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In-Sang Song, Seoul KR

In-Sang Song, Seoul KR

Patent application numberDescriptionPublished
20080309528Device for detecting voltage and analog-to-digital converter (ADC) using the same - A voltage detecting device and an analog-to-digital converter (ADC) using the same are provided. The voltage detecting device determines whether input voltage is higher than threshold voltage based on contact of a strip and a membrane. Therefore, high resolution and high speed operation is possible, but with consuming lower power, and an element capable of performing the function of resistor and comparator is provided. Furthermore, a more effective ADC may be provided using the above.12-18-2008
20090025043Multiband receiving apparatus and multiband transmitting apparatus using tunable filter - A multiband receiving apparatus and multiband transmitting apparatus using a tunable band is provided. The receiving apparatus includes a receiving unit for receiving radio frequency (RF) signals, and a tunable filter unit for selectively outputting the received RF signals. As a result, a complicated RF transceiving system is simplified, and time and cost for developing and designing a transceiving apparatus are reduced.01-22-2009
20090045985ANALOG TO DIGITAL CONVERTER USING ARRANGEMENT OF STATORS AND AD CONVERTING METHOD - An Analog to Digital (AD) converter and an AD converting method are provided. The AD converter includes one or more stators, and one or more actuators that move according to an input voltage. The digital output of the AD converter is determined based on an arrangement of the stators and the positions of the actuators relative to the stators. The AD converter can achieve high resolution and/or high speed with lower power consumption.02-19-2009
20090096651ANALOG-TO-DIGITAL (AD) CONVERTER USING RESONANCE FREQUENCY SHIFTING AND VOLTAGE DETECTING DEVICE THEREOF - An analog-to-digital (AD) converter and a voltage detecting device thereof are provided. The AD converter includes at least one voltage detecting device which outputs a signal of a frequency determined based on a magnitude of an input voltage using a resonance frequency of a resonator. The AD converter determines a digital output value depending on the output signal from the voltage detecting device. Therefore, the AD converter can achieve a high resolution and a high speed with far less power consumption.04-16-2009
20090096652ANALOG-TO-DIGITAL CONVERTER (ADC) USING TUNNELING EFFECT OF PROBES - An analog-to-digital converter (ADC) is provided to determine a digital output value according to whether electric current flows between a plurality of probes, to which an input voltage is applied, and a plurality of electrodes. Therefore, high resolution and high speed operation is possible, but with lower power consumption.04-16-2009
20090096655ANALOG TO DIGITAL CONVERTER WHICH USES TUNNELING MAGNETO-RESISTIVE DEVICES - An A/D converter is provided. The A/D converter determines a digital output value according to the resistance of the TMR device, resistance of which changes according to the magnetic field generated by at least one electrode into which current flows according to an analog input signal. Accordingly, an A/D converter to implement high resolution and high speed with low power consumption can be provided.04-16-2009
20090114513MICRO ELECTROMECHANICAL SYSTEM (MEMS) SWITCH - A Micro ElectroMechanical System (MEMS) switch is provided. The MEMS switch includes a ground, a moving unit moveable according to a driving signal, for connecting the input to the output or disconnecting the input from the output, and an electrode unit arranged in the configuration of a protrusion formed on a portion of the round, to induce a leakage signal generated between the input and the output to move toward the ground.05-07-2009
20090115553TUNABLE RESONATOR USING FILM BULK ACOUSTIC RESONATOR (FBAR) - A tunable resonator is provided. The tunable resonator includes a film bulk acoustic resonator (FBAR) for performing a resonance, and at least one driver which is arranged at a side of the FBAR and is deformed and brought into contact with the FBAR by an external signal, thereby changing a resonance frequency of the FBAR. Accordingly, a multiband integration and a one-chip manufacture can be implemented simply using a micro electro mechanical system (MEMS) technology and a mass production is possible.05-07-2009
20090115555TUNABLE RESONATOR AND TUNABLE FILTER - A tunable filter is provided which includes a filter unit comprising a pair of microstrips which are disposed facing each other, a capacitor unit connected to one side of the filter unit, and an adjustment unit for regulating the length of each of the pair of microstrips to adjust inductance of the filter unit, the adjustment unit being connected to the opposite side of the filter unit. The length of the microstrips may thereby be regulated in order to vary the frequency band.05-07-2009
20090142014AD CONVERTER USING PHOTONIC CRYSTAL - An AD converter is provided. The AD converter includes a light source unit which provides an optical signal, at least one waveguide unit which consists of a photonic crystal and transmits the optical signal, a modulation unit which applies a RF signal to the at least one waveguide unit, thereby modulating an optical signal output from the at least one waveguide unit, and a digital conversion unit which converts the modulated optical signal to a digital signal. Accordingly, a compact-sized AD convert can be realized.06-04-2009
20090184783RESONANT STRUCTURE COMPRISING WIRE, RESONANT TUNNELING TRANSISTOR, AND METHOD FOR FABRICATING THE RESONANT STRUCTURE - A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.07-23-2009
20090267706RESONATOR AND FABRICATION METHOD THEREOF - A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.10-29-2009
20100059346RF NANOSWITCH - An RF nanoswitch which can reduce a loss in RF signal. The RF nanoswitch includes a first electrode unit connected to one terminal of a driving power supply, a second electrode connected to the other terminal of the driving power supply, and a dielectric material selectively coming into contact with at least one of the first electrode unit and the second electrode, depending on whether or not power is applied from the driving power supply.03-11-2010
