group-containing structural units. The content of the aromatic group-containing structural units is in a range from 10 mass % to 95 mass % with respect to the total mass of the self-dispersible polymer, and the content of one or more water soluble components, which are contained in the self-dispersible polymer and exhibit solubility in water when the self-dispersible polymer is dispersed in a water-based medium, is 10 mass % or less with respect to the total mass of the self-dispersible polymer. The invention further provides a water-based dispersion containing the self-dispersible polymer, a water-based ink composition containing a polymer particle containing the self-dispersible polymer, an ink for ink jet recording containing the water-based ink composition, an ink set containing the water-based ink composition, and an image forming method including applying the water-based ink composition. | 06-25-2009 |
20090202722 | INK SET FOR INKJET RECORDING AND IMAGE RECORDING METHOD - An ink set for inkjet recording is provided. The ink set includes: at least one kind of ink composition that contains self-dispersing polymer particles, a color material, a hydrophilic organic solvent and water; and a reaction liquid capable of forming an aggregate upon contact with the ink composition. | 08-13-2009 |
20090246488 | INK-JET RECORDING METHOD AND RECORDED MATTER - An ink-jet recording method is provided. The ink-jet method includes recording an images by ejecting, onto a recording medium by an-inkjet method, a liquid composition containing polymer particles having a glass transition temperature (Tg) higher than the minimum film forming temperature (MFT), a hydrophilic organic solvent, a surfactant, and water under ejection conditions satisfying all of the following (1) to (3):
| 10-01-2009 |
Patent application number | Description | Published |
20110101306 | PHOTODIODE ARRAY, METHOD FOR MANUFACTURING PHOTODIODE ARRAY, EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER - Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array | 05-05-2011 |
20110210313 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure | 09-01-2011 |
20120168720 | GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, METHOD OF FABRICATING GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, PHOTO DETECTOR, AND EPITAXIAL WAFER - An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer | 07-05-2012 |
20120196398 | PHOTODIODE ARRAY, METHOD FOR MANUFACTURING PHOTODIODE ARRAY, EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER - Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array | 08-02-2012 |
20120217478 | SEMICONDUCTOR DEVICE, OPTICAL SENSOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device | 08-30-2012 |
20120298957 | LIGHT RECEIVING ELEMENT, LIGHT RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTING DEVICE, OPTICAL SENSOR DEVICE, AND METHOD FOR PRODUCING LIGHT RECEIVING ELEMENT ARRAY - The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array | 11-29-2012 |
20120326122 | EPITAXIAL WAFER, PHOTODIODE, OPTICAL SENSOR DEVICE, AND METHODS FOR PRODUCING EPITAXIAL WAFER AND PHOTODIODE - Provided are an epitaxial wafer, a photodiode, and the like that include an antimony-containing layer and can be efficiently produced such that protruding surface defects causing a decrease in the yield can be reduced and impurity contamination causing degradation of the performance can be suppressed. | 12-27-2012 |
20130032780 | PHOTODIODE, OPTICAL SENSOR DEVICE, AND PHOTODIODE MANUFACTURING METHOD - A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate | 02-07-2013 |
20130099203 | PHOTODETECTOR AND METHOD OF MANUFACTURING THE PHOTODETECTOR - A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6. | 04-25-2013 |
20130313521 | PHOTODIODE AND METHOD FOR PRODUCING THE SAME - An object of the present invention is to provide, for example, a photodiode that can have sufficiently high sensitivity in a near-infrared wavelength range of 1.5 μm to 1.8 μm and can have a low dark current. A photodiode ( | 11-28-2013 |
20140054545 | PHOTODETECTOR, EPITAXIAL WAFER AND METHOD FOR PRODUCING THE SAME - Provided are a photodetector in which, in a III-V semiconductor having sensitivity in the near-infrared region to the far-infrared region, the carrier concentration can be controlled with high accuracy; an epitaxial wafer serving as a material of the photodetector; and a method for producing the epitaxial wafer. Included are a substrate formed of a III-V compound semiconductor; an absorption layer configured to absorb light; a window layer having a larger bandgap energy than the absorption layer; and a p-n junction positioned at least in the absorption layer, wherein the window layer has a surface having a root-mean-square surface roughness of 10 nm or more and 40 nm or less. | 02-27-2014 |
