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Io
Eiji Io, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090096015 | Nonvolatile semiconductor memory device and manufacturing method therefor - In a nonvolatile semiconductor memory device, a floating gate is formed on a semiconductor substrate through a gate insulating film, and has a first portion contacting the gate insulating film and a second portion extending upwardly from a part of a surface of the first portion. A first diffusion layer is formed in the semiconductor substrate to have a plane parallel to a surface of the semiconductor substrate. A second diffusion layer is formed in the semiconductor substrate, to have the plane. A control gate is provided near the floating gate above a channel region in the semiconductor substrate and is formed on a first side of the first portion. A conductive film is connected with the first diffusion layer and is formed on a second side of the first portion and a first side of the second portion through the first insulating film. | 04-16-2009 |
| 20090166708 | Nonvolatile semiconductor memory with erase gate and its manufacturing method - A nonvolatile semiconductor memory device includes a semiconductor substrate, a select gate formed above the semiconductor substrate, a floating gate formed above the semiconductor substrate and an erase gate positioned lower than an upper surface of the floating gate, and opposite an edge of a lower surface of the floating gate. | 07-02-2009 |
Hirofumi Io, Sodegaura-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20090246686 | POLYMER, POLYMER PREPARATION METHOD, RESIST COMPOSITION AND PATTERNING PROCESS - A polymer having a rate of dissolution in an alkaline developer that increases under the action of acid is provided. The polymer is prepared by reacting a hydrogenated ROMP polymer with an O-alkylating agent in the presence of a base. | 10-01-2009 |
Megumi Io, Chiba JP
| Patent application number | Description | Published |
|---|---|---|
| 20100286390 | PYRIDAZINONE COMPOUNDS AND P2X7 RECEPTOR INHIBITORS - Novel pyridazinone compounds of formula (I), which inhibit the purinergic P2X7 receptor and are useful for prevention, therapy and improvement of inflammatory and immunological diseases. | 11-11-2010 |