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Inanami
Hiroshi Inanami, Aichi-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20090326136 | PROPYLENE-BASED BLOCK COPOLYMER COMPOSITION AND EXTERIOR MEMBER FOR AUTOMOBILE - A polypropylene resin composition for molding material, which is excellent in an appearance of weld line and an appearance of tiger stripe and is used for automobile exterior parts and an automobile exterior part comprising the same, are provided. A propylene-based block copolymer composition, comprising 100 parts by weight of a propylene-based block copolymer having an MFR of 50 to 100 g/10 minutes and an Mw/Mn of 7 or less, wherein the propylene-based block copolymer comprises 75 to 95% by weight of a crystalline polypropylene portion and 5 to 25% by weight of an ethylene-propylene copolymer portion, where the ethylene content of the ethylene-propylene copolymer portion is 35 to 45% by weight and the ratio of the weight-average molecular weight of the ethylene-propylene copolymer portion to the weight-average molecular weight of the crystalline polypropylene portion is 3 to 5; 25 to 45 parts by weight of an ethylene-α-olefin copolymer elastomer having an MFR of 1 to 9 g/10 minutes; and 30 to 45 parts by weight of talc having an average particle diameter of 1.5 to 15 μm. | 12-31-2009 |
Hiroshi Inanami, Ann Arbor, MI US
| Patent application number | Description | Published |
|---|---|---|
| 20090253849 | POLYPROPYLENE RESIN COMPOSITION AND INJECTION MOLDED ITEM FOR AUTOMOBILE THEREFROM - Provided are a polypropylene resin composition that excels not only in fluidity but also in balance between rigidity and impact resistance, and that can, when being molded into an automotive injection molded article, provide an automotive injection molded article excelling in weld appearance and flow mark appearance, and an automotive injection molded article made thereof. There is provided a polypropylene resin composition comprising 50 to 65 wt % of propylene-ethylene block copolymer (A-1) containing crystalline propylene homopolymer segment and propylene-ethylene random copolymer segment of 4.0 to 5.5 dl/g in intrinsic viscosity; 1 to 10 wt % of ethylene-α-olefin copolymer rubber (B) of 0.05 to 1 g/10 min in melt flow rate; 8 to 18 wt % of ethylene-α-olefin copolymer rubber (C) of 2 to 20 g/10 min in melt flow rate; and 18 to 25 wt % of inorganic filler (D), the sum of the rubbers (B) and (C) being 17 to 25 wt %. Further, an automotive injection molded article of the composition is provided. | 10-08-2009 |
Ryoichi Inanami, Kanagawa JP
| Patent application number | Description | Published |
|---|---|---|
| 20090246891 | MARK FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A mark forming method includes forming a first mask layer on a semiconductor substrate; forming at least three first patterns having periodicity on the first mask layer; forming a second mask layer on the first mask layer having the first patterns formed thereon; and forming an opening in the second mask layer to cover at least two patterns on ends of the at least three first patterns, thereby forming a mark composed of exposed ones of the first patterns. | 10-01-2009 |
| 20090305165 | WAFER EXPOSING METHOD, EUV EXPOSING APPARATUS, AND EB EXPOSING APPARATUS - A wafer exposing method comprising EUV-exposing a product area, which is formed as a product chip, on a wafer and EB-exposing a peripheral area on the wafer, wherein the EB exposure of a wafer different from the wafer being EUV-exposed is performed while the EUV exposure of the wafer is performed. | 12-10-2009 |
| 20100021826 | REFLECTIVE MASK, MANUFACTURING METHOD FOR REFLECTIVE MASK, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A reflective mask comprising: a reflective layer that is arranged on a surface on a side on which EUV light is irradiated and reflects the EUV light; a buffer layer containing Cr that is arranged on a side of the reflective layer on which the EUV light is irradiated and covers an entire surface of the reflective layer; and a non-reflective layer that is arranged on a side of the buffer layer on which the EUV light is irradiated and in which an absorber that absorbs the irradiated EUV light is arranged in a position corresponding to a mask pattern to be reduced and transferred onto a wafer. | 01-28-2010 |
| 20100075443 | TEMPLATE INSPECTION METHOD AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A template inspection method for performing defect inspection of a template, by bringing a pattern formation surface of a template used to form a pattern close to a first fluid coated on a flat substrate, filling the first fluid into a pattern of the template, and by performing optical observation of the template in a state that the first fluid is sandwiched between the template and the substrate, wherein a difference between an optical constant of the first fluid and an optical constant of the template is larger than a difference between an optical constant of air and the optical constant of the template. | 03-25-2010 |
| 20100252188 | TEMPLATE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A template formed of an optically-transparent material according to an embodiment includes a contact surface which contacts a resist material, a concave portion for resist pattern formed on the contact surface in which the resist material is filled and cured so as to form a resist pattern part, and a concave portion for alignment mark formed on the contact surface which is used for an optical alignment of the template, includes an opening and a bottom portion and has a shape that an area of the opening is larger than that of the bottom portion or a shape that a depth thereof is deeper than that of the concave portion for resist pattern. | 10-07-2010 |
Ryoichi Inanami, Kanagawa-Ken JP
| Patent application number | Description | Published |
|---|---|---|
| 20110159440 | CLEANING RETICLE, METHOD FOR CLEANING RETICLE STAGE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In one embodiment, a method for cleaning a reticle stage of an extreme ultraviolet exposure apparatus is disclosed. The method can include pressing a particle catching layer of a cleaning reticle onto the reticle stage, and the cleaning reticle includes the particle catching layer formed on a substrate. The method can include peeling the cleaning reticle from the reticle stage. The method can include removing the particle catching layer from the substrate. I addition, the method can include forming a new particle catching layer on the substrate having the particle catching layer removed. | 06-30-2011 |