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Ishizone
Hasahiko Ishizone, Niigata-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20110129690 | TUNNELING MAGNETORESISTIVE ELEMENT INCLUDING MULTILAYER FREE MAGNETIC LAYER HAVING INSERTED NONMAGNETIC METAL SUBLAYER - A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before. | 06-02-2011 |
Masahiko Ishizone, Niigata-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20080253038 | Tunneling magnetic sensor including free magnetic layer and magnesium protective layer disposed thereon and method for manufacturing tunneling magnetoresistive sensor - A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged in that order from the bottom. A first protective layer made of magnesium (Mg) is disposed on the free magnetic layer. The tunneling magnetic sensor has a larger change in reluctance as compared to conventional magnetic sensors including no first protective layers or including first protective layers made of Al, Ti, Cu, or an Ir—Mn alloy. The free magnetic layer has lower magnetostriction as compared to free magnetic layers included in the conventional magnetic sensors. | 10-16-2008 |
| 20080261082 | TUNNELING MAGNETORESISTIVE ELEMENT INCLUDING MULTILAYER FREE MAGNETIC LAYER HAVING INSERTED NONMAGNETIC METAL SUBLAYER - A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before. | 10-23-2008 |
| 20080286612 | Tunneling magnetic sensing element including Pt sublayer disposed between free magnetic sublayer and enhancing sublayer and method for producing tunneling magnetic sensing element - There is provided a tunneling magnetic sensing element having an insulating barrier layer composed of Ti—O, a high rate of resistance change (ΔR/R) compared with the known art, and an interlayer coupling magnetic field Hin lower than that in the known art while low RA is maintained and the coercivity of a free magnetic layer is maintained at a low level comparable to the known art; and a method for producing the tunneling magnetic sensing element. An insulating barrier layer is composed of Ti—O. A free magnetic layer is formed on the insulating barrier layer and has a laminated structure of an enhancing sublayer composed of a CoFe alloy, a Pt sublayer, and a soft magnetic sublayer composed of a NiFe alloy, stacked in that order from the bottom. | 11-20-2008 |
| 20080291586 | Tunneling magnetic sensor including platinum layer and method for producing the same - A tunneling magnetic sensor includes a platinum layer between a pinned magnetic layer and an insulating barrier layer. The platinum layer can probably vary the barrier height (potential height) and barrier width (potential width) of the insulating barrier layer to reduce the absolute value of VCR, thus providing higher operating stability than known tunneling magnetic sensors. In addition, the insulating barrier layer can achieve increased flatness at its bottom interface (where the insulating barrier layer starts to be formed). The tunneling magnetic sensor can therefore provide a higher rate of resistance change (ΔR/R) at low RA than known tunneling magnetic sensors. | 11-27-2008 |
Masahiko Ishizone, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20080278866 | MAGNETIC SENSING ELEMENT - At both sides of an element portion, a first hard bias layer having a higher residual magnetization Mr and a second hard bias layer having a higher coercive force Hc are deposited in that order from the bottom with one end of the first hard bias layer being closed close to a free magnetic layer. A film thickness ratio of the first hard bias layer in a whole hard bias layer is from 35% to 75%. This stabilizes magnetization in the free magnetic layer to reduce asymmetry, thus enabling improvement in stability of reproducing characteristics including noise suppression. | 11-13-2008 |
Takashi Ishizone, Tokyo JP
| Patent application number | Description | Published |
|---|---|---|
| 20100159353 | POLYMER ELECTROLYTE, POLYMER ELECTROLYTE MEMBRANE, MEMBRANE-ELECTRODE ASSEMBLY AND POLYMER ELECTROLYTE FUEL CELL - Disclosed are: a polymer electrolyte which comprises, as the main component, a block/graft copolymer comprising, as constituent components, polymer blocks (A), (B) and (C) which cause phase-separation from one another, wherein the polymer block (A) comprises a vinyl compound unit as the main repeating unit and has an ion-conductive group, the polymer block (B) comprises a vinyl compound unit capable of forming a flexible phase as the main repeating unit and forms a flexible phase, and the polymer block (C) comprises a styrene derivative unit carrying an alicyclic hydrocarbon group having a polycyclic structure as the main repeating unit and forms a restrained phase; a membrane; a membrane-electrode assembly; and a solid polymer fuel cell. The polymer electrolyte has excellent durability and heat resistance, and shows little change in properties, such as the change in dimension between a dried state and a wet state, the change in mechanical properties and the change in methanol cross-over before and after the immersion in a methanol solution. The polymer electrolyte can be used stably in a solid polymer fuel cell during the long-term operation of the solid polymer fuel cell and enables excellent start-up performance of the solid polymer fuel cell. | 06-24-2010 |
Yohei Ishizone, Chiyoda-Ku JP
| Patent application number | Description | Published |
|---|---|---|
| 20100266080 | TRANSMISSION DEVICE, RECEIVING DEVICE AND COMMUNICATION SYSTEM - Provided are a transmission device, a receiving device, and a communication system having a simple configuration and capable of reliably executing the confirmation of a changed bit rate. The communication system | 10-21-2010 |