| Patent application number | Description | Published |
|---|
| 20090246932 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure. | 10-01-2009 |
| 20110065262 | Method of manufacturing semiconductor device - A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure. | 03-17-2011 |
| Patent application number | Description | Published |
|---|
| 20080261370 | Semiconductor device and method of fabricating the same - According to the present invention, there is provided a semiconductor device fabrication method comprising:
| 10-23-2008 |
| 20090269894 | Semiconductor device and method of fabricating the same cross-reference to related applications - A semiconductor device includes a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, a source/drain diffusion layer formed in the semiconductor substrate at both sides of the gate electrode, and a channel region formed in the semiconductor substrate between a source and a drain of the source/drain diffusion layer and arranged below the gate insulating film, wherein an upper surface of the source/drain diffusion layer is positioned below a bottom surface of the gate electrode, and an upper surface of the channel region is positioned below the upper surface of the source/drain diffusion layer. | 10-29-2009 |
| 20100087041 | Semiconductor device fabrication method - According to the present invention, there is provided a semiconductor device fabrication method comprising:
| 04-08-2010 |
| 20100140682 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a nonvolatile semiconductor memory device, a tunnel insulating layer, a charge storage layer and a charge block layer are formed on a silicon substrate in this order, and a plurality of control gate electrodes are provided above the charge block layer. Moreover, a cap layer made of silicon nitride is formed between the charge block layer and each of the control gate electrode, the cap layer being divided for each gate control electrode. | 06-10-2010 |