20140061588 | GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, METHOD OF FABRICATING GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, PHOTO DETECTOR, AND EPITAXIAL WAFER - An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer | 03-06-2014 |
20140367640 | LIGHT-EMITTING ELEMENT, EPITAXIAL WAFER, AND METHOD FOR PRODUCING THE EPITAXIAL WAFER - Provided are an epitaxial wafer and a light-emitting element having a type-II MQW formed of III-V compound semiconductors and configured to emit light with a sufficiently high intensity. The method includes a step of growing an active layer having a type-II multi-quantum well structure (MQW) on a III-V compound semiconductor substrate, wherein, in the step of forming the type-II multi-quantum well structure, the type-II multi-quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources such that a number of pairs of the type-II multi-quantum well structure is 25 or more. | 12-18-2014 |
Patent application number | Description | Published |
20100132205 | METHOD FOR MEASURING ROTATION ANGLE OF BONDED WAFER - The present invention provides a method for measuring a rotation angle of a bonded wafer, wherein a base wafer and a bond wafer each having a notch indicative of a crystal orientation formed at an outer edge thereof are bonded to each other at a desired rotation angle by utilizing the notches, a profile of the bond wafer having a reduced film thickness is observed with respect to a bonded wafer manufactured by reducing a film thickness of the bond wafer, a positional direction of the notch of the bond wafer seen from a center of the bonded wafer is calculated by utilizing the profile, an angle formed between the calculated positional direction of the notch of the bond wafer and a positional direction of the notch of the base wafer is calculated, and a rotation angle of the base wafer and the bond wafer is measured. As a result, the method for measuring a rotation angle of a bonded wafer that enables accurately and easily measuring the rotation angle of the notches of the base wafer and the bond wafer in a bonded wafer manufacturing line can be provided. | 06-03-2010 |
20100314722 | SOI WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SOI WAFER - The present invention is an SOI wafer comprising at least: an SOI layer; a silicon oxide film; and a base wafer, wherein the SOI layer has a plane orientation of (100), and the base wafer has a resistivity of 100 Ω·cm or more and a plane orientation different from (100). As a result, there is provided the SOI wafer and the manufacturing method thereof that have no complicated manufacturing step, defects on a bonding interface which are not practically a problem in number and a high interface state density (Dit) for trapping carriers on an interface of a BOX layer and the base wafer. | 12-16-2010 |
20100323502 | METHOD FOR MANUFACTURING SOI SUBSTRATE - The present invention provides a method for manufacturing an SOI substrate including at least: an oxygen ion implantation step of ion-implanting oxygen ions from one main surface of a single-crystal silicon substrate to form an oxygen ion implanted layer; and a heat treatment step of performing a heat treatment with respect to the single-crystal silicon substrate having the oxygen ion implanted layer formed therein to change the oxygen ion implanted layer into a buried oxide film layer, wherein acceleration energy for the oxygen ion implantation is previously determined from a thickness of the buried oxide film layer to be obtained, and the oxygen ion implantation step is carried out with the determined acceleration energy to manufacture the SOI substrate. Thereby, it is possible to provide an SOI substrate manufacturing method that enables efficiently manufacturing an SOI substrate having a continuous and uniform thin buried oxide film layer. | 12-23-2010 |
20110104870 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film. | 05-05-2011 |
20110151643 | METHOD FOR MANUFACTURING BONDED WAFER - A method for manufacturing a bonded wafer by forming an ion implanted layer in a bond wafer; bonding an ion implanted surface of the bond wafer to a surface of a base wafer directly or through a silicon oxide film; and performing a delamination heat treatment. After the formation of the ion implanted layer and before the bonding, a plasma treatment is carried out with respect to a bonding surface of at least one of the bond wafer and the base wafer. The delamination heat treatment is carried out at a fixed temperature by directly putting the bonded wafer into a heat-treating furnace whose furnace temperature is set to the fixed temperature less than 475° C. without a temperature increasing step. | 06-23-2011 |
