Inokuma, JP
Akinori Inokuma, Osaka JP
Akinori Inokuma, Osaka-Shi JP
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20130298630 | FORMING METHOD AND FORMING DEVICE - An object of the present invention is to provide a forming method and a forming machine in which in forming e.g., a round steel pipe, predetermined forming can be performed with less additional deformation imparted to a workpiece without deteriorating the productivity of the conventional roll forming, thereby manufacturing a high-quality product with high dimension precision. To achieve this object, the present invention provides a forming method and a forming machine, which adopt a rotating unit which rotatably moves on an endless track a die train having dies with outwardly directed and swingable forming passes in a breakdown step at an early forming stage, and in which the forming pass of each die holds the edge of the workpiece to rotatably move the die by changing the die to a predetermined angle, thereby realizing bending, so that problems due to twisting onto forming rolls and high locally-caused contact stress can be greatly reduced. | 11-14-2013 |
Hideki Inokuma, Yokkaichi Mie JP
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20150364479 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a plurality of element regions that are partitioned in a line-and-space shape and extend in a first direction in the substrate, a plurality of selection gates that are formed on the substrate to extend in a second direction intersecting the first direction. In addition, the semiconductor device includes a contact region that includes a plurality of contact plugs which are provided between two selection gates adjacent to each other and are connected to the respective element regions in the substrate. Further, the contact plug includes an upper portion and a lower portion. The upper portion has a first width and is formed of a first conductive film and a second conductive film. The lower portion has a second width smaller than the first width and is formed of the first conductive film. | 12-17-2015 |
Hideki Inokuma, Yokohama-Shi JP
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20080203429 | Semiconductor Device and a Method of Manufacturing the Same - In a semiconductor device with a shared contact, a gate electrode is formed via a gate insulating film on a semiconductor substrate and a sidewall insulating film is formed on both side faces of the gate electrode. At least one of the surface parts of the semiconductor substrate adjacent to both sides of the gate electrode is removed beyond the lower part of the sidewall insulating film and to the underside of the gate electrode. Then, the gate insulating film exposed in the remove part is removed. An impurity-doped semiconductor layer is formed in the part where the semiconductor substrate and the gate insulating film have been removed. | 08-28-2008 |
20090283834 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A MOS semiconductor device including MOSFETs each of which has a gate portion formed on a semiconductor substrate and source/drain regions includes sidewall insulating films formed on the side portions of the gate portions in the gate length direction, alloy layers formed on the source/drain regions, taper adjusting insulating films that are formed on the side portions of the sidewall insulating films and in which a taper angle made between a cross section thereof in the gate length direction and the substrate surface is set smaller than a taper angle made between the sidewall insulating film and the substrate surface, a stress-causing insulating film that applies strains to channels and is formed to cover the gate portions, sidewall insulating films and taper adjusting insulating films, and an interlayer insulating film formed on the stress-causing insulating film. | 11-19-2009 |
20100207209 | SEMICONDUCTOR DEVICE AND PRODUCING METHOD THEREOF - A semiconductor device having a small parasitic resistance and a high driving current is provided. The semiconductor device includes a fin portion that includes a pair of source/drain regions located on both end sides and a channel region sandwiched between the pair of source/drain regions; films that are formed on both sides in a channel-width direction of the fin portion; a gate electrode that is provided so as to stride across the channel region of the fin portion; a gate insulating film that is interposed between the gate electrode and the channel region; and a stress applying layer that applies a stress to the channel region of the fin portion, an upper surface and side surfaces of the source/drain region being coated with the stress applying layer in the fin portion, a lower end surface of the stress applying layer being in contact with the film with no gap. | 08-19-2010 |
