Patent application number | Description | Published |
20080225133 | CMOS APS with stacked avalanche multiplication layer and low voltage readout electronics - An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components. | 09-18-2008 |
20090002536 | Biasing scheme for large format CMOS active pixel sensors - An image sensor includes circuitry compensating for voltage drops in a V | 01-01-2009 |
20090051798 | Wide dynamic range linear-and-log active pixel - A pixel circuit having an improved dynamic range is disclosed. When incoming light detected by the photodiode is strong, the accumulated (integrated) charge on a signal capacitor becomes large. To compensate, the excess signal component becomes compressed and the pixel circuit begins operating in logarithmic rather than linear mode. In this way, the circuit can achieve a higher dynamic range more closely resembling the image sensing properties of the human eye. | 02-26-2009 |
20090200455 | CMOS APS WITH STACKED AVALANCHE MULTIPLICATION LAYER AND LOW VOLTAGE READOUT ELECTRONICS - An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the voltage in the pixel circuit reaches the operating voltage applied to the charge multiplying photoconversion layer in response to the image sensor being exposed to a strong light. The protection circuit causes additional voltage entering the pixel circuit from the charge multiplying photoconversion layer over a predetermined threshold voltage level to be dissipated from the storage node and any downstream components. | 08-13-2009 |
20090244344 | SYSTEMS, METHODS, AND DEVICES FOR PREVENTING SHOOT-THROUGH CURRENT WITHIN AND BETWEEN SIGNAL LINE DRIVERS OF SEMICONDUCTOR DEVICES - An imaging device driver for transmitting a signal onto a signal line for controlling transistors of a pixel row. The device includes a controller and associated circuitry for reducing shoot-through current within and between row driver circuits for driving the signal line. The controller reduces shoot-through current by preventing concurrent transmission of high and low signal outputs to the signal line by respective high and low voltage sources of the same or different row driver circuits. | 10-01-2009 |
20120062772 | IMAGING SYSTEMS WITH COLUMN RANDOMIZING CIRCUITS - An imaging system may include an image sensor array and column randomizing multiplexers. The imaging system may include a data output circuit and image readout circuitry such as analog amplifiers, analog-to-digital converters, and memory circuits. The column randomizing multiplexers may include a first column randomizing multiplexer between the image sensor array and at least some of the image readout circuitry. The first column randomizing multiplexer may randomly connect columns of the image sensor array to the image readout circuitry. The connections made by the first column randomizing multiplexer may be randomized as each row of the image sensor array is read out. The column randomizing multiplexers may include a second column randomizing multiplexer between at least some of the image readout circuitry and the data output circuit. The second column randomizing multiplexer may reorder image data for the image readout circuitry. | 03-15-2012 |
20120287316 | RAMP AND SUCCESSIVE APPROXIMATION REGISTER ANALOG TO DIGITAL CONVERSION METHODS, SYSTEMS AND APPARATUS - Successive approximation register (SAR) and ramp analog to digital conversion (ADC) methods, systems, and apparatus are disclosed. An analog voltage signal may be converted into a multiple bit digital value by generating bits of the multiple bit digital value by performing a SAR conversion on the analog voltage signal, where the bits corresponding to a SAR voltage level, and generating other bits of the multiple bit digital value by performing one or more ramp conversions on the analog voltage signal, the ramp conversion comparing the analog voltage signal to a ramp of voltage levels based on the SAR voltage level. The SAR and ramp ADC can provide multi-sampling using one SAR conversion and multiple ramp conversions. The SAR can set the voltage level of a first ramp of a multiple ramp conversion, which can then be used to preset the voltage level prior to subsequent ramps. | 11-15-2012 |
20150237275 | IMAGE SENSORS WITH ANTI-ECLIPSE CIRCUITRY - An image sensor may include an array of image pixels arranged in rows and columns. Image pixels arranged along the same column may be coupled to a column line. The column line may be coupled to anti-eclipse control circuitry. In one suitable arrangement, the anti-eclipse control circuitry may include a data converter and an eclipse condition judgment circuit. The eclipse condition judgment circuit may be configured to record pixel output values at different points in time and to compare the recorded data to a predetermined threshold to determine whether an eclipse condition is satisfied. In another suitable arrangement, the anti-eclipse control circuitry may include a comparator and an eclipse condition judgment circuit. The comparator may compare a temporarily elevated pixel output value to a reference voltage to determine whether the eclipse condition is satisfied. In either arrangement, a maximum pixel level may be output when the eclipse condition is met. | 08-20-2015 |