| Patent application number | Description | Published |
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| 20080319676 | Absolute Quantitation of Protein Contents Based on Exponentially Modified Protein Abundance Index by Mass Spectrometry - The present inventor has established protein abundance index (PAI, π) to determine the protein contents in a protein mixture solution using nanoLC-MSMS data. Digested peptides were analyzed by nanoLC-MS/MS and the obtained results were applied to a Mascot protein identification algorism based on tandem mass spectra. PAI is defined as the number of observed peptides divided by the number of observable peptides per protein. PAI from different concentrations of serum albumin showed linear relationship to the logarithm of the protein concentration. This was also valid for 47 proteins in a mouse whole cell lysate analyzed by single run of nanoLC-MS/MS. On the other hand, Mascot protein scores as well as the number of identified peptides per protein were less correlated to the protein abundance. For absolute quantitation, PAI was converted to exponentially modified PAI (EMPAI, mπ), which is proportional to protein contents in the protein mixture. For the 47 proteins in the whole lysate, the deviation percentages of the EMPAI-based concentrations to the actual values were within 63% in average. EMPAI was successfully applied to comprehensive protein expression analysis and performed a comparison study between gene and protein expression in an HCT116 human cancer cells. Accordingly, the present invention provides a method and a computer program for quantifying the protein contents based on the protein abundance index. | 12-25-2008 |
| 20090012714 | Test of amino acid sequence constituting peptide using isotopic ratio - It is an object of the present invention, when determining and identifying an amino acid sequence of a peptide using MS, to obtain additional information from the MS for evaluating validity of an amino acid sequence in a candidate list outputted from an identifying engine. The present invention provides a method of testing an amino acid sequence inferred by searching a peptide-related database based on peptide mass information and/or peptide modification information obtained through mass spectrometry on a peptide, the method comprising the steps: (1) calculating a theoretical value of an isotopic ratio for the peptide from the inferred amino acid sequence and/or the peptide modification information; (2) measuring a measured value of the isotopic ratio for the peptide from the peptide mass information; and (3) comparing the theoretical value and the measured value, and evaluating validity of the inferred amino acid sequence from differences between the theoretical value and the measured value. | 01-08-2009 |
| 20100012832 | METHOD OF SEPARATING PHOSPHORYLATED PEPTIDE OR PHOSPHORYLATED PROTEIN - According to the present invention, phosphorylated peptides and/or phosphorylated proteins are specifically separated. A sample containing a phosphorylated peptide and/or a phosphorylated protein is supplied to a separation unit filled with a metal oxide in the presence of an aliphatic hydroxycarboxylic acid. Upon separation of a phosphorylated peptide and/or a phosphorylated peptide with the use of a separation unit filled with a metal oxide, adsorption of carboxylic acid to an acidic peptide can be prevented in the presence of aliphatic hydroxycarboxylic acid. In addition, aliphatic hydroxycarboxylic acid does not inhibit adsorption of a phosphorylated peptide and a phosphoric acid group in the phosphorylated peptide to a metal oxide. | 01-21-2010 |
| Patent application number | Description | Published |
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| 20090269938 | CHEMICAL VAPOR DEPOSITION APPARATUS - A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized. | 10-29-2009 |
| 20100229794 | VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR - Provided is a vapor phase epitaxy apparatus for a III nitride semiconductor, including a susceptor for holding a substrate, an opposite face of the susceptor, a heater for heating the substrate, a raw material gas-introducing portion provided at the central portion of the susceptor, and a reactor formed of a gap between the susceptor and the opposite face of the susceptor, in which a distance between the installed substrate and the opposite face of the susceptor is extremely narrow, and a constitution through which a coolant is flown is provided for the opposite face of the susceptor. The vapor phase epitaxy apparatus further includes, on the opposite face of the susceptor, a fine porous portion for ejecting an inert gas toward the inside of the reactor and a constitution for supplying the inert gas to the fine porous portion. The vapor phase epitaxy apparatus for a III nitride semiconductor is capable of efficient, high-quality crystal growth even when a crystal is grown on the surface of each of many large-aperture substrates held by a susceptor having a large diameter or even when a substrate is heated at a temperature of 1000° C. or higher before a crystal is grown. | 09-16-2010 |
| 20100307418 | VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR - Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor capable of improving the uniformity of the film thickness distribution, and reaction rate, of a semiconductor. The vapor phase epitaxy apparatus of a group III nitride semiconductor includes: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gas to the reactor; and a reacted gas-discharging portion. In the vapor phase epitaxy apparatus of a group III nitride semiconductor, the raw material gas-introducing portion includes a first mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing three kinds, i.e., ammonia, an organometallic compound, and a carrier gas at an arbitrary ratio, and a second mixed gas ejection orifice capable of ejecting a mixed gas obtained by mixing two or three kinds selected from ammonia, the organometallic compound, and the carrier gas at an arbitrary ratio. | 12-09-2010 |
| 20110180001 | VAPOR PHASE EPITAXY APPARATUS OF GROUP III NITRIDE SEMICONDUCTOR | 07-28-2011 |
