| Patent application number | Description | Published |
|---|
| 20090311631 | NEAR-FIELD EXPOSURE APPARATUS AND NEAR-FIELD EXPOSURE METHOD - A near-field exposure apparatus includes a near-field exposure mask, a mechanism to place a substrate to be exposed, opposed to the near-field exposure mask, a mechanism to perform relative alignment of the near-field exposure mask and the substrate to be exposed, a mechanism to closely contact the near-field exposure mask and the substrate to be exposed, with each other, a mechanism to project exposure light to the near-field exposure mask, and a soft X-ray irradiating device to remove static electricity charged in at least one of the near-field exposure mask and the substrate to be exposed. The soft X-ray irradiating device is disposed at a side of the near-field exposure mask remote from the substrate to be exposed. | 12-17-2009 |
| 20100029027 | SURFACE EMITTING LASER MANUFACTURING METHOD, SURFACE EMITTING LASER ARRAY MANUFACTURING METHOD, SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY - Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure. | 02-04-2010 |
| 20100220377 | OPTICAL FILTER - An optical filter that transmits light of the visible light region includes a dielectric substrate; a dielectric layer that is formed on a surface of the dielectric substrate; and a first metal structure group in which a plurality of first metal structures are arranged two-dimensionally in an isolated state in the in-plane direction of the dielectric substrate, that is provided between the dielectric substrate and the dielectric layer, comprising: the first metal structures having first and second lengths in first and second directions orthogonal to each other, which lengths are equal to or less than a first wavelength in the visible light region; and a transmittance of the first wavelength being reduced or a reflectance being increased by surface plasmons induced on a surface of the first metal structures by resonance between light incident on the dielectric substrate or the dielectric layer and the first metal structures. | 09-02-2010 |
| 20110076058 | SURFACE EMITTING LASER MANUFACTURING METHOD, SURFACE EMITTING LASER ARRAY MANUFACTURING METHOD, SURFACE EMITTING LASER, SURFACE EMITTING LASER ARRAY, AND OPTICAL APPARATUS INCLUDING SURFACE EMITTING LASER ARRAY - Provided is a surface emitting laser manufacturing method, etc., which reduces process damage occurring to a surface relief structure, enabling stable provision of a single transverse mode characteristic. Provided is a method including a surface relief structure for controlling a reflectance in a light emitting portion of an upper mirror, the surface relief structure including a stepped structure, includes: forming a resist pattern including a pattern for forming a mesa structure and a pattern for forming a stepped structure, on or above the upper mirror, and performing first-phase etching for etching the surface layer of the upper mirror to determine the horizontal position of the stepped structure; forming a current confining structure after the performing first-phase etching; and performing second-phase etching for further etching the area that the first-phase etching has been performed, to determine the depth position of the stepped structure, after the forming a current confining structure. | 03-31-2011 |
