Patent application number | Description | Published |
20100301340 | Thin film transistors and arrays - Thin film transistors and arrays having controlled threshold voltage and improved I | 12-02-2010 |
20100301343 | Metal oxynitride thin film transistors and circuits - Thin film transistors and circuits having improved mobility and stability are disclosed in this invention to have metal oxynitrides as the active channel layers. In one embodiment, the charge carrier mobility in the thin film transistors is increased by using the metal oxynitrides as the active channel layers. In another embodiment, a thin film transistor having a p-type metal oxynitride active channel layer and a thin film transistor having an n-type metal oxynitride active channel layer are fabricated to forming a CMOS circuit. In yet another embodiment, thin film transistor circuits having metal oxynitrides as the active channel layers are provided. | 12-02-2010 |
20110180850 | Configuration and manufacturing method of low-resistance gate structures for semiconductor devices and circuits - The present invention provides methods for fabricating devices with low resistance structures involving a lift-off process. A radiation blocking layer is introduced between two resist layers in order to prevent intermixing of the photoresists. Cavities suitable for the formation of low resistance T-gates or L-gates can be obtained by a first exposure, developing, selective etching of blocking layer and a second exposure and developing. In another embodiment, a low resistance gate structure with pillars to enhance mechanical stability or strength is provided. | 07-28-2011 |
20110291159 | Stress release structures for metal electrodes of semiconductor devices - This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices. | 12-01-2011 |
20130065383 | Fabrication methods for T-gate and inverted L-gate structure for high frequency devices and circuits - In high frequency circuits, the switching speed of devices is often limited by the series resistance and capacitance across the input terminals. To reduce the resistance and capacitance, the cross-section of input electrodes is made into a T-shape or inverted L-shape through lithography. The prior art method for the formation of cavities for T-gate or inverted L-gate is achieved through several steps using multiple photomasks. Often, two or even three different photoresists with different sensitivity are required. In one embodiment of the present invention, an optical lithography method for the formation of T-gate or inverted L-gate structures using only one photomask is disclosed. In another embodiment, the structure for the T-gate or inverted L-gate is formed using the same type of photoresist material. | 03-14-2013 |
20140332854 | Stress release structures for metal electrodes of semiconductor devices - This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices. | 11-13-2014 |
20150069514 | Millimetre wave integrated circuits with thin film transistors - MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules. | 03-12-2015 |
20150102387 | High Electron Mobility Transistors with Minimized Performance Effects of Microcracks in the Channel Layers - In HEMTs based on III-nitrides epitaxial films or GaAs, AlGaAs and InGaAs epitaxial films, unwanted microcracks are often formed in the composite epitaxial layers in the channel region during fabrication and operation. These microcracks are caused by strain or stresses due to lattice mismatch and thermal expansion coefficient differences between materials and substrate's. Those microcracks will bring about an increase in source to drain resistance and lead to performance and reliability degradation of the HEMTs and the MMICs containing them. The present invention provides HEMTs with minimized effects of the unwanted microcracks by aligning the channel region long axis to a certain direction so that the channel region long axis forms a right angle with axis of at least one type of the microcracks. | 04-16-2015 |