| Patent application number | Description | Published |
|---|
| 20080315285 | Non-volatile memory devices and methods of fabricating the same - Non-volatile memory devices and methods of fabricating the same are provided. The non-volatile memory devices may include a semiconductor substrate having a pair of sidewall channel regions extending from the semiconductor substrate and opposite to each other, and a floating gate electrode between the pair of sidewall channel regions and protruding from the semiconductor substrate. A control gate electrode may be formed on the semiconductor substrate and a portion of the floating gate electrode. | 12-25-2008 |
| 20080316807 | Semiconductor memory device having metal-insulator transition film resistor - A semiconductor memory device may have a lower leakage current and/or higher reliability, e.g., a longer retention time and/or a shorter refresh time. The device may include a switching device and a capacitor. A source of the switching device may be connected to a first end of a metal-insulator transition film resistor, and at least one electrode of the capacitor may be connected to a second end of the metal-insulator transition film resistor. The metal-insulator transition film resistor may transition between an insulator and a conductor according to a voltage supplied to the first and second ends thereof. | 12-25-2008 |
| 20090045450 | Non-volatile memory device and method of fabricating the same - Provided are a non-volatile memory device, which may have higher integration density, improved or optimal structure, and/or reduce or minimize interference between adjacent cells without using an SOI substrate, and a method of fabricating the non-volatile memory device. The non-volatile memory device may include: a semiconductor substrate comprising a body, and a pair of fins protruding from the body; a buried insulating layer filling between the pair of fins; a pair of floating gate electrodes on outer surfaces of the pair of fins to a height greater than that of the pair of fins; and a control gate electrode on the pair of floating gate electrodes. | 02-19-2009 |
| 20090186444 | Transistor, method of manufacturing transistor, and method of operating transistor - A transistor in which a physical property of its channel is changed according to an applied voltage, and methods of manufacturing and operating the same are provided. The transistor may include a first conductive layer on a substrate, a phase change layer and a second conductive layer which are sequentially stacked on the first conductive layer, a first current direction limiting unit and a second current direction limiting unit formed on the second conductive layer by being separated within a space, a third conductive layer and a fourth conductive layer formed on the first current direction limiting unit and the second current direction limiting unit, respectively, a word line connected to the third conductive layer, a bit line connected to the fourth conductive layer, and a voltage lowering unit connected to the word line. | 07-23-2009 |
| 20110095287 | Nonvolatile memory device and nonvolatile memory array including the same - A nonvolatile memory device having self-presence diode characteristics, and/or a nonvolatile memory array including the nonvolatile memory device may be provided. The nonvolatile memory device may include a lower electrode, a first semiconductor oxide layer on the lower electrode, a second semiconductor oxide layer on the first semiconductor oxide layer, and/or an upper electrode on the second semiconductor oxide layer. | 04-28-2011 |
| Patent application number | Description | Published |
|---|
| 20090285082 | ELECTRIC FIELD READ/WRITE HEAD, METHOD OF MANUFACTURING THE ELECTRIC FIELD READ/WRITE HEAD, AND INFORMATION STORAGE DEVICE INCLUDING THE ELECTRIC FIELD READ/WRITE HEAD - An electric field head includes a body portion and a read head having a channel layer provided on an air bearing surface (ABS) of the body portion facing a recording medium and a source and a drain contacting both ends of the channel layer. The electric field head is manufactured by defining a head forming portion of a substrate, separating the head forming portion from the substrate, forming an ABS pattern on a side surface of the separated head forming portion, and forming a channel layer for a read head on a surface of the head forming portion where the ABS pattern is formed. An information storage device includes a ferroelectric recording medium and the electric field head. | 11-19-2009 |
| 20110001746 | Apparatuses for and methods of displaying three-dimensional images - An apparatus for displaying a three-dimensional (3D) image may include a plurality of display panels and a controller configured to apply image signals to each of the plurality of display panels. At least one of the display panels may include a transparent display panel. The plurality of display panels may be spaced apart from each other in a depth direction. A method of displaying a three-dimensional (3D) image may include displaying plane images on each of a plurality of display panels. At least one of the plurality of display panels may include a transparent display panel. The plurality of display panels may be spaced apart from each other in a depth direction. | 01-06-2011 |
| 20110059576 | Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same - A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, one or more data storage layers, and an upper electrode. At least one of the one or more metal oxide layers is electrically connected to the lower electrode. At least one of the one or more data storage layers is electrically connected to at least one of the one or more metal oxide layers. The upper electrode is electrically connected to at least one of the one or more data storage layers. A method of manufacturing the nonvolatile memory device includes preparing the at least one switching device and forming the lower electrode, one or more metal oxide layers, one or more data storage layers, and upper electrode. | 03-10-2011 |
| 20110068409 | RESISTIVE MEMORY DEVICES INCLUDING VERTICAL TRANSISTOR ARRAYS AND RELATED FABRICATION METHODS - A resistive memory device includes a vertical transistor and a variable resistance layer. The vertical transistor includes a gate electrode on a surface of a substrate, a gate insulation layer extending along a sidewall of the gate electrode, and a single crystalline silicon layer on the surface of the substrate adjacent to the gate insulation layer. At least a portion of the single crystalline silicon layer defines a channel region that extends in a direction substantially perpendicular to the surface of the substrate. The variable resistance layer is provided on the single crystalline silicon layer. The variable resistance layer is electrically insulated from the gate electrode. Related devices and fabrication methods are also discussed. | 03-24-2011 |
| 20110085368 | Non-volatile memory device and method of manufacturing the same - The non-volatile memory device may include a substrate, a plurality of first signal lines on the substrate in a vertical direction, a plurality of memory cells having ends connected to the plurality of first signal lines, a plurality of second signal lines perpendicular to the plurality of first signal lines on the substrate and each connected to other ends of the plurality of memory cells, and a plurality of selection elements on the substrate and connected to at least two of the plurality of first signal lines. | 04-14-2011 |
| 20110128772 | Nonvolatile memory cells and nonvolatile memory devices including the same - A nonvolatile memory cell may include a bidirectional switch having a first threshold voltage when a forward current is applied to the bidirectional switch and a second threshold voltage when a reverse current is applied to the bidirectional switch; and a variable resistor connected to the bidirectional switch in series. A state of resistance of the variable resistor may be controlled according to voltage applied to the variable resistor. A sum of a magnitude of the first threshold voltage and a magnitude of the second threshold voltage may be greater than a write voltage that is used to perform a write operation on the variable resistor. | 06-02-2011 |
