Patent application number | Description | Published |
20100155989 | STAMPER FOR TRANSFERRING FINE PATTERN AND METHOD FOR MANUFACTURING THEREOF - An object of the present invention is to provide a stamper for transferring fine pattern and a method for manufacturing the stamper, the stamper has a fine structure layer to improve a continuous transferring property of the resinous stamper, and to allow accurate and continuous transferring. In order to achieve the above object, the present invention provides a stamper for transferring fine pattern, including: a fine structure layer on a supporting substrate, in which the fine structure layer is a polymer of a resinous compound whose principal component is silsesquioxane derivative having a plurality of polymerizable functional groups. | 06-24-2010 |
20100270712 | MICROPATTERN TRANSFER METHOD AND MICROPATTERN TRANSFER DEVICE - An object of the present invention is to provide a micropattern transfer method and a micropattern transfer device in which the small amount of resin is applied to a substrate, and the nonuniformity in thickness is prevented to arise on the obtained pattern forming layer. In order to achieve the above object, the present invention provides a micropattern transfer method in which a micropattern is transferred to a resin by pressing a stamper having the micropattern onto the resin applied to a substrate, including the steps of: applying the resin to a surface of the substrate discretely in order to obtain a plurality of resin islands so that a center portion of each of the resin islands forms a planar thin-film, and a peripheral portion of the resin island rises higher than the center portion. | 10-28-2010 |
20110305787 | STAMPER FOR TRANSFER OF MICROSCOPIC STRUCTURE AND TRANSFER APPARATUS OF MICROSCOPIC STRUCTURE - A stamper is used for the transfer of microscopic structures, the stamper including a base and a microscopic structure layer on a surface thereof, in which the microscopic structure layer has a surface layer including a polymer derived from a resin composition containing a polymerization initiator and a silsesquioxane derivative having two or more polymerizable functional groups, the microscopic structure layer has a modulus of elasticity of less than 2.0 GPa and has a thickness of 4 times or more the height of a microscopic structure formed on the surface of the microscopic structure layer. | 12-15-2011 |
20120027884 | NANO-IMPRINTING RESIN STAMPER AND NANO-IMPRINTING APPARATUS USING THE SAME - The present invention provides a nano-imprinting resin stamper including a micro structure layer on a transmissive support basal material, the micro structure layer being formed of a polymer of a resin composition that contains a silsesquioxane derivative as a major constituent having a plurality of polymerizable functional groups, another polymerizable resin component having a plurality of polymerizable functional groups and different from the silsesquioxane derivative, and a photopolymerizable initiator, in which the content percentage of the photopolymerizable initiator is equal to or more than 0.3 mass % and equal to or less than 3 mass % relative to a total mass of the silsesquioxane derivative and the polymerizable resin component, and the micro structure layer permits equal to or more than 80% of light to pass therethrough at a wavelength of 365 nm. | 02-02-2012 |
20120321738 | MICRO-PATTERN TRANSFERRING STAMPER - A micro-pattern transferring stamper includes a supporting base material and a microstructure layer formed on the supporting base material, the microstructure layer is a polymer of a resin composition that mainly contains a silsesquioxane derivative containing a plurality of polymerizable functional groups, and one or plural kinds of monomer elements containing a plurality of polymerizable functional groups. | 12-20-2012 |
20130001835 | STAMPER FOR TRANSFERRING FINE PATTERN AND METHOD FOR MANUFACTURING THEREOF - An object of the present invention is to provide a stamper for transferring fine pattern and a method for manufacturing the stamper, the stamper has a fine structure layer to improve a continuous transferring property of the resinous stamper, and to allow accurate and continuous transferring. In order to achieve the above object, the present invention provides a stamper for transferring fine pattern, including: a fine structure layer on a supporting substrate, in which the fine structure layer is a polymer of a resinous compound whose principal component is silsesquioxane derivative having a plurality of polymerizable functional groups. | 01-03-2013 |
Patent application number | Description | Published |
