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Inazuki
Masahiro Inazuki, Naruto-Shi JP
| Patent application number | Description | Published |
|---|---|---|
| 20110184066 | Ketoprofen Lysine Salt-Containing Aqueous Patch - A ketoprofen-containing aqueous patch is provided in which not only operational efficiency in producing is improved, but also the aqueous patch has excellent storage stability and transdermal absorption of ketoprofen. The ketoprofen lysine salt-containing aqueous patch includes a backing layer and an adhesive (paste) layer laminated thereon. The aqueous patch includes as a main active ingredient a ketoprofen lysine salt completely dissolved in a paste including not glycerin but a polyethylene glycol having an average molecular weight of 1000 or less. In the ketoprofen lysine salt-containing aqueous patch, the polyethylene glycol having an average molecular weight of 1000 or less is one or more polyethylene glycols selected from the group consisting of Polyethylene glycol 200, Polyethylene glycol 400, Polyethylene glycol 600, and Polyethylene glycol 1000. | 07-28-2011 |
Yokio Inazuki, Niigata JP
| Patent application number | Description | Published |
|---|---|---|
| 20120100467 | SPUTTERING TARGET MATERIAL, SILICON-CONTAINING FILM FORMING METHOD, AND PHOTOMASK BLANK - Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film. | 04-26-2012 |
Yuichi Inazuki, Tokyo-To JP
| Patent application number | Description | Published |
|---|---|---|
| 20090311612 | PHOTOMASK - A photomask which improves the imaging performance that the photomask has and forming a good micro image on a wafer in photolithography with a half pitch of 60 nm or less. Provided is a photomask used for photolithography using an ArF excimer laser as an exposing source for immersion exposure by quadrupole-polarized illumination with a high-NA lens. The photomask includes a mask pattern of a light shielding film or semi-transparent film on a transparent substrate, and further, given that a thickness of the light shielding film or semi-transparent film is “t” nm, a refractive index is “n”, an extinction factor is “k”, and a bias of a space part of the mask pattern is “d” nm, when “t”, “d”, “n” and “k” are adjusted and the photomask is used for the photolithography, optical image contrast takes a value exceeding 0.580. | 12-17-2009 |
Yukio Inazuki, Niigata-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20100261100 | PHOTOMASK BLANK AND PHOTOMASK - A photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etching, a light-shielding film disposed on the etch stop film and including at least one layer composed of a transition metal/silicon material, and an antireflective film disposed on the light-shielding film. When the light-shielding film is dry etched to form a pattern, pattern size variation arising from pattern density dependency is reduced, so that a photomask is produced at a high accuracy. | 10-14-2010 |