20110180882 | Semiconductor Device and Method of Fabricating the Same - According to an aspect of the invention, there is provided a semiconductor device including a first semiconductor element formed on a semiconductor substrate and using electrons as carriers, and a second semiconductor element formed on the semiconductor substrate and using holes as carriers, a first insulating film and a second insulating film formed on source/drain regions and gate electrodes of the first element and the second element, the first insulating film having tensile stress with respect to the first element, and the second insulating film having compression stress with respect to the second element, and sidewall spacers of the gate electrodes of the first element and the second element, at least portions of the sidewall spacers being removed, wherein at least one of the first insulating film and the second insulating film does not close a spacing between the gate electrodes of the first element and the second element. | 07-28-2011 |
Hideki Inokuma, Kanagawa-Ken JP
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20130228736 | MEMORY DEVICE - According to one embodiment, a memory device includes a first electrode, a second electrode, and a variable resistance film. The variable resistance film is connected between the first electrode and the second electrode. The first electrode includes a metal contained in a matrix made of a conductive material. A cohesive energy of the metal is lower than a cohesive energy of the conductive material. A concentration of the metal at a central portion of the first electrode in a width direction thereof is higher than concentrations of the metal in two end portions of the first electrode in the width direction. | 09-05-2013 |
20130248796 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device includes a first wiring layer. The device includes a second wiring layer intersecting with the first wiring layer. And the device includes a first memory layer provided at a position where the first wiring layer and the second wiring layer intersect. And the first memory layer contacts with the first wiring layer, and the first wiring layer is a layer which is capable of supplying a metal ion to the first memory layer. | 09-26-2013 |
Hideki Inokuma, Kanagawa JP
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20140042383 | MANUFACTURING METHOD OF NON-VOLATILE STORAGE DEVICE, AND NON-VOLATILE STORAGE DEVICE - A manufacturing method includes forming a laminated body on a substrate. A mask layer is formed on the laminated body, and then a portion of the mask layer is removed to form an opening. Then, using the mask layer as a template, a first portion of the laminated body is removed to expose a portion of the substrate beneath the laminated body. The substrate is processed to alter the ratio between the size of mask opening and the removed first portion. A variable resistance layer is then deposited on exposed portions of the mask layer, the laminated body, and the substrate. Then the variable resistance layer is processed to remove at least a portion covering the substrate to permit contact with the underlying substrate. A second electrode layer is deposited to fill the removed portions of the laminated body. | 02-13-2014 |
Hideki Inokuma, Mie JP
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20150069485 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes memory cell units, each including memory cell transistors, a first transistor at a first end of the memory cell transistors, and a second transistor at a second end of the memory cell transistors. The memory cell units are arranged so that adjacent memory cell units have first transistors thereof facing each other or second transistors thereof facing each other, and so that a distance between the first transistors of the adjacent memory cell units is larger than a distance between the second transistors of the adjacent memory cell units. The semiconductor device further includes a first silicon nitride layer covering a first diffusion layer of the first transistors, a second silicon nitride layer covering a second diffusion layer of the second transistors. A thickness of the second silicon nitride layer is smaller than a thickness of the first silicon nitride layer. | 03-12-2015 |
Hisao Inokuma, Chiyoda-Ku JP
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20090147365 | COATING SOLUTION FOR FORMING LIGHT DIFFUSION LAYER, AND LIGHT DIFFUSION PLATE - A light diffusion plate in which the adhesiveness, particularly long term adhesiveness, between a glass substrate and a light diffusion layer is good; a coating solution for forming light diffusion layer to be employed for producing this light diffusion plate; and a transmission screen, a rear projection type projection TV and a backlight unit for liquid crystal display employing this light diffusion plate; are provided. | 06-11-2009 |
20100014314 | LIGHT DIFFUSION PLATE, COMPOSITION LIQUID FOR FORMING A LIGHT DIFFUSION LAYER AND PROCESS FOR PRODUCING LIGHT DIFFUSION PLATE - A conventional light diffusion plate provided in a direct type backlight unit to be employed for e.g. a liquid crystal display, has problems in that it does not have a sufficient diffusion performance, it is difficult to increase the size, and it is difficult to produce such a light diffusion plate at low cost. | 01-21-2010 |
Hisao Inokuma, Tokyo JP