20090160048 | Semiconductor Unit, and Power Conversion System and On-Vehicle Electrical System Using the Same - A semiconductor device includes a semiconductor chip and leads electrically connected to the electrodes of the semiconductor chip. A hollow radiator base houses the semiconductor device which is molded with high-thermal-conductivity resin having an electrical insulating property. The radiator base has a cooling-medium channel therein or radiating fins on the outside. Alternatively, the radiator base is housed in a second radiator base. | 06-25-2009 |
20090179321 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device, having a first semiconductor region, and a second semiconductor region; mounted with a first electrode pad on a semiconductor substrate main surface at the inside surrounded by the third semiconductor region, mounted in the second semiconductor region, and a multilayer substrate having first and second wiring layers, to take out an electrode of the semiconductor chip; joining the first wiring layer part for the first electrode, mounted on the multilayer substrate, in a region opposing to the semiconductor substrate main surface at the inside surrounded by the third semiconductor region, and the first electrode pad, by a conductive material; joining the first wiring layer part for the first electrode, and the second wiring layer at a conductive part; and extending the second wiring layer to the outside of a region opposing the semiconductor substrate main surface at the inside surrounded by the third semiconductor region. | 07-16-2009 |
20100187678 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided. | 07-29-2010 |
20110075334 | Transmission Control Apparatus and Mechanically and Electrically Integrated Type Electronic Control Apparatus - An object of the present invention is to provide a mechanically and electrically integrated type electronic control apparatus which can be embedded in a compact mechanical part, and has a compact structure while having a high wiring freedom, a high heat dissipation and a high reliability. In a mechanically and electrically integrated type electronic control apparatus provided with a control signal generating part, and an angular wiring member connecting the control signal generating part and a controlled part controlled by a control signal of the control signal generating part, installed within a conductive casing, at least the wiring member has a fixed hole, a surface including the fixed hole is coated in an insulative manner, and the fixed hole is fixed to the conductive casing mechanically while keeping an insulating property. | 03-31-2011 |
20110204125 | LOW TEMPERATURE BONDING MATERIAL AND BONDING METHOD - A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 μm, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material. | 08-25-2011 |
20120104618 | LOW TEMPERATURE BONDING MATERIAL AND BONDING METHOD - A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 μm, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material. | 05-03-2012 |
20130071971 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a structure of a semiconductor device, a Si chip and a metal leadframe are jointed by metallic bond via a porous joint layer made of high conductive metal, having a three-dimensional network structure and using Ag as a bonding material, and a film containing Zn oxide or Al oxide is formed on a surface of a semiconductor assembly contacting to a polymer resin. In this manner, by the joint with the joint layer having the porous structure mainly made of Ag, thermal stress load of the Si chip can be reduced, and fatigue life of the joint layer itself can be improved. Besides, since adhesion of the polymer resin to the film can be enhanced by the anchor effect, occurrence of cracks in a bonding portion can be prevented, so that a highly-reliable Pb-free semiconductor device can be provided. | 03-21-2013 |
20130119525 | Power Semiconductor Unit, Power Module, Power Semiconductor Unit Manufacturing Method, and Power Module Manufacturing Method - Heat radiation surfaces | 05-16-2013 |
20130270684 | POWER MODULE AND LEAD FRAME FOR POWER MODULE - The present invention aims at providing a power module and a lead frame for the power module which can enhance adhesion between a heat sink and an insulating resin sheet while maintaining heat radiation properties. The power module includes: the lead frame including a conductor plate formed from Cu or a Cu alloy, and an Al film formed at least on the other side, opposite to one side on which to mount a semiconductor device, of the conductor plate; the semiconductor device mounted on the one side of the conductor plate; a sealing resin which seals at least the semiconductor device and the conductor plate; and an insulating resin sheet adhered to the conductor plate through the Al film therebetween. | 10-17-2013 |
20130279230 | Power Module - Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt−0.015)×εr, where a relative permittivity of the insulating member is Er and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding. | 10-24-2013 |