Patent application number | Description | Published |
20090104104 | Apparatus for producing trichlorosilane and method for producing trichlorosilane - In the apparatus for producing trichlorosilane in which metal silicon powder supplied into the reactor is reacted with hydrogen chloride gas while being fluidized by the gas, thereby taking out trichlorosilane generated by the reaction from the upper part of the reactor, and a plurality of gas flow controlling members are installed at the internal space of the reactor along the vertical direction. | 04-23-2009 |
20090108100 | Hydrogen chrolide gas ejecting nozzle, reaction apparatus for producing trichlorosilane and method for producing trichlorosilane - There is provided a hydrogen chrolide gas ejecting nozzle I used in a reaction apparatus for producing trichlorosilane in which metal silicon powder is reacted with hydrogen chloride gas to generate trichlorosilane. The member is provided with a shaft portion extending in the longitudinal direction and a head portion that is provided on an end of the shaft portion and extends in a direction intersecting the longitudinal direction of the shaft portion. A supply hole extending in the longitudinal direction is formed in the shaft portion, a plurality of ejection holes are formed in the head portion, and each of the ejection holes is communicatively connected to the supply hole and opened on the outer surface of the head portion toward a direction intersecting the direction to which the supply hole extends. | 04-30-2009 |
20090123359 | Reaction apparatus for producing trichlorosilane and method for producing trichlorosilane - A reaction apparatus for producing trichlorosilane in which metal silicon powder M is reacted with hydrogen chloride gas, thus generating trichlorosilane, includes: an apparatus body into which the metal silicon powder is supplied; and an ejection port for ejecting the hydrogen chloride gas into the apparatus body from the bottom part of the apparatus body, wherein a plurality of holed pieces having a through hole penetrating in the thickness direction and a plurality of pellets interposed between these holed pieces are stacked in a mixed state on the upper side of the ejection port. | 05-14-2009 |
20090238748 | Chlorosilanes purifying apparatus and chlorosilanes manufacturing method - Aluminum chloride from a gas containing chlorosilanes produced in a chlorination reactor is effectively removed. A container | 09-24-2009 |
20100074823 | Apparatus for producing trichlorosilane and method for producing trichlorosilane - In the apparatus for producing trichlorosilane in which metal silicon powder supplied into the reactor is reacted with hydrogen chloride gas while being fluidized by the gas, thereby taking out trichlorosilane generated by the reaction from the upper part of the reactor, and a plurality of gas flow controlling members are installed at the internal space of the reactor along the vertical direction. | 03-25-2010 |
20120275982 | REACTION APPARATUS FOR PRODUCING TRICHLOROSILANE AND METHOD FOR PRODUCING TRICHLOROSILANE - A reaction apparatus for producing trichlorosilane in which metal silicon powder M is reacted with hydrogen chloride gas, thus generating trichlorosilane, includes: an apparatus body into which the metal silicon powder is supplied; and an ejection port for ejecting the hydrogen chloride gas into the apparatus body from the bottom part of the apparatus body, wherein a plurality of holed pieces having a through hole penetrating in the thickness direction and a plurality of pellets interposed between these holed pieces are stacked in a mixed state on the upper side of the ejection port. | 11-01-2012 |
20130272946 | HYDROGEN CHROLIDE GAS EJECTING NOZZLE, REACTION APPARATUS FOR PRODUCING TRICHLOROSILANE AND METHOD FOR PRODUCING TRICHLOROSILANE - There is provided a hydrogen chrolide gas ejecting nozzle 1 used in a reaction apparatus for producing trichlorosilane in which metal silicon powder is reacted with hydrogen chloride gas to generate trichlorosilane. The member is provided with a shaft portion extending in the longitudinal direction and a head portion that is provided on an end of the shaft portion and extends in a direction intersecting the longitudinal direction of the shaft portion. A supply hole extending in the longitudinal direction is formed in the shaft portion, a plurality of ejection holes are formed in the head portion, and each of the ejection holes is communicatively connected to the supply hole and opened on the outer surface of the head portion toward a direction intersecting the direction to which the supply hole extends. | 10-17-2013 |
Patent application number | Description | Published |
20090050951 | Semiconductor Device and Method of Manufacturing the Same - A method of manufacturing a semiconductor device according to an embodiment of the present invention includes depositing first to third mask layers above a substrate, processing the third mask layer, processing the second mask layer, slimming the second mask layer in an L/S section and out of the L/S section, peeling the third mask layer in the L/S section and out of the L/S section, forming spacers on sidewalls of the second mask layer in the L/S section and out of the L/S section, etching the second mask layer in the L/S section, under a condition that the second mask layer out of the L/S section Is covered with a resist, to remove the second mask layer in the L/S section while the second mask layer out of the L/S section remains, and processing the first mask layer by etching, using the spacers in the L/S section and out of the L/S section and the second mask layer out of the L/S section as a mask, the spacers in the L/S section and out of the L/S section and the second mask layer out of the L/S section being thinned by the etching. | 02-26-2009 |
20090096007 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device comprises a plurality of transistors having a stacked-gate structure. Each transistor includes a semiconductor substrate, a gate insulator formed on the semiconductor substrate, a lower gate formed on the semiconductor substrate with the gate insulator interposed, an intergate insulator formed on the lower gate, and an upper gate formed and silicided on the lower gate with the intergate insulator interposed. A portion of the transistors has an aperture formed through the intergate insulator to connect the lower gate with the upper gate and further includes a block film composed of an insulator and formed smaller than the upper gate and larger than the aperture above the upper gate to cover the aperture. | 04-16-2009 |
20110097888 | Semiconductor memory device and method of manufacturing the same - A semiconductor memory device comprises a plurality of transistors having a stacked-gate structure. Each transistor includes a semiconductor substrate, a gate insulator formed on the semiconductor substrate, a lower gate formed on the semiconductor substrate with the gate insulator interposed, an intergate insulator formed on the lower gate, and an upper gate formed and silicided on the lower gate with the intergate insulator interposed. A portion of the transistors has an aperture formed through the intergate insulator to connect the lower gate with the upper gate and further includes a block film composed of an insulator and formed smaller than the upper gate and larger than the aperture above the upper gate to cover the aperture. | 04-28-2011 |