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20130264555 | ORGANIC EL ELEMENT AND TRANSLUCENT SUBSTRATE - A translucent substrate may include a transparent support substrate, and a light extracting layer formed on the transparent support substrate, including a glass material having a first refractive index in a range of 1.6 to 2.2 for D line, and a scattering material having a second refractive index different from the first refractive index for the D line. The light extracting layer may have a surface formed with a plurality of projections including at least one of an approximately pyramid-shaped projection having one peak point and an approximately triangular prism-shaped projection having one peak edge. An inclination angle formed by an edge and a base edge of an approximate triangle, obtained in a vertical cross section passing through the peak point or the peak edge of the projection, may be in a range of 10° to 60°. | 10-10-2013 |
Kazuyuki Inokuma, Kyoto JP
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20090128626 | VEHICLE-MOUNTED IMAGING DEVICE - Color signals that have passed through a multilayer film filter and been photoelectrically converted are inputted into an image processing LSI. A color signal processing section of the image processing LSI corrects the color signals on a color matrix. The color matrix is divided into a plurality of regions corresponding to the color signals, and the correction is made for each of the regions. | 05-21-2009 |
20100316123 | MOVING IMAGE CODING DEVICE, IMAGING DEVICE AND MOVING IMAGE CODING METHOD - A moving image coding device for performing inter-frame prediction coding can prevent memory traffic for reference images from increasing due to increase of an image size. The moving image coding device comprises a multiple frame parallel processing inter-frame prediction coding unit | 12-16-2010 |
20110234864 | IMAGING DEVICE - A color filter array having two color filter patterns of 2×2 pixels is employed. In one of the two color filter patterns, the transmittances of the R and B filters are lower than the transmittances of the G color filters. In the other color filter pattern, the transmittances of the G color filters are lower than the transmittances of the R and B color filters. As a result, when four adjacent pixels are binned in moving images, three or more different colors are generated, and when all pixels are separately read out in still images, the output of an imager is corrected, whereby outputs equivalent to those of the RGB Bayer filter can be generated. | 09-29-2011 |
Nobuhiro Inokuma, Tokyo JP
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20120045626 | LAMINATED NONWOVEN FABRIC - An object of the present invention is to provide a nonwoven fabric having high tensile strength and high tear strength. The laminate nonwoven fabric of the present invention is a laminated nonwoven fabric obtained by thermally press-contacting a thermoplastic continuous fiber layer as an outer layer with both surfaces of an interlayer, wherein the ratio (F1/F2) between the average oblateness (F1) of the thermoplastic continuous fiber present on the surface side and the average oblateness (F2) of the thermoplastic continuous fiber present on the inner side is 1.20 or more. | 02-23-2012 |
Yasuhide Inokuma, Tokyo JP
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20150219533 | GUEST-COMPOUND-ENVELOPING POLYMER-METAL-COMPLEX CRYSTAL, METHOD FOR PRODUCING SAME, METHOD FOR PREPARING CRYSTAL STRUCTURE ANALYSIS SAMPLE, AND METHOD FOR DETERMINING MOLECULAR STRUCTURE OF ORGANIC COMPOUND - The present invention is: a guest-compound-enveloping polymer-metal-complex crystal characterized by at least one selected from an aliphatic hydrocarbon, an alicyclic hydrocarbon, an ether, an ester, an aromatic hydrocarbon, a halogenated hydrocarbon, and a nitrile being enveloped as a guest compound (A) in the minute pores or the like of a polymer-metal complex that contains a metal ion as a central metal and a ligand having at least two ligating sites, has a 3D network structure formed by the ligand being ligated to the metal ion, and has the minute pores or the like regularly arranged three-dimensionally within the 3D network structure, the amount of the guest compound (A) present within the minute pores or the like being at least 60 mol % of all the guest compounds enveloped in the minute pores or the like; a method for producing the guest-compound-enveloping polymer-metal-complex crystal; a method for preparing a crystal structure analysis sample using the crystal; and a method for determining the molecular structure of an organic compound using the sample obtained by said method. | 08-06-2015 |
Yoshihiro Inokuma, Kirishima-Shi JP
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20130057635 | THERMAL HEAD AND THERMAL PRINTER INCLUDING THE SAME - A thermal head capable of dissipating heat accumulated in a heat accumulating layer efficiently and achieving clear printing, and a thermal printer including the thermal head are provided. A thermal head includes a substrate, a heat accumulating layer disposed on part of the substrate, a heat generating portion disposed on the heat accumulating layer, an electrode electrically connected to the heat generating portion, a protective layer that covers the heat generating portion and part of the electrode, and an insulating layer having thermal conductivity, the insulating layer covering part of a region of the electrode which region is not covered with the protective layer. The insulating layer covers part of the protective layer and extends over the heat accumulating layer. | 03-07-2013 |
20130257601 | PANEL DEVICE - A panel device | 10-03-2013 |