20110212598 | METHOD FOR MANUFACTURING BONDED WAFER - The present invention is a method for manufacturing a bonded wafer including at least the steps of: forming an ion-implanted layer inside a bond wafer; bringing the ion-implanted surface of the bond wafer into close contact with a surface of a base wafer directly or through a silicon oxide film; and performing heat treatment for delaminating the bond wafer at the ion-implanted layer, wherein the heat treatment step for delaminating includes performing a pre-annealing at a temperature of less than 500° C. and thereafter performing a delamination heat treatment at a temperature of 500° C. or more, and the pre-annealing is performed at least by a heat treatment at a first temperature and a subsequent heat treatment at a second temperature higher than the first temperature. As a result, there is provided a method for manufacturing a bonded wafer having high quality, for example, mainly the reduction of defects, by forming a high bonding strength state at a lower temperature than the temperature at which the delamination is caused, in the manufacture of the bonded wafer by the Smart Cut method (registered trademark). | 09-01-2011 |
20110223740 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing an SOI wafer having a buried oxide film with a predetermined thickness including performing a heat treatment for reducing a thickness of the buried oxide film on an SOI wafer material having an SOI layer formed on the buried oxide film, wherein a thickness of the SOI layer of the SOI wafer material to be subjected to the heat treatment for reducing the thickness of the buried oxide film is calculated on the basis of a ratio of the thickness of the buried oxide film to be reduced by the heat treatment with respect to a permissible value of an amount of change in an in-plane range of the buried oxide film, the change being caused by the heat treatment, and the SOI wafer material obtained by thinning the thickness of the bond wafer so as to have the calculated thickness of the SOI layer is subjected to the heat treatment for reducing the thickness of the buried oxide film. | 09-15-2011 |
20120326268 | SILICON EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE SAME, BONDED SOI WAFER AND METHOD FOR MANUFACTURING THE SAME - A silicon epitaxial wafer having a silicon epitaxial layer grown by vapor phase epitaxy on a main surface of a silicon single crystal substrate, wherein the main surface of the silicon single crystal substrate is tilted with respect to a [100] axis at an angle θ in a [011] direction or a [0-1-1] direction from a (100) plane and at an angle Φ in a [01-1] direction or a [0-11] direction from the (100) plane, the angle θ and the angle Φ are less than ten minutes, and a dopant concentration of the silicon epitaxial layer is equal to or more than 1×10 | 12-27-2012 |
Patent application number | Description | Published |
20080248727 | Polishing Slurry - The present invention provides a polishing slurry which remarkably inhibits the occurrence of scratch, dishing or erosion. According to the present invention, provided is a polishing slurry comprising organic particles (A), an oxidizing agent and a complexing agent, wherein said organic particles (A) are those obtained by coating a part of the surface of an organic particle (B) having functional groups capable of reacting with a metal to be polished on the surface with a resin (C) free from functional groups capable of reacting with a metal to be polished, and the organic particle (B) is preferably one containing a copolymer obtained by polymerization of a monomer composition comprising 1 to 50 weight % of one, two or more monomers selected from a monomer having a carboxyl group, a monomer having a hydroxyl group, a monomer having an amino group, a monomer having an acetoacetoxy group and a monomer having a glycidyl group, and 99 to 50 weight % of other monomers, with each percentage based on the total weight of the monomers. | 10-09-2008 |
20090064597 | Polishing Slurry and Polishing Material Using Same - Disclosed is a polishing slurry which enables to suppress damages to an under layer while securing an adequate polishing rate. The polishing slurry contains a resin (A) having an amide group and an organic resin (B). | 03-12-2009 |
20090258784 | Heat-Sensitive Recording Materials - A heat-sensitive recording material includes a heat-sensitive recording layer on a support which layer produces a color upon heating, and a protective layer on the heat-sensitive recording layer. The protective layer is obtained from a composition (A) based on an emulsion of a copolymer resin (a). The copolymer resin (a) includes a vinyl monomer component having a carboxyl group, and a vinyl monomer component copolymerizable with the vinyl monomer component. The copolymer resin (a) contains 1 to 10 parts by weight of the vinyl monomer component having a carboxyl group. The copolymer resin has a SP value (solubility parameter) of not less than 9.5 (cal/cm | 10-15-2009 |
