Isamu Mori
Isamu Mori, Chiyoda-Ku JP
Patent application number | Description | Published |
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20120180811 | DRY CLEANING METHOD OF SUBSTRATE PROCESSING APPARATUS - A dry cleaning method of a substrate processing apparatus includes forming a metal oxide by oxidizing a metal film adhered to the inside of a processing chamber of the substrate processing apparatus; forming a complex by reacting the metal oxide with β-diketone; and sublimating the complex to be removed. A cleaning gas containing oxygen and β-diketone is supplied into the processing chamber while heating the inside of the processing chamber. A flow rate ratio of oxygen to β-diketone in the cleaning gas is set such that a formation rate of the metal oxide is lower than a formation rate of the complex. | 07-19-2012 |
Isamu Mori, Bunkyo-Ku JP
Patent application number | Description | Published |
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20120231630 | Etching Gas - Disclosed is an etching gas provided containing CHF | 09-13-2012 |
20120234351 | Cleaning Gas - Disclosed is a cleaning gas for deposits, which contains CHF | 09-20-2012 |
20120298911 | Dry Etching Agent and Dry Etching Method Using the Same - A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF | 11-29-2012 |
20130032600 | Valve For Container Filled With Halogen Gas Or Halogen Compound Gas - A direct-touch diaphragm valve according to the present invention includes a valve body having inlet and outlet passages, a valve chamber being in communication with the inlet and outlet passages, a valve seat located around an open inner end of the inlet passage and a diaphragm arranged on the valve seat so as to hermetically seal the valve chamber and open or close the inlet and outlet passages, wherein the valve seat and the diaphragm have respective contact surfaces formed therebetween such that: such that: the contact surface of the valve seat has a surface roughness Ra of 0.1 to 10.0 μm and a curvature radius Ra of 100 to 1000 mm; and the area ratio Sb/Sa of a contact area Sb of the valve seat with the diaphragm to a gas contact surface area Sa of the diaphragm ranges from 0.2 to 10%. | 02-07-2013 |
20130105728 | Dry Etching Agent and Dry Etching Method | 05-02-2013 |
Isamu Mori, Ube-Shi JP
Patent application number | Description | Published |
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20130341202 | Method for Synthesizing Fluorine Compound by Electrolysis and Electrode Therefor - Disclosed is an electrode for electrolytic synthesis of a fluorine compound, including: an electrode substrate having at least a surface thereof formed of a conductive carbon material; a conducting diamond layer formed on a part of the surface of the electrode substrate; and a metal fluoride-containing coating layer formed on an exposed part of the electrode substrate that is uncovered by the conducting diamond layer. It is possible for the electrolytic synthesis electrode to limit the growth of a graphite fluoride layer on the electrode surface, prevent decrease in effective electrolysis area and allow stable electrolysis in an electrolytic bath of a hydrogen fluoride-containing molten salt. | 12-26-2013 |
20140206196 | Dry Etching Method - There is provided according to the present invention a dry etching method for a laminated film, the laminated film being formed on a substrate and having a laminated structure in which silicon layers and insulating layers are laminated together with a hole or groove defined therein in a direction perpendicular to a surface of the substrate, the dry etching method comprising etching, with an etching gas, parts of the silicon layers appearing on an inner surface of the hole or groove, characterized in that the etching gas comprises: at least one kind of gas selected from the group consisting of ClF | 07-24-2014 |
20140302683 | DRY ETCHING AGENT - The invention is directed to providing a dry etching agent having little effect on the global environment but having the required performance. Provided is a dry etching agent containing, each at a specific vol %: (A) a fluorine-containing unsaturated hydrocarbon represented by the formula C | 10-09-2014 |
20150047680 | Method for Dry-Cleaning Metal Film in Film-Formation Apparatus - Disclosed is a dry-cleaning method for removing a metal film adhered to a film-formation apparatus by using β-diketone, the dry-cleaning method being characterized by that a gas containing β-diketone and NOx (representing at least one of NO and N | 02-19-2015 |