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Ishihara, Yokohama-Shi

Atsushi Ishihara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20090060462RECORDING APPARATUS, RECORDING METHOD, AND SERVER APPARATUS - According to one embodiment, a recording apparatus includes a receiving section which receives a stream and address information indicating an encryption target region of the stream, and a recording section which records the stream on each sector of a recording medium and records management information on a sector header of the sector where data on the encryption target region is recorded.03-05-2009

Patent applications by Atsushi Ishihara, Yokohama-Shi JP

Haruhiko Ishihara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20080299321METHOD FOR MANUFACTURING PRODUCT - A method for manufacturing a product includes: filling, with a dispersion medium, an internal flow path and a liquid chamber of a droplet-jetting head for jetting droplets of liquid filled in the liquid chamber through the internal flow path, the internal flow path and the liquid chamber communicating with each other; filling the internal flow path and the liquid chamber of the droplet-jetting head with a dispersion liquid containing particles in place of the dispersion medium filled in the internal flow path and the liquid chamber; and applying the dispersion liquid droplets onto an object to be coated from the droplet-jetting head filled with the dispersion liquid.12-04-2008

Patent applications by Haruhiko Ishihara, Yokohama-Shi JP

Kazuhiko Ishihara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20090321357Affinity Particle And Affinity Separation Method - The present invention is affinity particles that are characterized by having phosphorylcholine groups represented by the following formula (1) covalently bonded onto the surface of inorganic powder and also by having ligands having specific affinity with a certain target substance covalently bonded or adsorbed onto the surface of inorganic powder.12-31-2009
20100137133Affinity Particle And Affinity Separation Method - The present invention is affinity particles that are characterized by having phosphorylcholine groups represented by the following formula (1) covalently bonded onto the surface of inorganic powder and also by having ligands having specific affinity with a certain target substance covalently bonded or adsorbed onto the surface of inorganic powder.06-03-2010

Keiichiro Ishihara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20090021801LIGHT SCANNING APPARATUS AND SCANNING DISPLAY APPARATUS - A light scanning apparatus includes a scanner 01-22-2009
20090040585OPTICAL SCANNING APPARATUS AND IMAGE DISPLAYING APPARATUS HAVING THE SAME - The object of the present invention is to provide an optical scanning apparatus which is not limited in the disposition of a scanning device, can reduce the adherence of dust to each member of the scanning device, and is enhanced in the reliability of the scanning device, and an image displaying apparatus having the same. The optical scanning apparatus includes a housing for containing and holding therein a scanning device provided with a movable mirror, an elastic supporting portion for supporting the movable mirror swingably about a swinging center, and a supporting base for supporting the elastic supporting portion, an optical member OE constituting a first optical system for directing a beam to the scanning device in the housing, and an optical member OX constituting a second optical system for emerging the beam passed through the scanning device. At least a part of the optical member OE and at least a part of the optical member OX constitute a part of the housing, and are provided so that a space in which the scanning device is contained in the housing configures a sealed space.02-12-2009
20090283238MANUFACTURING METHOD FOR OPTICAL ELEMENT - To obtain a positioning reference portion with good processing accuracy, which is formed of a newly-formed surface, a blank is press-molded by an upper mold, whereby a vertex portion abuts on an inner wall portion of a lower mold. In such a way, an oxide film that covers the vertex portion is broken by an internal pressure of the blank, and a raw material without oxide is moved by viscous flow from an inside thereof as illustrated by arrows. The raw material without oxide moved by viscous flow is thrust against the inner wall portion of the lower mold, whereby a newly-formed surface is formed, and this newly-formed surface serves as a positioning reference portion of an optical element. The newly-formed surface has surface roughness of the inner wall portion of the lower mold transferred thereto, and the positioning reference portion having good roughness is formed.11-19-2009
20110228369SCANNING IMAGE PROJECTION APPARATUS - The image projection apparatus includes a laser light source, and a scanning device scanning a light flux from the laser light source in horizontal and vertical directions at mutually different frequencies on a projection surface. A condition of09-22-2011
20120019937OPTICAL SYSTEM AND IMAGE PICKUP APPARATUS USING THE SAME - An optical system includes a positive lens unit, wherein the positive lens unit includes an optical element containing a base material and minute particles that are mixed with the base material and have Abbe number that is lower than that of the base material, and the minute particles are higher in density at a peripheral portion of the optical element than on an optical axis of the optical element.01-26-2012