20100248958 | THERMOSENSITIVE RECORDING MATERIAL - The present invention provides a material that is less likely to cause flex cracking, has high scratch resistance, and is suitable for a protective layer for a thermosensitive material. | 09-30-2010 |
Patent application number | Description | Published |
20120133604 | MOBILE ELECTRONIC DEVICE, CONTROL METHOD, AND STORAGE MEDIUM STORING CONTROL PROGRAM - According to an aspect, a mobile electronic device includes a first housing having a first display unit, a second housing having a second display unit, a form detector, and a control unit. The form detector detects a first form in which the second display unit is covered with the first housing while the first display unit is exposed to the outside and a second form in which the first display unit and the second display unit are exposed to the outside. A control unit cause objects for activating a function to be displayed on the first display unit and on the second display unit in an associated manner in conjunction with a change in form detected by the form detector. | 05-31-2012 |
20120274551 | ELECTRONIC DEVICE, SCREEN CONTROL METHOD, AND STORAGE MEDIUM STORING SCREEN CONTROL PROGRAM - According to an aspect, an electronic device includes a first display unit, a second display unit, a detecting unit, and a control unit. The first display unit displays a first object corresponding to a first function. The second display unit displays a second object corresponding to a second function. The detecting unit detects an operation. When the operation is detected by the detecting unit while the first object is displayed on the first display unit, the control unit dismisses the first object from the first display unit and displays information with respect to the first object on the second display unit. | 11-01-2012 |
20120274613 | MOBILE ELECTRONIC DEVICE, CONTROL METHOD AND STORAGE MEDIUM STORING CONTROL PROGRAM - According to an aspect, a mobile electronic device includes a first and a second display unit, a first and a second operation detection unit, and a control unit. The first and the second display unit display a first and second operation screen respectively. The first and the second operation detection unit detect an operation for the first and second display unit respectively. The control unit performs a switching control to switch between a first state and a second state. In the first state, a display of the second display unit is deactivated and an operation detected by the second operation detection unit is processed as an operation for the first operation screen. In the second state in, a display of the first display unit is deactivated and an operation detected by the first operation detection unit is processed as an operation for the second operation screen. | 11-01-2012 |
20120278734 | ELECTRONIC DEVICE, SCREEN CONTROL METHOD, AND STORAGE MEDIUM STORING SCREEN CONTROL PROGRAM - According to an aspect, an electronic device includes a display unit, a detecting unit, and a control unit, and composes a mail that includes an image and a text. The display unit displays a first screen and a second screen in such a manner that the first screen and the second screen do not overlap each other. The first screen displays an overview of the mail, and the second screen edits an image or a text as an element to be added to the mail. The detecting unit detects an operation. When an operation made on the second screen is detected by the detecting unit, the control unit updates the overview of the mail that is displayed on the first screen in accordance with the operation. | 11-01-2012 |
20130201144 | ELECTRONIC DEVICE, CONTROL METHOD, AND CONTROL PROGRAM - According to an aspect, an electronic device includes: a first housing having a first display unit; a second housing having a second display unit; a detecting unit; and a control unit. The detecting unit detects a first form in which the first display unit is exposed to the outside and the second display unit is covered by the first housing and a second form in which the first and second display units are exposed to the outside. Then the detecting unit detects a change in the form of the electronic device from the first form to the second form, the control unit activates a function corresponding to a selected object among objects displayed on the first display unit, and displays a screen corresponding to the function on the second display unit. | 08-08-2013 |