20100095497MONOLITHIC DUPLEXER - A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.04-22-2010
20100107387Bulk acoustic wave resonator, filter and duplexer and methods of making same - A resonator having a membrane formed of a piezoelectric layer sandwiched between first and second electrode is suspended above a cavity formed from the back surface of the support structure. In one embodiment, the cavity walls are substantially perpendicular to the back surface. In another embodiment, the first electrode is formed in the cavity such that it is electrically connected to an electrode on the back surface of the support structure. In yet another embodiment, the cavity is formed via an etch through via holes in the back surface of the support structure, which leads to greater flexibility in designing a method of manufacture while reducing the need for alignment relative to other designs.05-06-2010
20100132174METHOD OF MANUFACTURING FILM BULK ACOUSTIC RESONATOR USING INTERNAL STRESS OF METALLIC FILM AND RESONATOR MANUFACTURED THEREBY - A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.06-03-2010
20100155919High-density multifunctional PoP-type multi-chip package structure - Provided is a high-capacity multifunctional multichip package (MCP) structure in which a multifunctional MCP capable of, for example, high-speed image processing and communications, is mounted on a high-capacity memory package capable of storing various data, e.g., moving images, pictures, or music files. The high-capacity memory package may be efficiently applied to a mass storage of a mobile device. However, an eight-stage-plus chip stacking structure should overcome yield loss during assembly and test processes. To do this, a memory package may be divided into a pair of package to form upper and lower package stacks. To physically connect the pair of packages, molding members may be installed opposite each other and fixed to each other using an adhesive member. Also, to electrically connect the pair of packages, one of the packages may be formed using a flexible PCB substrate capable of bending. The flexible PCB substrate of the one of the packages may be connected to both sides of the other of the packages, and the two packages may be thermally bonded to each other under pressure using solder balls and ball lands.06-24-2010
20100197064SILICON-BASED RF SYSTEM AND METHOD OF MANUFACTURING THE SAME - A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.08-05-2010
20100237485STACK TYPE SEMICONDUCTOR PACKAGE APPARATUS - A semiconductor device includes a first semiconductor package having at least one first semiconductor chip and a first sealing member covering the at least one first semiconductor chip, a second semiconductor package stacked on the first semiconductor package, the second semiconductor package having at least one second semiconductor chip, leads electrically connected to the at least one second semiconductor chip, and a second sealing member covering the at least one second semiconductor chip, and at least one signal connection member disposed in the first sealing member of the first semiconductor package, the at least one signal connection member electrically connecting the at least one first semiconductor chip with the leads of the at least one second semiconductor chip.09-23-2010
20110079890SEMICONDUCTOR PACKAGE, SEMICONDUCTOR PACKAGE STRUCTURE INCLUDING THE SEMICONDUCTOR PACKAGE, AND MOBILE PHONE INCLUDING THE SEMICONDUCTOR PACKAGE STRUCTURE - Provided is a semiconductor package. The semiconductor package may include a first semiconductor package having first semiconductor chips sequentially stacked on a substrate. In example embodiments, the first semiconductor chips may have a cascaded arrangement in which first sides and second sides of the semiconductor chips define cascade patterns. The cascaded arrangement may extend in a first direction to define a space between the first sides of the first semiconductor chips and the substrate. The semiconductor package may also include at least one first connection wiring at the second sides of the semiconductor chips, the at least one first connection wiring being configured to electrically connect the substrate with the first semiconductor chips. In addition, the semiconductor package may further include a first filling auxiliary structure adjacent to the first sides of the first semiconductor chips.04-07-2011
20110095424SEMICONDUCTOR PACKAGE STRUCTURE - The semiconductor package structure includes first and second packages. The first package has at least one first semiconductor chip disposed on a first printed circuit board, and at least one first pad disposed on the at least one first semiconductor chip. The second package has at least one second pad disposed on the first package, and at least one second semiconductor chip disposed on the at least one second pad. The at least one first semiconductor chip is electrically connected to the first printed circuit board. The at least one second pad is electrically connected to the at least one second semiconductor chip. The at least one second pad faces the at least one first pad.04-28-2011
20110108400MEMS SWITCH - A Micro Electro Mechanical System (MEMS) switch includes a substrate, a fixed signal line formed on the substrate, a movable signal line spaced apart from one of an upper surface and a lower surface of the fixed signal line, and at least one piezoelectric actuator connected to a first end of the movable signal line so as to bring or separate the movable signal line in contact with or from the fixed signal line. The piezoelectric actuator includes a first electrode, a piezoelectric layer formed on the first electrode, a second electrode formed on the piezoelectric layer, and a connecting layer formed on the second electrode and connected with the movable signal line.05-12-2011

Patent applications by In-Sang Song, Seoul KR