Patent applications by Keiichiro Ishihara, Yokohama-Shi JP

Kuniaki Ishihara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20100297795Method for producing semiconductor optical device - A method for producing a semiconductor optical device, includes the steps of: forming a semiconductor region including a semiconductor layer on a substrate; preparing a mold including a pattern surface, the pattern surface including an arrangement of patterns each including first to n-th pattern portions; forming a first mask on the semiconductor region with the mold by a nano-imprint technique; forming first to n-th periodic structures in each of the device sections in the semiconductor region by using the first mask, the first to n-th periodic structures respectively corresponding to the first to n-th pattern portions; forming a second mask after the first mask is removed, the second mask including a first pattern on an i-th periodic structure (1≦i≦n) among the first to n-th periodic structures in a first section of the device sections and including a second pattern on a j-th periodic structure (1≦j≦n) among the first to n-th periodic structures in a second section of the device sections; and forming first and second stripe mesas in the first and second sections respectively by using the second mask.11-25-2010
20100303115METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DIODE - A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF12-02-2010

Shigenori Ishihara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20120031748FILM FORMING APPARATUS AND FILM FORMING METHOD - The present invention provides a film forming apparatus and a film forming method which are unlikely to be affected by changes in size and shape of a shield board caused by a recovery process. A film forming apparatus includes a shield board surrounding a sputtering space between a process-target substrate on a stage and a target facing each other in a vacuum chamber, and forms a film on the process-target substrate by causing at least one kind of reactive gas and a film forming material to react with each other. The film forming apparatus is configured to control a ratio of the flow rate of the gas to be introduced into the sputtering space to the flow rate of the gas to be introduced into a space between an inner wall of the vacuum chamber and the shield board, based on a pressure value of the sputtering space measured by pressure detection means.02-09-2012

Takamitsu Ishihara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20080286924SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device includes a memory cell which includes a first gate insulation film provided on the semiconductor substrate; a floating gate electrode provided on the first gate insulation film; a second gate insulation film provided on the floating gate electrode; a control gate electrode provided on the second gate insulation film; a source layer and a drain layer that are provided in the semiconductor substrate, the source layer and the drain layer respectively being provided either side of a channel region which is below the floating gate electrode; a source electrode that is electrically connected to the source layer; a buffer film provided on the drain layer; and a memory cell including a drain electrode electrically connected to the drain layer through the buffer film, wherein when viewing the surface of the semiconductor substrate from above, an overlapped area between the floating gate electrode and the drain layer is smaller than an overlapped area between the floating gate electrode and the source layer.11-20-2008
20090236654NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film.09-24-2009
20090261399Nonvolatile semiconductor memory device and manufacturing method thereof - A nonvolatile semiconductor memory device includes a semiconductor substrate of a first conductivity type, a pair of source and drain diffusion regions of a second conductivity type oppositely formed on a surface of the semiconductor substrate, and a stacked structure having a gate insulating film, a charge accumulation film, an interlayer insulating film and a control gate which are formed in order on a channel region of the surface of the semiconductor substrate interposed between the source and drain diffusion regions. An edge of the stacked structure in the vicinity of the source region is formed away from a junction position between the source diffusion region and the channel region.10-22-2009

Patent applications by Takamitsu Ishihara, Yokohama-Shi JP

Toshiharu Ishihara, Yokohama-Shi JP

Patent application numberDescriptionPublished
20100101985APPARATUS FOR REMOVING DISSOLVED HYDROGEN SULFIDE IN ANAEROBIC TREATMENT - Disclosed is an apparatus for removing dissolved hydrogen sulfide, including an anaerobic treatment tank (04-29-2010